G. Winderickx

发表

Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI

A. Stesmans, R. Loo, M. Caymax, 2006, 2009 Symposium on VLSI Technology.

Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

R. Loo, M. Caymax, T. Vandeweyer, 2008, 2008 IEEE International Electron Devices Meeting.

High performance Ge pMOS devices using a Si-compatible process flow

K. Opsomer, L. Ragnarsson, B. Kaczer, 2006, 2006 International Electron Devices Meeting.

Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Naoto Horiguchi, Geert Hellings, Niamh Waldron, 2012 .

Investigation of PECVD dielectrics for nondispersive metal-insulator-metal capacitors

S. Decoutere, S. Jenei, S. Van Huylenbroeck, 2002, IEEE Electron Device Letters.

Integration of III-V on Si for High-Mobility CMOS

N. Horiguchi, A. Thean, C. Merckling, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Geert Hellings, Jerome Mitard, Marc Heyns, 2008 .

Germanium Deep-Submicron p -FET and n -FET Devices, Fabricated on Germanium-On-Insulator Substrates

K. Opsomer, B. Kaczer, A. Satta, 2007 .

Monolithic integration of photonic stack onto CMOS imager for absorption spectroscopy

P. Peumans, V. García-Muñoz, P. Van Dorpe, 2018, 2018 IEEE Micro Electro Mechanical Systems (MEMS).

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

Marc Heyns, Marc Meuris, G. Raskin, 2005 .

Ge deep sub-micron HiK/MG pFETs with superior drive compared to Si HiK/MG state-of-the-art reference

B. Kaczer, M. Heyns, M. Meuris, 2006, 2006 International SiGe Technology and Device Meeting.