T. Yasuda

发表

Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 International Electron Devices Meeting.

Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

N. Taoka, M. Takenaka, S. Takagi, 2012 .

Self-aligned metal source/drain InxGa1−xAs n-MOSFETs using Ni-InGaAs alloy

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal?Oxide?Semiconductor Field-Effect Transistors Using Ni?InGaAs Alloy

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2011 .

Atomic structure of the GaAs(001)-(24) surface under As flux

T. Yasuda, T. Hanada, A. Ohtake, 2002 .

Anisotropic kinetics on growing Ge(0 0 1) surfaces

T. Yasuda, N. Miyata, A. Ohtake, 2009 .

Effect of precursor concentration in atomic layer deposition of Al2O3

R. Kuse, A. Toriumi, T. Yasuda, 2003 .

Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

N. Taoka, M. Takenaka, S. Takagi, 2013, IEEE transactions on device and materials reliability.

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

G. Lucovsky, S. Hattangady, T. Yasuda, 1994 .

Integration of wet-chemical processing with low-temperature plasma-assisted processes for the formation of device-quality Si/SiO 2 interfaces on Si(111) surfaces

H. Kurz, G. Lucovsky, T. Yasuda, 1994 .

A Low-Temperature Process for Device Quality Si/SiO 2 Interfaces on Si(111)

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi, 2009 .

Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013, IEEE Transactions on Electron Devices.

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

N. Taoka, M. Takenaka, S. Takagi, 2012 .

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2012 .

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

N. Taoka, M. Takenaka, S. Takagi, 2012, Materials.

Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

S. Takagi, M. Takenaka, T. Hoshii, 2011, 2011 International Electron Devices Meeting.

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High‐k Dielectrics

Y. Xuan, T. Yasuda, D. Hojo, 2006 .

Interface, surface and bulk anisotropies of heterostructures

T. Yasuda, 1998 .

Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)

S. Yamasaki, T. Yasuda, S. Gwo, 2001 .

Electron paramagnetic resonance of a single-crystal surface: the Si(111)-7×7 surface and its oxidation process

T. Umeda, S. Yamasaki, T. Yasuda, 2001 .

Nitrogen doping and carrier compensation in p-ZnSe

Yihong Wu, T. Yasuda, T. Yao, 1996 .

Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio

T. Yasuda, Kazunobu Tanaka, T. Yao, 1997 .

Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source

T. Yasuda, Kazunobu Tanaka, T. Yao, 1997 .

Atomic nitrogen doping in p-ZnSe with high activation ratio using a high-power plasma source

T. Yasuda, Kazunobu Tanaka, T. Yao, 1998 .

Formation of Si/SiO2 Heterostructures by Low-Temperature, Plasma-Assisted Oxidation and Deposition Processes

G. Lucovsky, T. Yasuda, Y. Ma, 1993 .

The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO2 Interface

G. Lucovsky, T. Yasuda, Y. Ma, 1993 .

Dipole formation at direct-contact HfO2∕Si interface

Y. Shiraki, T. Yasuda, N. Miyata, 2007 .

Comparison of Au contacts to Si, GaAs, InxGa1 − xP, and ZnSe measured by ballistic electron emission microscopy

R. Williams, K. Kavanagh, C. Tu, 1996 .

Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second‐harmonic generation at these interfaces

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

Effects of nitrogen incorporation HfAlOx films on gate leakage current from XPS study of Hf bonding states

T. Nabatame, A. Toriumi, W. Mizubayashi, 2003, Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).

Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers

H. Kurz, G. Lucovsky, T. Yasuda, 1992 .

Si(100) Surface Preparation by In-Situ or in-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO 2 and Epitaxial Growth of Si

G. Lucovsky, R. Nemanich, T. Yasuda, 1990 .

Formation of Si–SiO2 stacked‐gate structures by plasma‐assisted and rapid‐thermal processing: Improved device performance through process integration

J. Wortman, V. Misra, G. Lucovsky, 1994 .

Effects of Chemical Composition and Morphology of Substrate Surfaces on Crystallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films

S. Yamasaki, T. Yasuda, Kazunobu Tanaka, 2000 .

Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method

N. Kumagai, K. Yamabe, S. Yamasaki, 2003 .

Oxidation Mechanism of Silicon Surface. In situ Counting of the Number of Oxidized Si Layers by the Reflectance-Difference Oscillation Technique.

