J. Chu

发表

Strained Si NMOSFETs for high performance CMOS technology

A. Grill, M. Ieong, S. Koester, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

M. Ieong, D. Boyd, S. Koester, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth

A. Grill, S. Koester, G. Dehlinger, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Negative differential conductance in strained Si point contacts and wires

S. Koester, K. Ismail, J. Chu, 1997 .

Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well

S. Koester, K. Ismail, J. Chu, 1997, IEEE Electron Device Letters.

Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

C. Dimitrakopoulos, A. Grill, M. Krishnan, 2011, 1103.6160.

Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics

A. Mocuta, B.H. Lee, T. Kanarsky, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Channel design and mobility enhancement in strained germanium buried channel MOSFETs

M. Ieong, H. Shang, X. Wang, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

S. Koester, G. Dehlinger, J. Chu, 2006, IEEE Journal of Selected Topics in Quantum Electronics.

High-speed Germanium-on-SOI lateral PIN photodiodes

A. Grill, A. Grill, S. Koester, 2004, IEEE Photonics Technology Letters.

Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire

Guofu Niu, J. Cressler, B. Meyerson, 1999, IEEE Electron Device Letters.

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

J. Jordan-Sweet, B. Meyerson, K. Kavanagh, 1998 .

X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates

J. Jordan-Sweet, J. Ott, J. Chu, 1998 .

Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

Keith A. Jenkins, Byoung Hun Lee, P. Oldiges, 2003 .

p-Type SiGe transistors with low gate leakage using SiN gate dielectric

I. Adesida, R. Hammond, S. Koester, 1999, IEEE Electron Device Letters.

SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

H.-S. Philip Wong, Steven J. Koester, Jack O. Chu, 2001 .

High-speed germanium-on-insulator photodetectors

A. Grill, S. Koester, G. Dehlinger, 2005, 2005 IEEE LEOS Annual Meeting Conference Proceedings.

1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD

S. Koester, K. Ismail, J. Chu, 1998 .

Si/SiGe Quantum Devices, Quantum Wells, and Electron-Spin Coherence

S. Coppersmith, R. Joynt, D. Savage, 2009 .

Si / SiGe Quantum Devices and Quantum Wells : Electron Spin Coherence

Friesen, M. Lagally, S. Coppersmith, 2007 .

Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas

S. Coppersmith, R. Blick, J. Chu, 2006 .

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

S. Coppersmith, R. Blick, R. Joynt, 2005, cond-mat/0508107.

Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot

D. E. Savage, M. G. Lagally, S. N. Coppersmith, 2004, cond-mat/0404399.

Extendibility of NiPt silicide to the 22-nm node CMOS technology

Anna W. Topol, K. Ohuchi, V. Narayanan, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures

Bernard S. Meyerson, J. O. Chu, Katherine L. Saenger, 1995 .

Determination of spin- and valley-split energy levels in strained Si quantum wells

S. Koester, K. Ismail, J. Chu, 1997 .

Submicrometer p-type SiGe modulation-doped field-effect transistors for high speed applications

B. Meyerson, K. Ismail, I. Adesida, 1997 .

Electrical characterization of Si/Si 0.7 Ge 0.3 quantum well wires fabricated by low damage CF 4 reactive ion etching

S. Koester, K. Ismail, J. Chu, 1997 .

Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells

S. Koester, K. Ismail, J. Chu, 1997 .

1.1 GHz MSM photodiodes on relaxed Si/sub 1-x/Ge/sub x/ grown by UHV-CVD

S. Koester, K. Ismail, J. Chu, 1998, 56th Annual Device Research Conference Digest (Cat. No.98TH8373).

High resolution x-ray diffraction measurements of strain relaxed SiGe/Si structures

J. Jordan-Sweet, J. Chu, P. Mooney, 1994 .

Nucleation of dislocations in SiGe layers grown on (001)Si

J. Tersoff, J. Chu, P. Mooney, 1994 .

Nucleation of Dislocations in SIGe Layers

J. Chu, P. Mooney, F. Legoues, 1993 .

Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices

B. Meyerson, J. Chu, M. Tejwani, 1992 .

Adaptive wiring for 20nm scale epitaxial silicon Ohmic contacts to silicon nanowires

