T. Suzuki

Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design

K. Yamaguchi, S. Ito, H. Namba, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Boron and phosphorus diffusion through an SiO2 layer from a doped polycrystalline Si source under various drive-in ambients

T. Suzuki, K. Shimakura, Y. Yadoiwa, 1975 .

Polysilicon TFTs with low gate line resistance and low off-state current suitable for large area and high resolution LCDs

T. Suzuki, K. Miyata, K. Ono, 1989, International Technical Digest on Electron Devices Meeting.

Effect of hydrogenation of the leakage currents of laser-annealed polysilicon TFTs

T. Suzuki, K. Miyata, T. Aoyama, 1991 .

A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact

C. Salama, T. Suzuki, N. Fujishima, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Low-temperature polysilicon TFT with two-layer gate insulator using photo-CVD and APCVD SiO/sub 2/

T. Suzuki, N. Konishi, A. Mimura, 1988, IEEE Electron Device Letters.

Production of NbTi CICC's for SST-1 project at IPR

T. Suzuki, K. Kikuchi, G. Iwaki, 2001 .

Low Temperature Annealing of LPCVD Silicon Films

T. Suzuki, K. Miyata, T. Aoyama, 1987 .

A highly reliable 16 output high voltage NMOS/CMOS logic IC with shielded source structure

M. Saito, H. Sakuma, H. Wakaumi, 1983, International Electron Devices Meeting.

Parasitic effect-free, high voltage MOS ICs with shielded source structure

T. Suzuki, M. Saito, H. Sakuma, 1982, 1982 International Electron Devices Meeting.