S. Kadomura
发表
Y. Tagawa,
M. Saito,
N. Nagashima,
2007,
2007 IEEE Symposium on VLSI Technology.
Y. Tagawa,
M. Saito,
N. Nagashima,
2007,
2007 IEEE International Electron Devices Meeting.
S. Kadomura,
A. Suzuki,
K. Tabuchi,
2002,
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
M. Saito,
T. Hirano,
S. Kadomura,
2003
.
Hiroshi Kudo,
Naoki Nagashima,
Ikuhiro Yamamura,
2000,
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
S. Kadomura,
S. Samukawa,
T. Kubota,
2009
.
S. Kadomura,
S. Samukawa,
H. Yano,
2009
.
S. Kadomura,
S. Samukawa,
H. Yano,
2010
.
S. Kadomura,
N. Komai,
T. Tatsumi,
1999,
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
S. Kadomura,
G. Dixit,
B. Zheng,
2001,
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
S. Takahashi,
Y. Enomoto,
S. Kadomura,
2004,
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
T. Ando,
Y. Tagawa,
M. Saito,
2007,
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
S. Kadomura,
S. Samukawa,
Y. Ichihashi,
2007
.
Heiji Watanabe,
H. Iwamoto,
S. Kadomura,
2008
.
Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping
Heiji Watanabe,
H. Iwamoto,
S. Kadomura,
2008
.
Heiji Watanabe,
H. Iwamoto,
S. Kadomura,
2007
.
Heiji Watanabe,
Y. Miyanami,
H. Iwamoto,
2007
.
Heiji Watanabe,
Y. Miyanami,
H. Iwamoto,
2007
.
Heiji Watanabe,
H. Iwamoto,
S. Kadomura,
2008
.
Heiji Watanabe,
H. Iwamoto,
S. Kadomura,
2008
.
R. Katsumata,
T. Ando,
T. Hirano,
2006
.
T. Ando,
Heiji Watanabe,
T. Hirano,
2010
.
T. Ando,
Heiji Watanabe,
T. Hirano,
2009
.
T. Ando,
Y. Tagawa,
M. Saito,
2006,
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..