S. Inumiya

发表

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

S. Narasimha, M. Hargrove, R. Pal, 2011, 2011 International Electron Devices Meeting.

Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)

Y. Nara, S. Inumiya, S. Miyazaki, 2006 .

Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) with low threshold voltage, high drive current, and uniform electrical characteristics

Y. Tsunashima, K. Matsuo, A. Yagishita, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

The study of mobility-tin, trade-off in deeply scaled high-k / metal gate devices and scaling design guideline for 22nm-node generation

Y. Toyoshima, N. Kusunoki, S. Kawanaka, 2006, 2009 Symposium on VLSI Technology.

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

Y. Nara, S. Inumiya, G. Kozłowski, 2008 .

Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs

S. Kawanaka, I. Hirano, Y. Mitani, 2009, 2009 IEEE International Reliability Physics Symposium.

Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)

M. Takayanagi, K. Eguchi, I. Hirano, 2004 .

Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Y. Tsunashima, M. Takayanagi, M. Sato, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Reduction of threshold voltage deviation in Damascene metal gate MOSFETs

K. Matsuo, A. Yagishita, K. Suguro, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Careful examination on the asymmetric Vfb shift problem for poly-Si/HfSiON gate stack and its solution by the Hf concentration control in the dielectric near the poly-Si interface with small EOT expense

M. Takayanagi, A. Kaneko, K. Eguchi, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Conformable formation of high quality ultra-thin amorphous Ta/sub 2/O/sub 5/ gate dielectrics utilizing water assisted deposition (WAD) for sub 50 nm damascene metal gate MOSFETs

Y. Tsunashima, A. Yagishita, K. Suguro, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

T. Chikyow, K. Yamabe, K. Yamada, 2006 .

Characterization of HfSiON gate dielectrics using monoenergetic positron beams

A. Uedono, T. Chikyow, N. Umezawa, 2006 .

Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

A. Uedono, K. Yamada, T. Aoyama, 2007 .

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Masakazu Goto, Kikuo Yamabe, Yuichiro Mitani, 2013, Microelectron. Reliab..

Chemical controllability of charge states of nitrogen-related defects inHfOxNy: First-principles calculations

T. Chikyow, N. Umezawa, K. Shiraishi, 2008 .

Characterization of chemical bonding features and defect state density in HfSiOx Ny /SiO2 gate stack

S. Inumiya, K. Makihara, S. Higashi, 2007 .

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Takayanagi, S. Inumiya, M. Suzuki, 2002, Digest. International Electron Devices Meeting,.

Nitrogen profile control by plasma nitridation technique for poly-Si gate HfSiON CMOSFET with excellent interface property and ultra-low leakage current

K. Sekine, S. Inumiya, Y. Tsunashima, 2003, IEEE International Electron Devices Meeting 2003.

Improvement of threshold voltage deviation in damascene metal gate transistors

Yoshitaka Tsunashima, Tsuyoshi Shibata, Atsushi Yagishita, 2001 .

Study of high-k gate dielectrics by means of positron annihilation

A. Uedono, T. Chikyow, N. Umezawa, 2007 .

Improvement in NBTI by catalytic-CVD silicon nitride for hp-65nm technology

Y. Akasaka, Y. Nara, K. Torii, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique

N. Umezawa, K. Yamabe, Y. Nara, 2007 .

Tight Distribution of Dielectric Characteristics of HfSiON in Metal Gate Devices

A. Uedono, T. Chikyow, N. Umezawa, 2007 .

Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON film

I. Hirano, Y. Mitani, Y. Nakasaki, 2010, 2010 IEEE International Reliability Physics Symposium.

Determination of Time to Breakdown of 0.8-1.2 nm EOT HfSiON Gate Dielectrics with Poly-Si and Metal Gate Electrodes

Y. Nara, K. Torii, S. Inumiya, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

High performance damascene metal gate MOSFETs for 0.1 /spl mu/m regime

Yoshitaka Tsunashima, Katsuhiko Hieda, Y. Akasaka, 2000 .