G. Cohen, W. Haensch, M. Rooks, 2007 .

Heteroepitaxial growth of Ge on (100) Si by ultrahigh vacuum, chemical vapor deposition

J. Chu, B. Cunningham, Sha Akbar, 1991 .

Morphology of germanium nanowires grown in presence of B2H6

S. Guha, J. Chu, E. Tutuc, 2006 .

Strain relaxation and mosaic structure in relaxed SiGe layers

J. Chu, P. Mooney, S. Nelson, 1993 .

Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact

K. Ismail, J. Chu, U. Kunze, 2002 .

Crystallographic tilting resulting from nucleation limited relaxation

J. Chu, P. Mooney, F. Legoues, 1993 .

Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire

J. Cressler, G. Niu, B. Meyerson, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Free Standing Silicon as a Compliant Substrate for SiGe

G. Cohen, J. Chu, P. Mooney, 2003 .

Controllable valley splitting in silicon quantum devices

S. Coppersmith, R. Joynt, J. Chu, 2006, cond-mat/0611221.

Doping of germanium nanowires grown in presence of PH3

J. Ott, S. Guha, J. Chu, 2006 .

Counting vibrational quanta with a diode laser probe: Bending and stretching excitation in CO2 caused by collisions with hot atoms from excimer laser photolysis

G. Flynn, J. Chu, R. E. Weston, 1984 .

Germanium-on-insulator photodetectors

Alfred Grill, Jeremy D. Schaub, Steven J. Koester, 2005 .

High-speed lateral PIN photodiodes in silicon technologies

Alfred Grill, Jeremy D. Schaub, Steven J. Koester, 2004, SPIE OPTO.

Electron cyclotron resonance in silicon/silicon germanium heterostructures

B. Meyerson, J. Chu, Z. Schlesinger, 1993 .

Spatially Confined Chemistry: Fabrication of Ge Quantum Dot Arrays

J. Heath, S. Wind, J. Bucchignano, 1996 .

Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

C. Dimitrakopoulos, A. Grill, M. Krishnan, 2011, 1103.6160.

Raman scattering analysis of relaxed GexSi1−x alloy layers

F. H. Dacol, Jack O. Chu, Patricia M. Mooney, 1993 .

Spatially resolved Raman spectroscopy of a step graded GexSi1−x strain relief structure

B. Meyerson, J. Chu, P. Mooney, 1993 .

Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

E. Mendez, B. Meyerson, K. Ismail, 1992 .

Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane

J. Jasinski, J. Chu, 1988 .

Undoped SiGe heterostructure field effect transistors

T. Jackson, B. Meyerson, J. Chu, 1993, 51st Annual Device Research Conference.

Diode laser probes of vibrational excitation in CO2 caused by hot atoms from excimer laser photolysis

G. Flynn, J. Chu, R. E. Weston, 1984 .

Observation of high vibrational excitation in HCN molecules produced from 193 nm photolysis of 1,3,5‐triazine

G. Flynn, J. Chu, S. Goates, 1984 .

High-performance SiGe MODFET technology

S. Koester, J. Ott, D. Canaperi, 2004 .

Erbium-Doped Silicon Prepared by UHV/CVD

J. Chu, R. Collins, D. Beach, 1992 .

FQHE states of high mobility n-Si/Si1−xGex heterostructures in pulsed magnetic fields

R. B. Dunford, B. Meyerson, K. Ismail, 1995 .

High performance self-aligned SiGe p-type modulation-doped field-effect transistors

