G. Wilk

发表

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

P. Ye, Y. Xuan, H. Lin, 2006 .

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

J. Kwo, K. Ng, J. Bude, 2003, IEEE Electron Device Letters.

High-κ gate dielectrics: Current status and materials properties considerations

R. Wallace, G. Wilk, J. Anthony, 2001 .

ELECTRICAL PROPERTIES OF HAFNIUM SILICATE GATE DIELECTRICS DEPOSITED DIRECTLY ON SILICON

Robert M. Wallace, Glen D. Wilk, R. Wallace, 1999 .

Hafnium and zirconium silicates for advanced gate dielectrics

R. Wallace, G. Wilk, J. Anthony, 2000 .

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

D. Muller, J. Grazul, P. Kalavade, 2001 .

Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation

D. Muller, P. McIntyre, S. Ramanathan, 2001 .

Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics

D. Muller, P. McIntyre, S. Ramanathan, 2001 .

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Peide D. Ye, J. P. Mannaerts, J. Bude, 2003 .

HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

David A. Muller, Martin M. Frank, Dmitri Starodub, 2005 .

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

G.A. Brown, A. Chatterjee, M. Rodder, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Materials Issues for High-k Gate Dielectric Selection and Integration

R. Wallace, G. Wilk, 2005 .

28V planar GaAs MESFETs for wireless base-station power amplifiers

J. Bude, P. Ye, G. Wilk, 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

Low Temperature CVD of Crystalline Titanium Dioxide Films Using Tetranitratotitanium(IV

Jeffrey T. Roberts, D. Gilmer, S. Campbell, 1998 .

Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

Jeffrey T. Roberts, D. Gilmer, S. Campbell, 1997 .

Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films

Jeffrey T. Roberts, D. Gilmer, S. Campbell, 1999 .

High-κ Dielectric Materials for Microelectronics

Robert M. Wallace, Glen D. Wilk, R. Wallace, 2003 .

Stable zirconium silicate gate dielectrics deposited directly on silicon

Robert M. Wallace, Glen D. Wilk, R. Wallace, 2000 .

Thermal decomposition behavior of the HfO2/SiO2/Si system

G. Wilk, E. Garfunkel, T. Gustafsson, 2003 .

Chemical vapor deposition of HfO2 films on Si(100)

G. Wilk, S. Aravamudhan, E. Garfunkel, 2002 .

Low‐temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au

G. Wilk, F. Spaepen, J. Golovchenko, 1994 .

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Peide D. Ye, James C. M. Hwang, J. Bude, 2005 .

Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

Peide D. Ye, Glen D. Wilk, H. C. Lin, 2005 .

SiO2 film thickness metrology by x-ray photoelectron spectroscopy

Robert M. Wallace, Leonard C. Feldman, Glen D. Wilk, 1997 .

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Wilfried Vandervorst, Martin A. Green, David A. Muller, 2002 .

Alternative Gate Dielectrics for Microelectronics

R. Wallace, G. Wilk, 2002 .

In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature

R. Wallace, G. Wilk, H. Edwards, 1997 .

Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge

R. V. Dover, R. Opila, G. Wilk, 2002 .

Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics

D. Muller, G. Wilk, 2001 .

50 nm Vertical Replacement-Gate (VRG) pMOSFETs

T. Nigam, James D. Plummer, J. F. Miner, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

Martin L. Green, W. H. Lin, D. Muller, 2003 .

In Situ Spectroscopic Approach to Atomic Layer Deposition

Y. Chabal, G. Wilk, MM Frank, 2002 .

Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Martin M. Frank, Annelies Delabie, Bert Brijs, 2003 .

Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition

K. Ng, J. Bude, P. Ye, 2005 .

Atomic Layer Deposition of Hafnium Silicate from HfCl4, SiCl4, and H2O

J. Swerts, E. Tois, A. Delabie, 2007 .

Direct extraction of the electron tunneling effective mass in ultrathin SiO2

B. Brar, Alan Seabaugh, Glen D. Wilk, 1996 .

Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

J. J. Wang, P. Ye, E. Tois, 2005 .

Thermal stability of coevaporated Al-Pt thin films on GaAs substrates

B. Blanpain, G. Wilk, J. Mayer, 1990 .

Thermal Stability of a1-pt Thin Films/Gaas for Self-Aligning Gate Contacts

B. Blanpain, G. Wilk, J. Mayer, 1990 .

Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature

G. Wilk, B. Brar, 1999, IEEE Electron Device Letters.

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

J. Kwo, K. Ng, J. Bude, 2004 .

Multi-component high-K gate dielectrics for the silicon industry

Fred P. Klemens, Martin L. Green, Glen D. Wilk, 2001 .

Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs

Peide D. Ye, Glen D. Wilk, H. C. Lin, 2006 .

Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

Peide D. Ye, Glen D. Wilk, M. M. Frank, 2007 .

Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs

P. Ye, Yanqing Wu, G. Wilk, 2007 .

Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides

Martin M. Frank, Glen D. Wilk, Yves J. Chabal, 2003 .

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

P. Ye, Yanqing Wu, G. Wilk, 2006 .

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

Hao Gong, Alex See, Martin L. Green, 2002 .

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures

P. Ye, Yanqing Wu, G. Wilk, 2007 .

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

J. Kwo, K. Ng, J. Bude, 2004 .

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics

T. Nigam, A. Kornblit, M.R. Baker, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

Glen D. Wilk, Dina H. Triyoso, D. Werho, 2007 .

Impact of Hf-Precursor Choice on Scaling and Performance of High-k Gate Dielectrics

J. Swerts, L. Ragnarsson, A. Delabie, 2007 .

(Invited) Current Status of High-k and Metal Gates in CMOS

J. Maes, G. Wilk, M. Verghese, 2012 .

Electrical characterization of ultrathin atomic-layer-deposited Al/sub 2/O/sub 3/ on GaAs

P. Ye, H. Lin, G. Wilk, 2005, 2005 International Semiconductor Device Research Symposium.

Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing

E. Deloffre, J. Swerts, M. Gros-Jean, 2007, 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

P. Ye, G. Wilk, H. Lin, 2006 .

Effect of substrate miscut on low-temperature homoepitaxial growth on Si(111) mediated by overlayers of Au: Evidence of step flow

G. Wilk, F. Spaepen, J. Golovchenko, 1997 .

Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition

David A. Muller, Glen D. Wilk, D. Muller, 2003 .

Magnetic Properties of Atomic-Layer-Deposited Hafnium Dioxide

P. Ye, S. von Molnár, P. Xiong, 2005, International Semiconductor Device Research Symposium.

Electronic properties of partially crystalline SiOx suboxide films

G. Wilk, B. Brar, 2000, IEEE Electron Device Letters.