C. Hobbs

发表

Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI

P. Kirsch, K. Akarvardar, P. Majhi, 2010, 2010 International Electron Devices Meeting.

300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique

G. Bersuker, S. Gausepohl, P. Kirsch, 2011, 2011 International Electron Devices Meeting.

A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

X. Chen, M. Khare, D. Tekleab, 2008, 2008 Symposium on VLSI Technology.

Fully-depleted SOI CMOS technology using WXN metal gate and HfSixOyNZ high-k dielectric

O. Faynot, M. Orlowski, T. Skotnicki, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

More Moore or More than Moore

P. Kirsch, W. Loh, C. Kang, 2012 .

Understanding the FinFET Mobility by Systematic Experiments

K. Akarvardar, C. Young, M. Baykan, 2013 .

SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION

M. Shur, G. Bersuker, D. Veksler, 2011 .

Sub-quarter micron Si-gate CMOS with ZrO/sub 2/ gate dielectric

D. Gilmer, T. Ma, S. Samavedam, 2001, 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517).

Compatibility of Silicon gates with hafnium-based gate dielectrics

Raghaw Rai, Rama I. Hegde, L. Prabhu, 2003 .

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

Raghaw Rai, Rama I. Hegde, L. Prabhu, 2002 .

High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications

P. Kirsch, Daehyun Kim, J. D. del Alamo, 2013, IEEE Electron Device Letters.

High-Speed E-Mode InAs QW MOSFETs With Al 2 O 3 Insulator for Future RF Applications

P. Kirsch, Daehyun Kim, J. Alamo, 2013 .

Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs

En Xia Zhang, S Cristoloveanu, Weize Xiong, 2010, IEEE Transactions on Nuclear Science.

Positive bias instability in gate-first and gate-last InGaAs channel n-MOSFETs

A. S. Oates, G. Bersuker, P. D. Kirsch, 2014, 2014 IEEE International Reliability Physics Symposium.

Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs

G. Bersuker, P. D. Kirsch, K. Matthews, 2013, IEEE Transactions on Device and Materials Reliability.

InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax

D. Veksler, P. Kirsch, J. D. del Alamo, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

Chris Hobbs, Kausik Majumdar, P. Kirsch, 2014, IEEE Electron Device Letters.

High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

Peide D. Ye, P. Y. Hung, Wilman Tsai, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION

Michael S. Shur, Raj Jammy, G. Bersuker, 2013 .

Chloride molecular doping technique on 2D materials: WS2 and MoS2.

Wilman Tsai, Chris Hobbs, Kausik Majumdar, 2014, Nano letters.

Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs

S. Gausepohl, P. Kirsch, K. Akarvardar, 2012, IEEE Electron Device Letters.

Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node

R. Jammy, P. D. Kirsch, P. Majhi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Performance and variability in multi-VT FinFETs using fin doping

P. Y. Hung, T. Ngai, R. Jammy, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

S. Gausepohl, P. Kirsch, K. Akarvardar, 2012, IEEE Electron Device Letters.

Electrical characterization of ultra-thin oxides and high K gate dielectrics

C. Hobbs, R. Mazur, W. Howland, 2001 .

Theoretical study of phosphorene tunneling field effect transistors

C. Hobbs, Jiwon Chang, 2015, 1502.04223.

Ultraviolet light enhancement of Ta2O5 dry etch rates

S. Pearton, C. Hobbs, K. Lee, 2000 .

S. Datta, R. Jammy, C. Hobbs, 2012 .

Development of transmon qubits solely from optical lithography on 300 mm wafers

E. Holland, S. Novak, P. Kearney, 2019, Quantum Science and Technology.

Integration Challenges of Inorganic Low-K (K≤2.5) Materials with Cu for Sub-0.25µm Multilevel Interconnects

J. Wetzel, J. K. Watanabe, C. Hobbs, 1999 .

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Lee A. Walsh, Wei-Yip Loh, Rinus T. P. Lee, 2014 .

VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module

S. Deora, K. Matthews, P. Kirsch, 2013, 2013 IEEE International Electron Devices Meeting.

Process damages in HfO/sub 2//TiN stacks: the key role of H/sup 0/ and H/sub 2/ anneals

C. Leroux, X. Garros, G. Reimbold, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates

D. Gilmer, S. Samavedam, A. Demkov, 2003 .

Raman spectra of disordered Hg(NH3)2Cl2 and Hg(NH3)2Br2

C. Hobbs, Y. Ebisuzaki, P. D. Richard, 1982 .

Degradation of silicon dioxide during selective silicon epitaxy in a dichlorosilane environment

J. Wortman, C. Hobbs, M. C. Öztürk, 1996 .

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO2

B. E. White, M. Ramon, G. Tam, 2004 .

Chemical Vapor Deposition of Titania/Silica and Zirconia Films

Jeffrey T. Roberts, S. Campbell, C. Hobbs, 2001 .

