H. Chen

Low capacitance approaches for 22nm generation Cu interconnect

S. Shue, T. Bao, H. Chen, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility

A. Simon, D. Edelstein, C. Cabral, 2010, 2010 International Electron Devices Meeting.

CVD Co and its application to Cu damascene interconnections

A. Simon, D. Edelstein, C. Cabral, 2010, 2010 IEEE International Interconnect Technology Conference.

Nanoscale Metal Silicides

H. Chen, L. Chen, W. Wu, 2006, 2006 International Workshop on Junction Technology.

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Supercritical CO/sub 2/ clean with novel solution for 65 nm and beyond BEOL performance improvement

M. Liang, J.L. Yang, H. Lo, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

BEOL process integration for the 7 nm technology node

F. Mont, T. Spooner, X. Zhang, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).