T. Yasuda, 2002 .

Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

In situ electron spin resonance of initial oxidation processes of Si surfaces

T. Umeda, S. Yamasaki, T. Yasuda, 2000 .

Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR

S. Yamasaki, T. Yasuda, U. Das, 2002 .

In vacuo electron-spin-resonance study on amorphous fluorinated carbon films for understanding of surface chemical reactions in plasma etching

S. Yamasaki, M. Sekine, T. Yasuda, 2002 .

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

N. Taoka, M. Takenaka, S. Takagi, 2012 .

Self-limiting growth of ultrathin Ga2O3 for the passivation of Al2O3/InGaAs interfaces

T. Irisawa, T. Yasuda, T. Tezuka, 2013 .

AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

M. Takenaka, S. Takagi, T. Yasuda, 2011 .

Vacuum-ultraviolet reflectance difference spectroscopy for characterizing dielectrics-semiconductor interfaces

T. Yasuda, T. Horikawa, Masatoshi Tanaka, 2011 .

SiO2/Si interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures

T. Yasuda, T. Horikawa, Masatoshi Tanaka, 2011 .

Surface Cleaning Prior to Formation of Si/SiO 2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

G. Lucovsky, T. Yasuda, H. Lamb, 1992 .

Low-Temperature Device-Quality SiO 2 /Si (100) Interfaces Prepared By A Combined Remote Plasma Oxidation-Deposition Process

G. Lucovsky, T. Yasuda, Y. Ma, 1991 .

Determination of carrier concentration in n-ZnSe by reflectance difference spectroscopy: Experimental results and model calculation

N. Kumagai, T. Yasuda, T. Hanada, 2002 .

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

T. Gotow, T. Yasuda, H. Fujishiro, 2017 .

Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing

M. Takenaka, S. Takagi, Sung-Hoon Lee, 2012 .

Electron Cycloytron Resonance Plasma Etching/Cleaning For Si Device Fabrication

G. Lucovsky, T. Yasuda, H. Lamb, 1993 .

Resistless pattern definition and Si selective-area deposition using an ultrathin SiO2 mask layer treated by SiHCl3

S. Yamasaki, T. Yasuda, M. Nishizawa, 2000 .

Nanoscale selective-area epitaxial growth of Si using an ultrathin SiO2/Si3Ni4 mask patterned by an atomic force microscope

S. Yamasaki, T. Yasuda, S. Gwo, 2000 .

Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors

Y. Xuan, T. Yasuda, 2003, Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).

Measurements of the linear electro-optic coefficients of ZnTe by RDS

N. Kumagai, T. Yasuda, T. Hanada, 2002 .

An organic functional group introduced to Si(1 1 1) via siliconcarbon bond: a liquid-phase approach

T. Yasuda, Kazunobu Tanaka, T. Okubo, 2001 .

Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes

H. Iwai, T. Yasuda, P. Ahmet, 2011 .

Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al2O3 Films using 18O Isotope

T. Nabatame, A. Toriumi, T. Yasuda, 2003 .

III-V-semiconductor-on-insulator MISFETs on Si with buried SiO2 and Al2O3 layers by direct wafer bonding

M. Takenaka, S. Takagi, Y. Nakano, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO 2 Etching and Removal of C-F Polymer Residues

G. Lucovsky, T. Yasuda, 1992 .

ZnSe epitaxy on a GaAs(110) surface

T. Yasuda, T. Yao, A. Ohtake, 1997 .

Role of interface chemistry and growing surface stoichiometry on the generation of stacking faults in ZnSe/GaAs

T. Yasuda, T. Yao, K. Kimura, 1997 .

Photoluminescence and cathodoluminescence studies of ZnSe quantum structures embedded in ZnS

Y. Segawa, T. Yasuda, T. Sekiguchi, 1998 .

Si-N Bonding at The SiO 2 /Si Interfaces During Deposition of SiO 2 by the Remote Pecvd Process