K. Ismail, J. Chu, M. Arafa, 1996, 1996 54th Annual Device Research Conference Digest.

Absolute rate constants for silylene reactions with hydrocarbons at 298 K

J. Jasinski, J. Chu, D. Beach, 1987 .

Thermal stability of undoped strained Si channel SiGe heterostructures

H. Klauk, T. Jackson, J. Chu, 1996 .

SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing

B. Meyerson, J. Chu, E. Yang, 1994, IEEE Electron Device Letters.

Measurements of alloy composition and strain in thin GexSi1−x layers

F. H. Dacol, Jack O. Chu, Patricia M. Mooney, 1994 .

Infrared emission studies of vibrational excitation in CH3 fragments produced from ArF and KrF laser photolysis of Cd(CH3)2 and Zn(CH3)2

G. Flynn, R. Osgood, J. Chu, 1985 .

Absolute rate constants for silylene reactions with diatomic molecules

J. Jasinski, J. Chu, D. Beach, 1988 .

Quantum yield studies of disilane photodissociation at 193 nm by infrared diode laser spectroscopy

J. McKillop, J. Jasinski, J. Chu, 1989 .

Laser-Initiated Dry Etching of SiO2

G. Flynn, R. Osgood, J. Chu, 1985, Topical Meeting on Microphysics of Surfaces, Beams, and Adsorbates.

Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

P. McIntyre, J. Chu, P. Mooney, 2002 .

Spin-Based Quantum Dot Quantum Computing in Silicon

Levente J. Klein, Mark A. Eriksson, Robert Joynt, 2004, Quantum Inf. Process..

Scanning tunneling microscopy of in situ cleaved and hydrogen passivated Si(110) cross-sectional surfaces

J. Chu, R. Feenstra, M. A. Lutz, 1995 .

Influence of misfit dislocations on the surface morphology of Si1−xGex films

J. Chu, P. Mooney, R. Feenstra, 1995 .

Strain relaxation and threading dislocation density in helium-implanted and annealed Si1-xGex/Si(100) heterostructures

J. Ott, J. Chu, P. Mooney, 2004 .

Interface morphology in strained layer epitaxy of Si/?Ge? layers studied by x-ray scattering under grazing incidence and atomic force microscopy

T. Metzger, K. Ismail, J. Chu, 1999 .

UNIQUE X-RAY DIFFRACTION PATTERN AT GRAZING INCIDENCE FROM MISFIT DISLOCATIONS IN SIGE THIN FILMS

J. Jordan-Sweet, J. Chu, P. Mooney, 1996 .

Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias

S. Koester, K. Jenkins, J. Ott, 2005, IEEE Electron Device Letters.

Low temperature magnetotransport of 2D electron and hole systems in high-mobility SiSi1 − xGex heterostructures

V. A. Stadnik, R. B. Dunford, B. Meyerson, 1996 .

SiGe Technology: Heteroepitaxy and High-Speed Microelectronics

J. O. Chu, Patricia M. Mooney, J. Chu, 2000 .

Germanium channel MOSFETs: Opportunities and challenges

Martin M. Frank, Stephen W. Bedell, Evgeni P. Gusev, 2006, IBM J. Res. Dev..

Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

S. Koester, J. Ott, D. Canaperi, 2005, IEEE Electron Device Letters.

Spectral distribution of CO2 vibrational states produced by collisions with fast hydrogen atoms from laser photolysis of HBra)

G. Flynn, J. Chu, R. E. Weston, 1983 .

Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature

B. Meyerson, J. Chu, P. Mooney, 1997 .

Opportunities and Challenges of Germanium Channel MOSFETs

K. Guarini, M. Ieong, E. Gusev, 2007 .

Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices

J. Jordan-Sweet, K. Ismail, J. Chu, 1995 .

Evolution of strain relaxation in step‐graded SiGe/Si structures

J. Jordan-Sweet, J. Chu, P. Mooney, 1995 .

High hole mobility in SiGe alloys for device applications

Bernard S. Meyerson, J. O. Chu, B. Meyerson, 1994 .

High-performance Si/SiGe n-type modulation-doped transistors

B. Meyerson, K. Chan, S. Rishton, 1993, IEEE Electron Device Letters.

Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

Anna W. Topol, M. Khare, C. Lavoie, 2007, 2007 IEEE International Electron Devices Meeting.

