H. Wakabayashi

发表

Novel Channel-Stress Enhancement Technology with eSiGe S/D and Recessed Channel on Damascene Gate Process

Y. Tagawa, M. Saito, N. Nagashima, 2007, 2007 IEEE Symposium on VLSI Technology.

Extreme High-Performance n- and p-MOSFETs Boosted by Dual-Metal/High-k Gate Damascene Process using Top-Cut Dual Stress Liners on (100) Substrates

Y. Tagawa, M. Saito, N. Nagashima, 2007, 2007 IEEE International Electron Devices Meeting.

Clock distribution networks with on-chip transmission lines

T. Mogami, T. Horiuchi, H. Wakabayashi, 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

45-nm gate length CMOS technology and beyond using steep halo

T. Fukai, H. Wakabayashi, T. Matsuda, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2020, IEEE Transactions on Semiconductor Manufacturing.

Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).

3300V Scaled IGBTs Driven by 5V Gate Voltage

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Modeling and Simulation of Si IGBTs

H. Iwai, T. Saraya, T. Hiramoto, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

H. Iwai, T. Saraya, T. Hiramoto, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Ken Takeuchi, Hiroshi Iwai, Kuniyuki Kakushima, 2018, 2018 IEEE Symposium on VLSI Circuits.

Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

H. Wakabayashi, K. Tsutsui, I. Muneta, 2019, IEEE Journal of the Electron Devices Society.

Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).

Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).

Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

H. Wakabayashi, K. Tsutsui, I. Muneta, 2019, IEEE Journal of the Electron Devices Society.

A possible origin of the large leakage current in ferroelectric Al1−x Sc x N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films

H. Funakubo, H. Wakabayashi, K. Kakushima, 2020, Japanese Journal of Applied Physics.

Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, IEEE Journal of the Electron Devices Society.

Sub-10-nm planar-bulk-CMOS devices using lateral junction control

A. Ogura, H. Wakabayashi, T. Mogami, 2003, IEEE International Electron Devices Meeting 2003.

Progress and prospects of silicon transistors based on junction technologies

H. Wakabayashi, 2013, 2013 13th International Workshop on Junction Technology (IWJT).

Ultralow resistance W/poly-Si gate CMOS technology using amorphous-Si/TiN buffer layer

T. Kunio, K. Yoshida, T. Mogami, 2002 .

Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Vertically-Stacked Nanowire/FinFETs and Following 2D FETs for Logic Chips

H. Wakabayashi, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node

H. Wakabayashi, K. Kakushima, A. Hori, 2020 .

Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates

H. Iwai, H. Wakabayashi, K. Kakushima, 2017 .

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

H. Iwai, W. Saito, H. Wakabayashi, 2016 .

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

H. Iwai, H. Ohashi, H. Wakabayashi, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

H. Iwai, H. Ohashi, H. Wakabayashi, 2018 .

GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

H. Wakabayashi, K. Kakushima, E. Chang, 2022, Japanese Journal of Applied Physics.

Characteristics and Modeling of Sub-10-nm Planar Bulk CMOS Devices Fabricated by Lateral Source/Drain Junction Control

H. Kawaura, H. Wakabayashi, M. Hane, 2006, IEEE Transactions on Electron Devices.

A high-performance 0.1 /spl mu/m CMOS with elevated salicide using novel Si-SEG process

T. Tamura, H. Wakabayashi, K. Tokunaga, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Low-Dimensional-Structure Devices for Future ElectronicsBehaviors

H. Wakabayashi, S. Oda, T. Kawanago, 2018, 2018 International Semiconductor Conference (CAS).

Multilevel Aluminum Dual-Damascene Interconnects for Process-Step Reduction in 0.18 µm ULSIs

Y. Hayashi, H. Wakabayashi, A. Kubo, 1999 .

An ultra-low resistance and thermally stable W/pn-poly-Si gate CMOS technology using Si/TiN buffer layer

T. Yamamoto, T. Kunio, K. Yoshida, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Reaction and formation of La-silicate gate dielectrics on SiC substrates

Sugii, H. Iwai, S. Yamakawa, 2015 .

High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization

H. Wakabayashi, K. Kakushima, T. Hoshii, 2019, IEEE Journal of the Electron Devices Society.

Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, Japanese Journal of Applied Physics.

Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2022, Japanese Journal of Applied Physics.

