J. Kim

Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

R. Wallace, W. Loh, P. Majhi, 2011, IEEE Electron Device Letters.

In-situ TEM characterization of nanomaterials and devices

Moon J. Kim, J. Kim, S. Park, 2011, 2011 IEEE Nanotechnology Materials and Devices Conference.

Surface characterization of nickel germanides for Schottky source/drain contacts to germanium p-MOSFETs

R. Wallace, D. Gajula, B. Coss, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Physics of electronic transport in low-dimensionality materials for future FETs

S. Aboud, M. Fischetti, Z. Ong, 2015, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).