Shih-Ting Hung

A 25-nm gate-length FinFET transistor module for 32nm node

J. Liaw, Y. Chiu, C. Wann, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

Min Cao, Feng Yuan, Tsung-Lin Lee, 2010, 2010 International Electron Devices Meeting.

Hybrid Fan-out Package for Vertical Heterogeneous Integration

S. Jeng, D. Wong, Shih-Ting Hung, 2020, 2020 IEEE 70th Electronic Components and Technology Conference (ECTC).