G. Xia

发表

Strained silicon MOSFET technology

H. Nayfeh, D. Antoniadis, E. Fitzgerald, 2002, Digest. International Electron Devices Meeting,.

On implementation of embedded phosphorus-doped SiC stressors in SOI nMOSFETs

T. Adam, L. Black, R. Pal, 2008, 2008 Symposium on VLSI Technology.

On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

Osbert Cheng, Ann-Kuo Chu, Guangrui Xia, 2010, IEEE Electron Device Letters.

Analysis of Amorphous-to-crystalline Germanium Stack with Cs-corrected Analytical STEM

C. S. Tan, G. Xia, D. Anjum, 2017, Microscopy and Microanalysis.

A new wet etching method for black phosphorus layer number engineering: experiment, modeling and DFT simulations

K. Kavanagh, Hongyu Yu, G. Xia, 2019, 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C

M. Schiekofer, G. Xia, H. Yasuda, 2016, Journal of Materials Science.

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

G. Xia, 2018, 1809.09985.

Stress Engineering With Silicon Nitride Stressors for Ge-on-Si Lasers

L. Chrostowski, G. Xia, Jiaxin Ke, 2016, IEEE Photonics Journal.

Study of Near-Surface Stresses in Silicon Around Through-Silicon Vias at Elevated Temperatures by Raman Spectroscopy and Simulations

Chuan Seng Tan, Jiye Zhang, Guangrui Xia, 2015, IEEE Transactions on Device and Materials Reliability.

Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping

L. Chrostowski, W. Shi, Ting‐Chang Chang, 2016, 1601.04108.

Enhanced Si–Ge interdiffusion in high phosphorus-doped germanium on silicon

C. S. Tan, G. Xia, Yew Heng Tan, 2015 .

Thermal sublimation: a scalable and controllable thinning method for the fabrication of few-layer black phosphorus

G. Xia, Wenjuan Zhu, Jialun Liu, 2016, Nanotechnology.

Design considerations of biaxially tensile-strained germanium-on-silicon lasers

L. Chrostowski, G. Xia, Simon C. Li, 2015, 1511.05972.

Integration of Low-κ Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief

C. S. Tan, C. Tan, Jiye Zhang, 2012 .

Modeling of the reverse gate leakage current of AlGaN/GaN HEMTs

G. Xia, Simon C. Li, Yue Fu, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Fabrication and the Interlayer Coupling Effect of Twisted Stacked Black Phosphorus for Optical Applications

G. Xia, P. Servati, Teren Liu, 2019, ACS Applied Nano Materials.

Interdiffusion in Group IV Semiconductor Material Systems: Applications, Methods and Discoveries

G. Xia, 2019, 1901.10105.

Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries.

G. Xia, 2019, Science bulletin.

Theoretical study of small signal modulation behavior of Fabry-Perot germanium-on-silicon lasers

G. Xia, Ying Zhu, Zhiqiang Li, 2022, Physica Scripta.

Stress Engineering With Silicon Nitride Stressors for Ge-on-Si Lasers

L. Chrostowski, G. Xia, Jiaxin Ke, 2016, IEEE Photonics Journal.

Corrigendum: Design considerations of biaxially tensile-strained germanium-on-silicon lasers (2016 Semiconductor Science and Technology 31 065015)

G. Xia, Xiyue Li, 2016 .

Silicon-Germanium interdiffusion and its impacts on enhanced mobility MOSFETs

G. Xia, 2006 .

The Stability of Exfolicated FeSe Nanosheets During in-air Device Fabrication Processes

G. Xia, D. Bonn, Weijun Luo, 2018, IEEE Transactions on Nanotechnology.

Interlayer coupling effect in twisted stacked few layer black phosphorus revealed by abnormal blue shifts in Raman spectra

G. Xia, P. Servati, Teren Liu, 2018, 1805.01135.

The dependence of the crystalline volume fraction on the crystallite size for hydrogenated nanocrystalline silicon based solar cells

S. O’Leary, G. Xia, K. Schmidt, 2013 .

Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation

David D. Tuschel, G. Xia, Guangnan Zhou, 2016, 1610.03382.

Characterization of Ultrathin Strained-Si Channel Layers of n-MOSFETs Using Transmission Electron Microscopy

J. Hoyt, G. Xia, D. Anjum, 2005 .

Generation and properties of bulk a-ZrO2 by molecular dynamics simulations with a reactive force field

C. Grecu, A. Ivanov, G. Xia, 2015 .

Coupled dopant diffusion and segregation in inhomogeneous SiGe alloys: Experiments and modeling

M. Schiekofer, G. Xia, H. Yasuda, 2015 .

Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging

J. Hoyt, G. Xia, D. Anjum, 2005 .

Atomistic simulation of radiation damage to carbon nanotube

G. Xia, Zonggang Chen, F. Cui, 2002 .

Hydrogen diffusion in amorphous ZrO2

C. Grecu, A. Ivanov, G. Xia, 2016 .

Design of a 1550nm SiGe/Si quantum-well optical modulator

Nicolas A. F. Jaeger, Lukas Chrostowski, Nicolas Rouger, 2010, Photonics North.

Thermally induced surface faceting on heteroepitaxial layers

G. Xia, Yiwen Zhang, Chuan Zhou, 2023, Journal of Applied Physics.

On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures

J. Hoyt, P. Mooney, G. Xia, 2013 .

Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

P. Mooney, G. Xia, D. Anjum, 2014 .

Synthesis of large-scale 2-D MoS2 atomic layers by hydrogen-free and promoter-free chemical vapor deposition

C. Raymond, G. Xia, Chih-Fang Huang, 2016 .

Stress and thermal characterization of 4H-SiC microelectromechanical structures

K. Cheong, G. Xia, Ting-Fu Chang, 2017 .

A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range

G. Xia, Simon C. Li, Yiheng Lin, 2012 .

On the origins of near-surface stresses in silicon around Cu-filled and CNT-filled through silicon vias

C. S. Tan, G. Xia, Hong Yu Li, 2016, 1601.04107.

Orientation of pentacene films using surface alignment layers and its influence on thin-film transistor characteristics

George G. Malliaras, Randall L. Headrick, Ranganathan Shashidhar, 2001 .

Investigation of mechanisms and influencing processing factors on mobility enhancement in strained Si n-MOSFETs

G. Xia, 2003 .

Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs

M. Chan, Hongyu Yu, G. Xia, 2019, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

L. Chrostowski, C. Wu, G. Xia, 2021, Optical Materials Express.

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

C. S. Tan, Jifeng Liu, G. Xia, 2019, Optical Materials Express.

Si–Ge interdiffusion under oxidizing conditions in epitaxial SiGe heterostructures with high compressive stress

J. Hoyt, G. Xia, 2010 .

Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

Judy L. Hoyt, Guangrui Xia, Michael Canonico, 2007 .

Study of Si-Ge interdiffusion with phosphorus doping

G. Xia, Xixiang Zhang, D. Anjum, 2016, 1608.01029.

Interdiffusion in strained Si/strained SiGe epitaxial heterostructures

J. Hoyt, G. Xia, M. Canonico, 2006 .