M.L. Green

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

W. Lai, F. Baumann, D. Monroe, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications

R. V. van Dover, P. Silverman, T. Sorsch, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

D. Muller, J. Grazul, P. Kalavade, 2001 .

High K gate dielectrics for the silicon industry

R. V. van Dover, M.L. Green, M. Morris, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).