G. Lucovsky, T. Yasuda, S. Habermehl, 1991 .

Characterization and control of II–VI/III–V heterovalent interfaces

T. Yasuda, T. Yao, A. Ohtake, 1998 .

Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H‐terminated Si surfaces

G. Lucovsky, T. Yasuda, D. Aspnes, 1994 .

Structural degradation of thin HfO2 film on Ge during the postdeposition annealing

T. Yasuda, N. Miyata, Y. Abe, 2010 .

Atomic scale characterization of HfO2∕Al2O3 thin films grown on nitrided and oxidized Si substrates

Y. Hoshino, Y. Kido, T. Nabatame, 2004 .

Evidence of rapid equilibration near the hot filament in diamond deposition

T. Yasuda, H. Komiyama, M. Ihara, 1993 .

Control of Process-Induced Defects in the Formation of Single and Multiple layer dielectric Structures for Si Semiconductor Devices

G. Lucovsky, T. Yasuda, S. He, 1992 .

ZnSe epitaxial growth on zinc- and selenium-treated GaAs(001) surfaces observed by STM

T. Yasuda, Kazunobu Tanaka, T. Yao, 1996 .

Reflectance Difference Spectroscopy in Vacuum–Ultraviolet Range: Developing Measurement System and Applying to Characterization of SiO2/Si Interfaces

T. Yasuda, T. Horikawa, Masatoshi Tanaka, 2010 .

Time-evolution of thermal oxidation on high-index silicon surfaces: Real-time photoemission spectroscopic study with synchrotron radiation

A. Yoshigoe, Y. Teraoka, T. Yasuda, 2012 .

Nature and origins of stacking faults from a ZnSe/GaAs interface

T. Yasuda, T. Yao, A. Ohtake, 1997 .

Structure and composition of the ZnSe(001) surface during atomic-layer epitaxy

T. Yasuda, T. Hanada, T. Yao, 1999 .

Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition

G. Lucovsky, T. Yasuda, Y. Ma, 1993 .

Nitridation Processes on GaAs(001) Surfaces: Optical, Structural, and Chemical Analysis

N. Kumagai, T. Yasuda, T. Hanada, 1998 .

Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies

J. Wortman, V. Misra, G. Lucovsky, 1994 .

Control of Si-SiO 2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes

Veena Misra, B. Hornung, G. Lucovsky, 1993 .

Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation

S. Yamasaki, T. Yasuda, M. Nishizawa, 2001 .

Controlled bond formation between chemical vapor deposition Si and ultrathin SiO2 layers

S. Yamasaki, T. Yasuda, Kazunobu Tanaka, 2000 .

Selective-area formation of Si microstructures using ultrathin SiO2 mask layers

S. Yamasaki, T. Yasuda, Kazunobu Tanaka, 1999 .

The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001)

T. Yasuda, T. Yao, A. Ohtake, 1998 .

Dependence of defect generation and structure on interface chemistry in ZnSe/GaAs

T. Yasuda, T. Yao, A. Ohtake, 1997 .

Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

T. Yasuda, Kazunobu Tanaka, T. Yao, 1996 .

Molecular beam epitaxial growth of P-ZnSe:N using a novel plasma source

T. Yasuda, Kazunobu Tanaka, T. Yao, 1997 .

Sublimation growth of high-purity ZnSe single crystals and photoluminescence

T. Yasuda, K. Mochizuki, K. Masumoto, 1994 .

Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs

T. Yasuda, T. Yao, K. Kimura, 1996 .

Photoinduced anisotropic conversion of bonding and lone-pair electrons in As 2 S 3 sglass

Victor Lyubin, A. Kolobov, T. Yasuda, 1997 .

Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies

S. Yamasaki, M. Niwano, T. Yasuda, 2001 .

Self-assembled formation of ZnCdSe quantum dots on atomically smooth ZnSe surfaces on GaAs(001) by molecular beam epitaxy

T. Yasuda, T. Hanada, T. Yao, 1999 .

Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

T. Yasuda, N. Miyata, A. Ohtake, 2014 .

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Y. Morita, K. Fukuda, W. Mizubayashi, 2015 .

