K. Ando

Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design

K. Yamaguchi, S. Ito, H. Namba, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

BONDING CONFIGURATIONS OF NITROGEN ABSORPTION PEAK AT 960 CM-1 IN SILICON OXYNITRIDE FILMS

K. Ando, E. Hasegawa, H. Ono, 1999 .

Infrared studies of transition layers at SiO2/Si interface

K. Ando, H. Ono, T. Ikarashi, 1998 .

Ultrathin silicon nitride films prepared by combining rapid thermal nitridation with low-pressure chemical vapor deposition

K. Ando, A. Ishitani, K. Hamano, 1991 .

Influence of H2-annealing on the hydrogen distribution near SiO2/Si(100) interfaces revealed by in situ nuclear reaction analysis

Koichi Ando, Markus Wilde, Katsuyuki Fukutani, 2002 .

Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface

K. Ando, H. Ono, Y. Miura, 2000 .

Effect of ultraviolet irradiation upon the recombination lifetime of silicon wafers covered with a dielectric film

K. Ando, F. Shimura, L. Zhong, 1993 .

Novel salicide technology using Ti hydrogenation for 0.1 /spl mu/m CMOS

K. Ando, T. Horiuchi, T. Horiuchi, 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

Mechanism of leakage current through the nanoscale SiO2 layer

K. Ando, S. Nagano, E. Hasegawa, 1994 .

Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems

Koichi Ando, Shinji Fujieda, Yoshinao Miura, 2003 .