New insights into SILC-based life time extraction

L. Larcher, T. Ngai, G. Bersuker, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

W. Epling, I. Baumvol, C. Hobbs, 1999 .

Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous TixSi1-xO2 films

Jeffrey T. Roberts, S. Campbell, C. Hobbs, 2000 .

Metal gate MOSFETs with HfO/sub 2/ gate dielectric

P. Abramowitz, P.J. Tobin, E. Luckowski, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Dual-metal gate CMOS with HfO2 gate dielectric

P. Abramowitz, J. Conner, E. Luckowski, 2002, Digest. International Electron Devices Meeting,.

Atomic Vapour Deposition (AVD™) Process for High Performance HfO 2 2 Dielectric Layers

X. Garros, M. Cassé, J. Mitard, 2004 .

Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure

J. Woicik, K. Matthews, P. Kirsch, 2014, Symposium on VLSI Technology.

Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement

R. Jammy, P. D. Kirsch, K. Matthews, 2012, 2012 International Electron Devices Meeting.

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

Chang Yong Kang, Martin Rodgers, Chris Hobbs, 2013, IEEE Electron Device Letters.

Thermal effects on 1H and 2H distributions determined by SIMS in atomic layer deposition of HfO2 and Al2O3 using heavy water

G. Reimbold, C. Hobbs, P. Rivallin, 2006 .

Parasitic resistance reduction technology

K. Akarvardar, W. Loh, R. Jammy, 2011, 11th International Workshop on Junction Technology (IWJT).

FinFET parasitic resistance reduction by segregating shallow Sb, Ge and As implants at the silicide interface

K. Matthews, S. Gausepohl, P. Kirsch, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

M. L. Lovejoy, W.J. Taylor, J.M. Grant, 2004, IEEE Transactions on Electron Devices.

Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

S. Campbell, D. Buchanan, M. Gribelyuk, 2001 .

High Density Plasma Etching of Ta 2 O 5 -Selectivity to Si and Effect of UV Light Enhancement

S. Pearton, C. Hobbs, R. Singh, 1999 .

Advanced techniques for achieving ultra-shallow junctions in future CMOS devices

W. Loh, P. Majhi, R. Jammy, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation

K. Matthews, K. Akarvardar, P. Majhi, 2012 .

Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A.

P. Griffin, S. Campbell, C. Hobbs, 2002 .

S. Datta, B. Rajamohanan, P. Majhi, 2012, IEEE Electron Device Letters.

Mapping Defect Density in MBE Grown ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

Matthew J. Filmer, K. Matthews, P. Kirsch, 2014, IEEE Transactions on Electron Devices.

MOCVD of High-K Dielectrics and Conductive Metal Nitride Thin Films

C. Hobbs, Y. Senzaki, K. Reid, 1999 .

Performance and reliability investigation of (110) and (100) sidewall oriented MugFETs

G. Bersuker, P. Kirsch, K. Akarvardar, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Fermi-level pinning at the polysilicon/metal oxide interface-Part I

M. L. Lovejoy, W.J. Taylor, J.M. Grant, 2004, IEEE Transactions on Electron Devices.

Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

D. Gilmer, S. Samavedam, A. Demkov, 2003, IEEE International Electron Devices Meeting 2003.

Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

Y. T. Chen, G. Bersuker, D. Veksler, 2012 .

Multi-technique study of defect generation in high-k gate stacks

G. Bersuker, D. Veksler, K. Matthews, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Towards Synaptic Behavior of Nanoscale ReRAM Devices for Neuromorphic Computing Applications

Karsten Beckmann, Wilkie Olin-Ammentorp, Martin Rodgers, 2020, ACM J. Emerg. Technol. Comput. Syst..

Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films

D. Gilmer, C. Hobbs, R. Hegde, 2002 .

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

P. D. Kirsch, K. Matthews, D.-H Kim, 2013, 2013 IEEE International Electron Devices Meeting.

Interface states in HfO/sub 2/ stacks with metal gate: nature, passivation, generation [MOS devices]

X. Garros, G. Reimbold, C. Leroux, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

L $_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

Daehyun Kim, W. Maszara, C. Hobbs, 2015, IEEE Electron Device Letters.