An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT

H. Iwai, T. Baba, H. Wakabayashi, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure

H. Iwai, N. Sugii, W. Saito, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes

H. Iwai, N. Sugii, W. Saito, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2022, Scientific Reports.

Photovoltaic properties of lateral ultra-thin Si p-i-n structure

H. Iwai, H. Wakabayashi, K. Kakushima, 2018, 2018 China Semiconductor Technology International Conference (CSTIC).

Photovoltaic Characteristics of Ultra-Thin Single Crystalline Silicon Solar Cells

H. Iwai, H. Wakabayashi, K. Kakushima, 2016 .

High Performance and High Reliability Dual Metal CMOS Gate Stacks Using Novel High-k Bi-layer Control Technique

T. Ando, Y. Tagawa, M. Saito, 2007, 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate

H. Wakabayashi, K. Kakushima, T. Yoda, 2022, Japanese Journal of Applied Physics.

Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2022, Japanese Journal of Applied Physics.

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, Japanese Journal of Applied Physics.

Low-resistance self-aligned Ti-silicide technology for sub-quarter micron CMOS devices

T. Kunio, T. Tatsumi, T. Mogami, 1996 .

Enlargement of grain size for MoS2 film fabricated by RF magnetron sputtering with additional DC bias by optimization of deposition parameters and its evaluation with Raman spectroscopy

H. Wakabayashi, A. Ogura, N. Sawamoto, 2020, Japanese Journal of Applied Physics.

Band gap-tuned MoS 2(1− x ) Te 2 x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process

H. Wakabayashi, A. Ogura, N. Sawamoto, 2017 .

Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2

H. Wakabayashi, A. Ogura, N. Sawamoto, 2016 .

Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast

H. Wakabayashi, A. Ogura, N. Sawamoto, 2016 .

Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs

H. Iwai, N. Sugii, A. Nishiyama, 2015 .

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2014, IEEE Transactions on Electron Devices.

Effects of Reaction Conditions on MoS 2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

H. Wakabayashi, A. Ogura, N. Sawamoto, 2017 .

Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography.

T. Matsushita, H. Wakabayashi, K. Kakushima, 2017, Nano letters.

A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

Tohru Mogami, Kiyoshi Takeuchi, H. Wakabayashi, 2001 .

La2O3 gate dielectrics for AlGaN/GaN HEMT

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

Doping Engineering in the MoS2/SnSe2 Heterostructure toward High‐Rejection‐Ratio Solar‐Blind UV Photodetection

H. Wakabayashi, Zhongming Wei, H. Deng, 2022, Advances in Materials.

Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance

H. Funakubo, H. Wakabayashi, K. Kakushima, 2020, 2020 IEEE International Memory Workshop (IMW).

Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

H. Wakabayashi, K. Kakushima, E. Chang, 2021 .

Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2019, Applied Physics Letters.

Investigation on Mo1−xWxS2 fabricated by co-sputtering and post-deposition sulfurization with (t-C4H9)2S2

H. Wakabayashi, A. Ogura, N. Sawamoto, 2018 .

Evaluation of MoS_2 Films Fabricated by Metal-Organic Chemical Vapor Deposition Using a Novel Mo Precursor i-Pr_2DADMo(CO)_3 Under Various Deposition Conditions

H. Wakabayashi, A. Ogura, N. Sawamoto, 2020, MRS Advances.

Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy

N. Nagashima, Y. Tateshita, Y. Kikuchi, 2010 .

Planar Metal–Oxide–Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situ Boron-Doped Selective Silicon Epitaxy

N. Nagashima, Y. Tateshita, Y. Kikuchi, 2010 .

Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films

H. Wakabayashi, K. Kakushima, E. Chang, 2022, Japanese Journal of Applied Physics.

On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021, Japanese Journal of Applied Physics.

Highly Oriented Growth of AlxSc1-X N Ferroelectric Film on W Bottom Electrodes

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, ECS Meeting Abstracts.

Electrical Characterization of Sputter Deposited AlxSc1-XN Thin Films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, ECS Meeting Abstracts.

Sputter-Deposited-MoS2 ${n}$ MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, IEEE Journal of the Electron Devices Society.

Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, Journal of Electronic Materials.

Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2021, IEEE Journal of the Electron Devices Society.