Band-to-band tunneling current enhancement utilizing isoelectronic trap and its application to TFETs

Y. Morita, K. Fukuda, S. Migita, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Study of gate leakage current paths in p-channel tunnel field-effect transistor by current separation measurement and device simulation

Y. Morita, K. Fukuda, W. Mizubayashi, 2015 .

Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence

M. Shen, Y. Segawa, T. Yasuda, 1998 .

Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition

H. Iwai, T. Yasuda, P. Ahmet, 2012 .

Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures

I. Tanaka, T. Nabatame, A. Toriumi, 2003 .

Hydrogenated and oxidized vicinal Si(001) surfaces investigated by reflectance-difference spectroscopy

L. Mantese, T. Yasuda, D. Aspnes, 1996 .

Atomic-layer resolved monitoring of thermal oxidation of Si(001) by reflectance difference oscillation technique

Naoto Kumagai, Tetsuji Yasuda, Kikuo Yamabe, 2004 .

Observation of oscillating behavior in the reflectance difference spectra of oxidized Si(001) surfaces

S. Yamasaki, T. Yasuda, T. Ohta, 2002 .

ZnSe heteroepitaxy on GaAs(0 0 1) and GaAs(1 1 0)

T. Yasuda, T. Yao, A. Ohtake, 1998 .

Origin of type-C defects on the Si(100)-(2×1) surface

S. Yamasaki, M. Niwano, T. Yasuda, 2002 .

Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

S. Takagi, Y. Morita, T. Yasuda, 2006 .

Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

S. Takagi, Y. Morita, T. Yasuda, 2004 .

Influence of initial surface reconstruction on the interface structure of HfO2/GaAs

T. Yasuda, N. Miyata, A. Ohtake, 2008 .

Structure of Se-adsorbed GaAs(111) A -(2 3 ×2 3 )- R 30° surface

T. Yasuda, T. Hanada, T. Yao, 1999 .

Effect of interfacial Si oxidation on interface dipoles in HfO2/Si structures

T. Yasuda, N. Miyata, Y. Abe, 2013 .

IN SITU OBSERVATION OF STRAIN-INDUCED OPTICAL ANISOTROPY OF ZNSXSE1-X/GAAS(110) DURING MOLECULAR-BEAM EPITAXY

T. Yasuda, T. Hanada, K. Hingerl, 1999 .

In situ determination of in-plane strain anisotropy in ZnSe(001)/GaAs layers using reflectance difference spectroscopy

T. Yasuda, T. Hanada, K. Hingerl, 1998 .

In situ characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopy

T. Yasuda, Kazunobu Tanaka, T. Yao, 1996 .

Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering

S. Takagi, M. Takenaka, M. Yokoyama, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Structural Change of As-Stabilized GaAs(001)-( 2×4) and -c( 4×4) Induced by Zinc Exposure

T. Yasuda, T. Yao, L. Kuo, 1997 .

In situ Reflectance Difference Spectroscopy and Reflection High-Energy Electron Diffraction Observation of Nitridation Processes on GaAs(001) Surfaces

N. Kumagai, T. Yasuda, T. Hanada, 1997 .

Strain- and field-induced optical anisotropies of GaAs measured by RDS

N. Kumagai, T. Yasuda, T. Hanada, 2001 .

In situ measurement of carrier concentration in n-ZnSe by reflectance difference spectroscopy (RDS)

N. Kumagai, T. Yasuda, T. Hanada, 2000 .

Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy

N. Kumagai, T. Yasuda, T. Hanada, 1998 .

Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy

T. Yasuda, Kazunobu Tanaka, T. Yao, 1997 .

Optical anisotropy of oxidized Si(001) surfaces and its oscillation in the layer-by-layer oxidation process.

S. Yamasaki, T. Yasuda, T. Ohta, 2001, Physical review letters.

Ge-induced(1×2)surface reconstruction on GaAs(001): A precursor to As segregation

T. Yasuda, N. Miyata, A. Ohtake, 2008 .

Adsorption of Zn on the GaAs(001)-(2×4) surface

T. Yasuda, T. Hanada, T. Yao, 1999 .

Grouping of independent single molecules on silicon surfaces

Jing Yong Ye, Tetsuji Yasuda, Mitsuru Ishikawa, 1998 .

Control of crystallinity of microcrystalline silicon film grown on insulating glass substrates

T. Umeda, S. Yamasaki, T. Yasuda, 1998 .

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013 .

