S. Brown

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

M. Ieong, E. Cartier, V. Narayanan, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process

T. Ando, V. Narayanan, A. Kerber, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond

E. Cartier, V. Narayanan, J. Bruley, 2006, 2009 Symposium on VLSI Technology.