N. Fukuhara

发表

Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 International Electron Devices Meeting.

Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

N. Taoka, M. Takenaka, S. Takagi, 2012 .

Self-aligned metal source/drain InxGa1−xAs n-MOSFETs using Ni-InGaAs alloy

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal?Oxide?Semiconductor Field-Effect Transistors Using Ni?InGaAs Alloy

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2011 .

Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

N. Taoka, M. Takenaka, S. Takagi, 2013, IEEE transactions on device and materials reliability.

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

T. Mishima, N. Fukuhara, F. Horikiri, 2019, IEEE Transactions on Semiconductor Manufacturing.

High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi, 2009 .

Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013, IEEE Transactions on Electron Devices.

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

N. Taoka, M. Takenaka, S. Takagi, 2012 .

Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

S. Takagi, M. Takenaka, T. Hoshii, 2011, 2011 International Electron Devices Meeting.

High-performance GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition

N. Fukuhara, M. Hata, T. Osada, 2014 .

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

N. Fukuhara, M. Hata, T. Osada, 2014 .

Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures

O. Ichikawa, N. Fukuhara, F. Horikiri, 2020, Applied Physics Express.

Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)

O. Ichikawa, N. Fukuhara, F. Horikiri, 2021, Journal of Applied Physics.

Thermal-assisted contactless photoelectrochemical etching for GaN

T. Mishima, N. Fukuhara, F. Horikiri, 2020, Applied Physics Express.

Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source

T. Mishima, N. Fukuhara, F. Horikiri, 2019, Applied Physics Express.

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

N. Taoka, M. Takenaka, S. Takagi, 2012 .

AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

M. Takenaka, S. Takagi, T. Yasuda, 2011 .

Uniformity characterization of SiC, GaN, and α-Ga2O3 Schottky contacts using scanning internal photoemission microscopy

T. Mishima, N. Fukuhara, T. Shinohe, 2021, Japanese Journal of Applied Physics.

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

T. Mishima, N. Fukuhara, F. Horikiri, 2020, Japanese Journal of Applied Physics.

Residual impurities in epitaxial layers grown by MOVPE

N. Fukuhara, M. Hata, T. Maeda, 1988 .

III-V-semiconductor-on-insulator MISFETs on Si with buried SiO2 and Al2O3 layers by direct wafer bonding

M. Takenaka, S. Takagi, Y. Nakano, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement

Y. Shimogaki, Y. Nakano, O. Ichikawa, 2011 .

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties

Y. Shimogaki, Y. Nakano, O. Ichikawa, 2007 .

The Effects of Oxygen Impurity in TMA on AIGaAs Layers Grown by MOVPE

N. Fukuhara, M. Hata, T. Maeda, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks

T. Egawa, N. Fukuhara, T. Osada, 2023, Journal of Applied Physics.

Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A

O. Ichikawa, N. Fukuhara, M. Hata, 2016 .

Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering

S. Takagi, M. Takenaka, M. Yokoyama, 2012, 2012 Symposium on VLSI Technology (VLSIT).

N. Fukuhara, M. Hata, H. Yamada, 2007 .

High current gain stability of carbon-doped p-GaAs in InGaP/GaAs heterojunction bipolar transistors

N. Fukuhara, M. Hata, Hisashi Yamada, 2007 .

The epitaxial growth of gallium arsenide using triethylarsine

N. Fukuhara, M. Hata, Y. Matsuda, 1989 .

The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors

N. Fukuhara, M. Hata, H. Yamada, 2007 .

K. Akimoto, N. Fukuhara, M. Hata, 2008 .

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013 .

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

M. Takenaka, S. Takagi, M. Yokoyama, 2010 .

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

M. Takenaka, S. Takagi, Y. Nakano, 2010 .

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

N. Fukuhara, M. Hata, T. Osada, 2015 .

Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

M. Takenaka, S. Takagi, T. Yasuda, 2009 .

Correlation between channel mobility improvements and negative Vth shifts in III–V MISFETs: Dipole fluctuation as new scattering mechanism

N. Taoka, M. Takenaka, S. Takagi, 2010, 2010 International Electron Devices Meeting.

Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2013, IEEE Transactions on Nanotechnology.

Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82– ions

N. Fukuhara, F. Horikiri, T. Yoshida, 2019, Applied Physics Express.

Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

A. Uedono, N. Fukuhara, L. Sang, 2023 .

Substrate off-angle dependency of Al content in Al x Ga1−x N/GaN high-electron-mobility transistor structures on free-standing GaN substrates

N. Fukuhara, F. Horikiri, Y. Narita, 2021 .

Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

N. Taoka, M. Takenaka, M. Yokoyama, 2012, 2012 International Conference on Indium Phosphide and Related Materials.

Relationships between Interface Structures and Electrical Properties in the High-k/III–V System

M. Takenaka, S. Takagi, M. Yokoyama, 2009 .

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

N. Taoka, M. Takenaka, S. Takagi, 2011, IEEE Electron Device Letters.

Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

N. Taoka, M. Takenaka, S. Takagi, 2011 .