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

M. Takenaka, S. Takagi, M. Yokoyama, 2010 .

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

M. Takenaka, S. Takagi, Y. Nakano, 2010 .

GROWTH OF AMORPHOUS-LAYER-FREE MICROCRYSTALLINE SILICON ON INSULATING GLASS SUBSTRATES BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

T. Umeda, S. Yamasaki, T. Yasuda, 1997 .

Improved C–V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

T. Nabatame, A. Toriumi, T. Yasuda, 2005 .

Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

Y. Morita, K. Fukuda, W. Mizubayashi, 2017 .

Fast In-diffusion of Hydrogen at the Initial Stage of Hydrogen Plasma Treatment on a-Si:H Films Observed by In-situ ESR Measurements

S. Yamasaki, T. Yasuda, U. Das, 2000 .

Ultrathin layer transfer technology for post-Si semiconductors

T. Yasuda, O. Ichikawa, M. Hata, 2013 .

Low temperature plasma-assisted oxidation and thin-film deposition processes for forming device-quality SiO2/Si and composite dielectric-SiO2/Si heterostructures

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Low‐temperature formation of device‐quality SiO2/Si interfaces by a two‐step remote plasma‐assisted oxidation/deposition process

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition of SiO2 on plasma‐processed Si substrates

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process

G. Lucovsky, S. Habermehl, G. Lucovsky, 1992 .

Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

M. Takenaka, S. Takagi, T. Yasuda, 2009 .

Correlation between channel mobility improvements and negative Vth shifts in III–V MISFETs: Dipole fluctuation as new scattering mechanism

N. Taoka, M. Takenaka, S. Takagi, 2010, 2010 International Electron Devices Meeting.

Kelvin probe study on formation of electric dipole at direct-contact HfO2/Si interfaces

T. Yasuda, N. Miyata, Y. Abe, 2011 .

Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition

G. Lucovsky, G. Lucovsky, T. Yasuda, 1994 .

In situ ESR observation of interface dangling bond formation processes during amorphous SiO2 growth on Si

T. Umeda, S. Yamasaki, T. Yasuda, 2002 .

In situ optical monitoring of the initial oxidation processes on Si[001] by reflectance difference spectroscopy (RDS)

K. Yamabe, S. Yamasaki, T. Yasuda, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors

T. Yasuda, N. Miyata, T. Mano, 2014 .

Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2013, IEEE Transactions on Nanotechnology.

Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures

T. Yasuda, Y. Urabe, N. Miyata, 2010 .

Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures

T. Gotow, T. Yasuda, H. Fujishiro, 2015 .

Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. II. Selective deposition in the regions defined by electron-beam irradiation

S. Yamasaki, T. Yasuda, M. Nishizawa, 2001 .

In situ electron spin resonance observation of Si(111) 7×7 surface during hydrogenation process

S. Yamasaki, T. Yasuda, J. Isoya, 2001 .

Comparison between Direct-Contact HfO2/Ge and HfO2/GeO2/Ge Stack Structures: Physical and Electrical Properties

T. Yasuda, N. Miyata, Y. Abe, 2008 .

Electron spin resonance observation of the Si(111)-(7x7) surface and its oxidation process.

T. Umeda, S. Yamasaki, T. Yasuda, 2001, Physical review letters.

Relationships between Interface Structures and Electrical Properties in the High-k/III–V System

M. Takenaka, S. Takagi, M. Yokoyama, 2009 .

PHOTOINDUCED ANISOTROPY IN VITREOUS AS2S3 : A REFLECTANCE-DIFFERENCE STUDY

A. Kolobov, T. Yasuda, Kazunobu Tanaka, 1997 .

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

N. Taoka, M. Takenaka, S. Takagi, 2011, IEEE Electron Device Letters.

Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2010 .

Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors

Y. Morita, K. Fukuda, W. Mizubayashi, 2015 .

Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

Y. Xuan, T. Yasuda, D. Hojo, 2004 .

P-type Conduction in Bulk ZnSe by Nitrogen Ion-Implantation

J. Merz, K. Shahzad, T. Yasuda, 1991 .

Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Measurements of a component of the piezo-optic tensor of Si by reflectance difference spectroscopy

N. Kumagai, T. Yasuda, T. Hanada, 2003 .