M. Chan

Recess channel structure for reducing source/drain series resistance in ultra-thin SOI MOSFETs

S. S. Yuen, C. Hu, P. Ko, 1993, Proceedings of 1993 IEEE International SOI Conference.

Recessed-channel structure for fabricating ultrathin SOI MOSFET with low series resistance

F. Assaderaghi, M. Chan, C. Hu, 1994, IEEE Electron Device Letters.

A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation

C. Hu, Yu Wang, M. Chan, 2005 .

RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology

Chenming Hu, Sang Lam, M. Chan, 2003, IEEE Electron Device Letters.