N. Zamdmer

发表

ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm2 SRAM cell

T. Adam, T. Standaert, M. Khare, 2011, 2011 Symposium on VLSI Circuits - Digest of Technical Papers.

Impact of the gate-to-body tunneling current on SOI history effect

M. Sherony, G. Shahidi, L. Wagner, 2000, 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).

Controlling floating-body effects for 0.13 /spl mu/m and 0.10 /spl mu/m SOI CMOS

Rajiv V. Joshi, Ching-Te Chuang, P. Oldiges, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

On-chip frequency-domain submillimeter-wave transceiver

K. A. Mcintosh, S. Verghese, N. Zamdmer, 1999 .

Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias

Simon Verghese, K. A. McIntosh, Qing Hu, 1999 .

A low-voltage multi-GHz VCO with 58% tuning range in SOI CMOS

J. Plouchart, Duixian Liu, N. Fong, 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).

A 44GHz differentially tuned VCO with 4GHz tuning range in 0.12 /spl mu/m SOI CMOS

Jonghae Kim, J. Plouchart, N. Zamdmer, 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

INTEGRATED SiGe AND Si DEVICE CAPABILITIES AND TRENDS FOR MULTI-GIGAHERTZ APPLICATIONS

S. Koester, B. Jagannathan, D. Greenberg, 2003 .

A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability

R. Trzcinski, S. Narasimha, N. Zamdmer, 2005, IEEE Transactions on Electron Devices.

Terahertz Electronics

A. Chou, L. Wagner, N. Zamdmer, 2008 .

Amplifier in a 0.12µm SOI CMOS

Jean-Olivier Plouchart, Jonghae Kim, Robert A. Groves, 2004 .

MODE-DISCRIMINATING PHOTOCONDUCTOR AND COPLANAR WAVEGUIDE CIRCUIT FOR PICOSECOND SAMPLING

Simon Verghese, Qing Hu, N. Zamdmer, 1999 .

Theoretical and Experimental Study of a Low-Temperature-Grown GaAs Photoconductive Switch Under High Voltage Bias

S. Verghese, K. McIntosh, N. Zamdmer, 1999 .

A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-/spl mu/m SOI CMOS technology

Jonghae Kim, M. Sherony, J. Plouchart, 2003, ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705).

SOI CMOS SoC Technology With Low-Power mmWave Digital and RF Circuit Capability

Jean-Olivier Plouchart, Jonghae Kim, Lawrence F. Wagner, 2005 .

A 4-91-GHz Traveling-Wave Amplifier in a Standard 0.12- m SOI CMOS Microprocessor Technology

Jean-Olivier Plouchart, Liang-Hung Lu, Jonghae Kim, 2004 .

A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology

J. Plouchart, L. Wagner, Duixian Liu, 2003 .

Application of an SOI

S. Narasimha, N. Lustig, S. Kosonocky, 2003 .

Ti and NiPt/Ti liner silicide contacts for advanced technologies

F. Chafik, S. Jain, N. Loubet, 2016, 2016 IEEE Symposium on VLSI Technology.

An optical correlator using a low‐temperature‐grown GaAs photoconductor

Simon Verghese, Qing Hu, N. Zamdmer, 1996 .

Cryogenic picosecond sampling using fiber-coupled photoconductive switches

Simon Verghese, Qing Hu, N. Zamdmer, 1997 .

Design of wide-band CMOS VCO for multiband wireless LAN applications

Jean-Olivier Plouchart, Duixian Liu, Calvin Plett, 2003, IEEE J. Solid State Circuits.

High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization

G. Northrop, V. Sardesai, S. Narasimha, 2014, 2014 IEEE International Electron Devices Meeting.

Process technology for IBM 14-nm processor designs featuring silicon-on-insulator FinFETs

Paul C. Parries, Giuseppe La Rosa, Scott R. Stiffler, 2018, IBM J. Res. Dev..

Record RF performance of 45-nm SOI CMOS Technology

B. Jagannathan, Jonghae Kim, Sungjae Lee, 2007, 2007 IEEE International Electron Devices Meeting.

High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications

Liang-Hung Lu, M. Sherony, Jonghae Kim, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

Frequency-independent equivalent circuit model for on-chip spiral inductors

Yu Cao, Xuejue Huang, Tsu-Jae King, 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).

A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

Jonghae Kim, R. Trzcinski, S. Narasimha, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

A power-efficient 33 GHz 2:1 static frequency divider in 0.12-/spl mu/m SOI CMOS

Jean-Olivier Plouchart, Jonghae Kim, Yue Tan, 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.