J. Schaeffer

发表

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

S. Narasimha, M. Hargrove, R. Pal, 2011, 2011 International Electron Devices Meeting.

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2 SRAM and ultra low-k back end with eleven levels of copper

M. Belyansky, L. Black, J. Holt, 2006, 2009 Symposium on VLSI Technology.

Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- $k$/Metal Gate Stack Device Reliability and Performance Enhancement

H. Tseng, J. Schaeffer, S. Kalpat, 2007, IEEE Transactions on Electron Devices.

Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- $k$ Dielectrics

C. Capasso, B. Winstead, D. Tekleab, 2010, IEEE Transactions on Electron Devices.

Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition

J. Schaeffer, R. Hegde, P. Tobin, 2005 .

Contacts and junctions for the 45nm node

J. Schaeffer, M. Raymond, C. Capasso, 2004, The Fourth International Workshop on Junction Technology, 2004. IWJT '04..

LASER Anneal to Enable Ultimate CMOS Scaling with PMOS Band Edge Metal Gate/High-K Stacks

D. Gilmer, S. Samavedam, J. Schaeffer, 2006, 2006 European Solid-State Device Research Conference.

Process-dependent defects in Si∕HfO2∕Mo gate oxide heterostructures

J. Schaeffer, L. Brillson, L. Fang, 2007 .

Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates

D. Gilmer, S. Samavedam, A. Demkov, 2003 .

Reactive physical vapor deposition of TixAlyN: Integrated plasma-surface modeling characterization

J. Schaeffer, Da Zhang, 2004 .

Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack

D. Gilmer, J. Curless, C. Tracy, 2006 .

Contributions to the effective work function of platinum on hafnium dioxide

B. E. White, Philip J. Tobin, S. Samavedam, 2004 .

Metal gate MOSFETs with HfO/sub 2/ gate dielectric

P. Abramowitz, P.J. Tobin, E. Luckowski, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Dual-metal gate CMOS with HfO2 gate dielectric

P. Abramowitz, J. Conner, E. Luckowski, 2002, Digest. International Electron Devices Meeting,.

Process-dependent electronic states at Mo/hafnium oxide/Si interfaces

J. Schaeffer, L. Brillson, L. Fang, 2007 .

Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration

J. Schaeffer, D. Triyoso, K. Hempel, 2013 .

Robust PEALD SiN spacer for gate first high-k metal gate integration

K. Hempel, J. Shu, D. H. Triyoso, 2012, 2012 IEEE International Conference on IC Design & Technology.

Materials Challenges for CMOS Junctions

J. Schaeffer, C. Capasso, M. Rendon, 2004 .

Impact of Zr addition on properties of atomic layer deposited HfO2

B. E. White, Rama I. Hegde, Dina H. Triyoso, 2006 .

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

Bich-Yen Nguyen, Raghaw Rai, M. Zavala, 2003 .

HfO2 Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium

M. Ramon, Bich-Yen Nguyen, R. Nieh, 2003 .

Oxidation of the Pt∕HfO2 interface: The role of the oxygen chemical potential

M. Stoker, J. Schaeffer, B. Potapkin, 2007 .

Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics

D. Gilmer, S. Samavedam, J. Schaeffer, 2007 .

Metal Gate Electrodes

J. Schaeffer, 2013 .

Challenges for the integration of metal gate electrodes

S. Samavedam, E. Luckowski, C. Capasso, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Scaling of Hafnium-based High-k Dielectrics

D. Gilmer, S. Samavedam, J. Schaeffer, 2007 .

Impact of precursors choice on characteristics of PEALD SiN for spacer applications

K. Hempel, J. Shu, D. H. Triyoso, 2013, Proceedings of 2013 International Conference on IC Design & Technology (ICICDT).

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

Glen D. Wilk, Dina H. Triyoso, D. Werho, 2007 .

Challenges for PMOS Metal Gate Electrodes and Solutions for Low Power Applications

D. Gilmer, S. Samavedam, A. Haggag, 2007 .

Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

Raghaw Rai, J. Schaeffer, Vidya Kaushik, 2007 .

Improved Electrical Properties of ALD $\hbox{Hf}_{x} \hbox{Zr}_{1 - x}\hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer

J. Schaeffer, M. Raymond, R. Hegde, 2008, IEEE Electron Device Letters.

Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability

D. Gilmer, C. Tracy, A. Haggag, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

D. Gilmer, S. Samavedam, A. Demkov, 2003, IEEE International Electron Devices Meeting 2003.

Hafnium dioxide gate dielectrics, metal gate electrodes, and phenomena occurring at their interfaces

J. Schaeffer, 2004 .

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides

D. Gilmer, S. Samavedam, J. Schaeffer, 2007 .

50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

A. Thean, M. Orlowski, B. Nguyen, 2003 .