E. Jones

Triple-self-aligned, planar double-gate MOSFETs: devices and circuits

J. Treichler, K. Guarini, G. Cohen, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Extreme scaling with ultra-thin Si channel MOSFETs

H.-S.P. Wong, Ying Zhang, Leathen Shi, 2002, Digest. International Electron Devices Meeting,.

Examination of hole mobility in ultra-thin body SOI MOSFETs

M. Ieong, W. Haensch, T. Kanarsky, 2002, Digest. International Electron Devices Meeting,.

High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

W. Haensch, H.-S.P. Wong, J. Ott, 2002, Digest. International Electron Devices Meeting,.

Two gates are better than one [double-gate MOSFET process]

J. Benedict, J. Treichler, H.-S.P. Wong, 2003, IEEE Circuits and Devices Magazine.

Electrical characterization of germanium p-channel MOSFETs

H.-S.P. Wong, E.C. Jones, P. Kozlowski, 2003, IEEE Electron Device Letters.

An Automatic Electronic Combined Blink-comparator and Measuring Engine

E. Jones, B. J. O'mara, A. A. Page, 1994, Publications of the Astronomical Society of Australia.

n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation

N. Cheung, H. Wong, E. Jones, 1997, 1997 IEEE Hong Kong Proceedings Electron Devices Meeting.