Shyue-Shyh Lin

发表

A 25-nm gate-length FinFET transistor module for 32nm node

J. Liaw, Y. Chiu, C. Wann, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

Min Cao, Feng Yuan, Tsung-Lin Lee, 2010, 2010 International Electron Devices Meeting.

Performance and off-state current mechanisms of low-temperature processed polysilicon thin-film transistors with liquid phase deposited SiO/sub 2/ gate insulator

Shyue-Shyh Lin, Yu-Chi Yang, C. Yeh, 1994 .

A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications

Min Cao, Sreedhar Natarajan, Hank Cheng, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

An optimized integration scheme for 0.13 /spl mu/m technology node dual-damascene Cu interconnect

B. Tsui, Shyue-Shyh Lin, Chen-Nan Yeh, 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

Global pattern density effects on low-k trench CDs for sub-65-nm technology nodes

Mong-Song Liang, K.Y.-Y. Doong, L. J. Hung, 2006, SPIE Advanced Lithography.

Thinner liquid phase deposited oxide for polysilicon thin-film transistors

Shyue-Shyh Lin, Ching-Lin Fan, C. Yeh, 1995 .

Process sensitivity and robustness analysis of via-first dual-damascene process

B. Tsui, Shyue-Shyh Lin, Chih-Wei Chen, 2003 .

Effects of plasma treatment on the properties of room-temperature liquid-phase deposited (LPD) oxide films

Shyue-Shyh Lin, C. Yeh, 1995 .

Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain

J. Hsieh, Y. Sheu, Y. Fang, 2009 .

Plasma charging damage during contact hole etch in high-density plasma etcher

B. Tsui, Shyue-Shyh Lin, C. Hsia, 2000 .

Low-temperature processed MOSFETs with liquid phase deposited SiO/sub 2-x/F x as gate insulator

Shyue-Shyh Lin, C. Yeh, Tzy-Yan Hong, 1995 .