A. Talbot

50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process

T. Skotnicki, D. Dutartre, P. Ribot, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Applications of SiGe Material for CMOS and Related Processing

T. Skotnicki, D. Dutartre, S. Monfray, 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

Bibliographie de l’auteur

D. Dutartre, S. Monfray, N. Loubet, 2014, Un nouveau référentiel pour la culture ?.

Silicon Etching Study in a RT-CVD Reactor with the HCl/H2 Gas Mixture

D. Dutartre, N. Loubet, A. Talbot, 2006 .

Si–SiGe(C) Epitaxy by RTCVD

D. Dutartre, C. Fellous, A. Talbot, 2005 .

Emerging silicon-on-nothing (SON) devices technology

Stephane Monfray, T. Skotnicki, D. Chanemougame, 2004 .

Silicon on nothing MEMS electromechanical resonator

Pascal Ancey, Lionel Buchaillot, Fabrice Casset, 2008, ArXiv.

First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance

M. Haond, T. Skotnicki, S. Monfray, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Highly-performant 38 nm SON (silicon-on-nothing) P-MOSFETs with 9 nm-thick channels

M. Haond, T. Skotnicki, S. Monfray, 2002, 2002 IEEE International SOI Conference.

Low Thermal Budget Activation of B in Si

D. Dutartre, A. Talbot, O. Marcelot, 2006, 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors.