H. Huff

发表

H. Huff, 2009 .

Semiconductors, Elemental—Material Properties

H. Huff, 2003 .

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

George A. Brown, G. Bersuker, C. Olsen, 2001 .

Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

G. Bersuker, R. Bergmann, G. Gebara, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Effect of H 2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO 2

Howard R. Huff, Husam N. Alshareef, George A. Brown, 2000 .

High-k gate stacks for planar, scaled CMOS integrated circuits

George A. Brown, G. Bersuker, P. Lysaght, 2003 .

The “Ultimate” CMOS Device: A 2003 Perspective (Implications For Front‐End Characterization And Metrology)

H. Huff, P. Zeitzoff, 2003 .

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

G. Bersuker, M. Gardner, P. Zeitzoff, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Atomistic model for E' center generation during electrical stress

G. Bersuker, H. Huff, A. Korkin, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

High dielectric constant materials : VLSI mosfet applications

Howard R. Huff, D. C. Gilmer, D. Gilmer, 2005 .

Effect of H2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2

H. Huff, A. Karamcheti, T. Luo, 2000, IEEE Electron Device Letters.

Distribution Coefficient of Boron and Phosphorus in Silicon

H. Huff, T. Digges, O. B. Cecil, 1971 .

Future Opportunities in the Twenty-First Century

H. Huff, 2002 .

Semiconductor silicon 1981 : proceedings of the fourth International Symposium on Silicon Materials Science and Technology

H. Huff, R. Kriegler, 武石喜幸, 1977 .

Interfacial Layer-Induced Mobility Degradation in High-k Transistors

B. H. Lee, G. Bersuker, J. Peterson, 2004 .

Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer

G. Bersuker, K. Matthews, Y. Kim, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Atomistic model of electric stress induced defect generation in silicon oxide

G. Bersuker, H. Huff, A. Korkin, 2002 .

A model for gate oxide wear out based on electron capture by localized states

G. Bersuker, H. Huff, A. Korkin, 2002 .

Modeling trap generation process in thin oxides

G. Bersuker, H. Huff, Y. Jeon, 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

Sources of resonance-related errors in capacitance versus voltage measurement systems

H. Huff, I. Polishchuk, G. Brown, 2000 .

Characterization of ultrathin gate dielectrics formed by in-situ steam generation with nitrogen postprocessing

H. Huff, A. Karamcheti, T. Luo, 2002 .

Ultra-Thin High Quality Oxynitride Formed by NH3 Nitridation and High Pressure O2 Re-oxidation

D. Kwong, H. Huff, A. Karamcheti, 2000, 30th European Solid-State Device Research Conference.

Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxide

G. Miner, H. Huff, H. Alshareef, 2000 .

Thermal response of MOCVD hafnium silicate

G. Bersuker, S. Stemmer, P. Lysaght, 2003 .

Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

G. Bersuker, K. Choi, P. Majhi, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Measurement of Silicon Particles by Laser Surface Scanning and Angle‐Resolved Light Scattering

Howard R. Huff, Benjamin Y. H. Liu, Bradley W. Scheer, 1997 .

Observation of Quantum Galvanomagnetic Phenomena in n‐Type Indium Antimonide

H. Huff, H. Gatos, S. Kawaji, 1968 .

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Howard R. Huff, H. Huff, 2002 .

Influence of Silicon Slice Curvature on Thermally Induced Stresses

H. Huff, R. Bracken, S. Rea, 1971 .

Silicon Material Properties for VLSI Circuitry

H. R. Huff, H. Huff, J. E. Lawrence, 1982 .

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

U. Gösele, H. Huff, 津屋英樹, 1998 .

Field effect on magnetoresistance of N-type indium antimonide

H. Huff, H. Gatos, S. Kawaji, 1965 .

Proceedings - Electrochemical Society

Howard R. Huff, Byoung Hun Lee, Anatoli Korkin, 2005 .

Some Observations on Oxygen Precipitation/Gettering in Device Processed Czochralski Silicon

H. Huff, J. T. Robinson, H. Schaake, 1983 .

Plasma nitridation of very thin gate dielectrics

G. Bersuker, H. Huff, H. Alshareef, 2001 .

Computed tomography of the foot and ankle. Principles and applications.

H. Huff, M. Kravette, 1986, Journal of the American Podiatric Medical Association.

On the field effect measurements on indium antimonide surfaces

H. Huff, H. Gatos, S. Kawaji, 1969 .

Field effect measurements on the A and B {111} surfaces of indium antimonide

H. Huff, H. Gatos, S. Kawaji, 1966 .

RELAXATION PHENOMENA ON INDIUM ANTIMONIDE SURFACES AT HIGH ELECTRIC FIELDS.

H. Huff, H. Gatos, S. Kawaji, 1968 .

ELECTRONIC CONFIGURATION OF INDIUM ANTIMONIDE SURFACES.

H. Huff, H. Gatos, S. Kawaji, 1968 .

RELAXATION PHENOMENA AT HIGH ELECTRIC FIELD ON THE SURFACES OF INDIUM ANTIMONIDE.

H. Huff, H. Gatos, S. Kawaji, 1966 .

Oxygen Precipitation Behavior in 300 mm Polished Czorchralski Silicon Wafers

G. Rozgonyi, H. Huff, T. Messina, 1999 .

Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

Howard R. Huff, R. Bergmann, Troy C. Messina, 2002 .

Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes

Howard R. Huff, Byoung Hun Lee, G. Bersuker, 2005 .

Model-based silicon wafer criteria for optimal integrated circuit performance

Howard R. Huff, Syd R. Wilson, S. R. Wilson, 1998 .

MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-κ GATE STACKS

Byoung Hun Lee, Gennadi Bersuker, Alexander L. Shluger, 2006 .

Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance

Howard R. Huff, Byoung Hun Lee, Gennadi Bersuker, 2004 .

Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics

G. Lucovsky, Curt A. Richter, H. R. Huff, 1999 .

Physicochemical properties of HfO2 in response to rapid thermal anneal

Howard R. Huff, Gennadi Bersuker, Brendan Foran, 2003 .

From The Lab to The Fab: Transistors to Integrated Circuits

Howard R. Huff, H. Huff, 2003 .

Degradation of thin oxides during electrical stress

Yongjoo Jeon, Howard R. Huff, Gennadi Bersuker, 2001, Microelectron. Reliab..

Integration of high-k gate stack systems into planar CMOS process flows

R. Bergmann, G. Bersuker, P. Zeitzoff, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

Physical characterization of high-k gate dielectric film systems processed by RTA and spike anneal

G. Bersuker, H. Huff, R. Murto, 2002, 10th IEEE International Conference of Advanced Thermal Processing of Semiconductors.

Challenges in Integrating the High-K Gate Dielectric Film to the Conventional Cmos Process Flow

G. Bersuker, R. Bergmann, P. Lysaght, 2001 .

Plastic Deformation in Central Regions of Epitaxial Silicon Slices

H. Huff, L. D. Dyer, W. Boyd, 1971 .

Silicon: Properties and Materials Specifications

H. Huff, 1992 .