C. Cheng

Bulk planar 20nm high-k/metal gate CMOS technology platform for low power and high performance applications

S. Choi, C. Chung, Y. Son, 2011, 2011 International Electron Devices Meeting.

High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate

C. Cheng, J. Long, K.-W. Wang, 1988, IEEE Electron Device Letters.

Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance

L. Coldren, T. Chang, C. Cheng, 1984, IEEE Electron Device Letters.

Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure

L. Coldren, T. Chang, C. Cheng, 1984, IEEE Electron Device Letters.

Submicron self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance

L. Coldren, T. Chang, C. Cheng, 1983, 1983 International Electron Devices Meeting.