C. Wei

An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating

C. Wei, Y. Tkachenko, D. Bartle, 1998 .

Elevated temperature microwave characteristics of heterojunction bipolar transistors

C. Wei, J.C.M. Hwang, D. Whitefield, 1993, 15th Annual GaAs IC Symposium.

Symmetrical Mott barrier as a fast photodetector

C. Wei, H. Beneking, H. Klein, 1981 .

New method for direct extraction of HBT equivalent circuit parameters

C. J. Wei, James C. M. Hwang, C. Wei, 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

Junction barrier effects on the microwave power performance of double heterojunction bipolar transistors

C. Wei, J.C.M. Hwang, W. Hong, 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Table-based dynamic FET model assembled from small-signal models

Dylan Bartle, Y. Tkachenko, C. Wei, 1999 .

Comparative study of hot-electron reliability of PHEMT vs. MESFET for high efficiency power amplifiers

A. Klimashov, D. Bartle, Y. Tkachenko, 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

Transition-Analyzer-Based Harmonic and Waveform Load-Pull Measurements

C. J. Wei, J. C. M. Hwang, M.S. Shirokov, 1997, 49th ARFTG Conference Digest.