M. Morris

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

W. Lai, F. Baumann, D. Monroe, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Single mask metal-insulator-metal (MIM) capacitor with copper damascene metallization for sub-0.18 /spl mu/m mixed mode signal and system-on-a-chip (SoC) applications

W. Lai, C. Pai, J. Miner, 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

1296-port MEMS transparent optical crossconnect with 2.07 petabit/s switch capacity

C. R. Giles, C. D. White, A. Gnauck, 2001, OFC 2001. Optical Fiber Communication Conference and Exhibit. Technical Digest Postconference Edition (IEEE Cat. 01CH37171).

Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications

R. V. van Dover, P. Silverman, T. Sorsch, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

D. Muller, J. Grazul, P. Kalavade, 2001 .

High K gate dielectrics for the silicon industry

R. V. van Dover, M.L. Green, M. Morris, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

Etching of high-k dielectric Zr1−xAlxOy films in chlorine-containing plasmas

V. M. Donnelly, Martin L. Green, R. V. Dover, 2001 .

50 nm Vertical Replacement-Gate (VRG) pMOSFETs

T. Nigam, James D. Plummer, J. F. Miner, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Multi-component high-K gate dielectrics for the silicon industry

Fred P. Klemens, Martin L. Green, Glen D. Wilk, 2001 .

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics

T. Nigam, A. Kornblit, M.R. Baker, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

89-GHz f/sub T/ room-temperature silicon MOSFETs

J. Bokor, M.D. Morris, D. Tennant, 1992, IEEE Electron Device Letters.