J. Chu, P. Mooney, K. Shum, 1997 .

Thermal Stability of Strained Si on Relaxed Si 1−x Ge x Buffer Layers

Kevin K. H. Chan, J. Jordan-Sweet, S. Koester, 2001 .

J. Chu, P. Mooney, K. Shum, 1996 .

High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

Steven J. Koester, J. O. Chu, R. A. Groves, 1999 .

Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

Bernard S. Meyerson, J. O. Chu, S. F. Nelson, 1993 .

Effect of Ge profile on the frequency response of a SiGe pFET on sapphire technology

J. Cressler, B. Meyerson, S. Mathew, 1997, 1997 55th Annual Device Research Conference Digest.

113-GHz fT graded-base SiGe HBTs

Bernard S. Meyerson, David L. Harame, A. C. Megdanis, 1993, 51st Annual Device Research Conference.

SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition

J. Ott, J. Chu, P. Mooney, 2000 .

Quantum indistinguishability effects of confined polyexcitons

J. Chu, P. Mooney, K. Shum, 1999 .

Electron spin coherence in Si

J. Bokor, S. Coppersmith, J. Chu, 2006 .

Elastic strain relaxation in free-standing SiGe/Si structures

G. Cohen, J. Chu, P. Mooney, 2004 .

Strained Si-on-Insulator Fabricated from Elastically-Relaxed Si/SiGe Structures

G. Cohen, J. Chu, P. Mooney, 2004 .

Electron and hole mobility enhancement in strained SOI by wafer bonding

James L. Speidell, Steven A. Cordes, Steven J. Koester, 2002 .

Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS

Ying Zhang, Meikei Ieong, Huiling Shang, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Facet formation in strained Si1−x Gex films

J. Tersoff, J. Chu, P. Mooney, 1994 .

Influence of He implantation conditions on strain relaxation and threading dislocation density in Si 0.8 Ge 0.2 virtual substrates

J. Ott, J. Chu, P. Mooney, 2004 .

Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1−xGex Layers on Si(001) Substrates

A. Grill, J. Chu, P. Mooney, 2001 .

80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax

Christopher V. Jahnes, John A. Ott, Michael J. Rooks, 2003 .

N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers

Kevin K. H. Chan, J. Jordan-Sweet, D. Boyd, 2005 .

Near band‐edge photoluminescence in relaxed Si1−xGex layers

J. O. Chu, F. K. LeGoues, Patricia M. Mooney, 1995 .

Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

S. Koester, K. Rim, J. Ott, 2001 .

High-transconductance n-type Si/SiGe modulation-doped field-effect transistors

J. Nocera, B. Meyerson, S. Rishton, 1992, IEEE Electron Device Letters.

113-GHz f/sub T/ graded-base SiGe HBT's

Bernard S. Meyerson, David L. Harame, A. C. Megdanis, 1993 .

Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching

U. Wieser, J. O. Chu, Ulrich Kunze, 2002 .

Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain

S. Laux, G. Cohen, W. Haensch, 2007 .

OBSERVATION OF BALLISTIC CONDUCTANCE AND AHARONOV-BOHM OSCILLATIONS IN SI/SIGE HETEROSTRUCTURES

K. Ismail, S. Washburn, J. Chu, 1994 .

Addendum: ‘‘Influence of misfit dislocations on the surface morphology of Si1−xGex films’’ [Appl. Phys. Lett. 66, 724 (1995)]

J. Chu, P. Mooney, R. Feenstra, 1995 .

Extremely high transconductance Ge/Si/sub 0.4/Ge/sub 0.6/ p-MODFET's grown by UHV-CVD

R. Hammond, S. Koester, J. Chu, 2000, IEEE Electron Device Letters.

Room‐temperature electron mobility in strained Si/SiGe heterostructures

Bernard S. Meyerson, J. O. Chu, S. F. Nelson, 1993 .

DC and RF performance of 0.25 μm p-type SiGe MODFET

B. Meyerson, K. Ismail, P. Fay, 1996, IEEE Electron Device Letters.