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

H. Wakabayashi, K. Kakushima, T. Hoshii, 2023, IEEE Journal of the Electron Devices Society.

Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness

H. Wakabayashi, A. Ogura, K. Kakushima, 2017 .

On-chip multi-GHz clocking with transmission lines

M. Mizuno, M. Yamashina, T. Horiuchi, 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

W. Saito, H. Wakabayashi, K. Kakushima, 2015 .

Electrical Characterization of Atomic Layer Deposited La2O3 Films on In0.53Ga0.47As Substrates

H. Iwai, N. Sugii, A. Nishiyama, 2013 .

Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration

W. Cao, H. Wakabayashi, A. Ogura, 2019, 2019 19th International Workshop on Junction Technology (IWJT).

Influence of sputtering gas on resistivity of thin Ni silicide films

H. Iwai, N. Sugii, A. Nishiyama, 2015, 2015 China Semiconductor Technology International Conference.

Investigation on MoS_2(1-x)Te_2x Mixture Alloy Fabricated by Co-sputtering Deposition

H. Wakabayashi, A. Ogura, N. Sawamoto, 2017 .

Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy

S. Yamakawa, H. Wakabayashi, S. Mayuzumi, 2010 .

Channel-Stress Enhancement Characteristics for Scaled pMOSFETs by Using Damascene Gate With Top-Cut Compressive Stress Liner and eSiGe

N. Nagashima, Y. Tateshita, S. Yamakawa, 2009, IEEE Transactions on Electron Devices.

Evaluation of Sputtering Deposited 2-Dimensional MoS 2 Film by Raman Spectroscopy

H. Wakabayashi, A. Ogura, N. Sawamoto, 2015 .

Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement

H. Wakabayashi, K. Kakushima, E. Chang, 2021, Japanese Journal of Applied Physics.

ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2021, Japanese Journal of Applied Physics.

Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2021, Japanese Journal of Applied Physics.

High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017 .

Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2

H. Wakabayashi, A. Ogura, N. Sawamoto, 2016 .

Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018 .

Observation of Wake-up Effect on Ferroelectric Y:HfO2 Thickness Scaling

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020 .

Evaluation of Mo(1-x)W x s Alloy Fabricated By Combinatorial Film Deposition

H. Wakabayashi, A. Ogura, K. Ishibashi, 2021, ECS Transactions.

Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures

H. Iwai, W. Saito, H. Wakabayashi, 2014 .

Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2021, Japanese Journal of Applied Physics.

Evaluation of local strain in Si using UV-Raman spectroscopy

H. Wakabayashi, S. Mayuzumi, A. Ogura, 2009 .

Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes With Ideal Interface Characteristics

H. Iwai, H. Wakabayashi, K. Kakushima, 2016, IEEE Electron Device Letters.

Reliability of La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

H. Iwai, N. Sugii, A. Nishiyama, 2013 .

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

Passivation of SiO2/SiC interface with La2O3 capped oxidation

H. Iwai, S. Yamakawa, N. Sugii, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016, Microelectron. Reliab..

Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, Japanese Journal of Applied Physics.

Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration

H. Wakabayashi, A. Ogura, K. Kakushima, 2020, Japanese Journal of Applied Physics.

The Physical and Chemical Properties of MoS_2(1−x)Te_2 x Alloy Synthesized by Co-sputtering and Chalcogenization and Their Dependence on Fabrication Conditions

H. Wakabayashi, A. Ogura, Y. Hashimoto, 2020, MRS Advances.

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

H. Iwai, N. Sugii, A. Nishiyama, 2014 .

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Spintronics Materials and Devices for Working Memory Technology

Tetsuo Endoh, Yasuo Ando, Takahiro Hanyu, 2017 .

A Novel Method for Lightning Prediction by Direct Electric Field Measurements at the Ground Using Recurrent Neural Network

H. Wakabayashi, Shinya Imai, Xiaoqi Deng, 2022, IEICE Trans. Inf. Syst..

High-Performance Metal/High-$k$ n- and p-MOSFETs With Top-Cut Dual Stress Liners Using Gate-Last Damascene Process on (100) Substrates

Y. Tateshita, N. Nagashima, H. Wakabayashi, 2009, IEEE Transactions on Electron Devices.

Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement

H. Wakabayashi, K. Kakushima, T. Hoshii, 2024, Japanese Journal of Applied Physics.

Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment

T. Ando, M. Saito, N. Nagashima, 2008 .