M. Fukuda

High performance Si.45Ge.55 Implant Free Quantum Well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation

A. Hikavyy, H. Bender, N. Horiguchi, 2011, 2011 International Electron Devices Meeting.

Dual-channel technology with cap-free single metal gate for high performance CMOS in gate-first and gate-last integration

A. Hikavyy, G. Mannaert, T. Schram, 2011, 2011 International Electron Devices Meeting.

Degradation behavior of 0.98-/spl mu/m strained quantum well InGaAs/AlGaAs lasers under high-power operation

J. Temmyo, M. Fukuda, M. Okayasu, 1994 .

Facet oxidation of InGaAsP/InP and InGaAs/InP lasers

M. Fukuda, 1983 .