Y. Liang

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

S. Narasimha, M. Hargrove, R. Pal, 2011, 2011 International Electron Devices Meeting.

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2 SRAM and ultra low-k back end with eleven levels of copper

M. Belyansky, L. Black, J. Holt, 2006, 2009 Symposium on VLSI Technology.

Advanced modeling and optimization of high performance 32nm HKMG SOI CMOS for RF/analog SoC applications

D. Daley, L. Wagner, S. Narasimha, 2012, 2012 Symposium on VLSI Technology (VLSIT).