B. Yang

发表

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

J. Kwo, K. Ng, J. Bude, 2003, IEEE Electron Device Letters.

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Peide D. Ye, J. P. Mannaerts, J. Bude, 2003 .

28V planar GaAs MESFETs for wireless base-station power amplifiers

J. Bude, P. Ye, G. Wilk, 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2−x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs

Y. J. Lee, Y. D. Wu, J. Kwo, 2004 .

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Peide D. Ye, James C. M. Hwang, J. Bude, 2005 .

Advances in high κ gate dielectrics for Si and III-V semiconductors

D. Muller, J. Kwo, K. Ng, 2003 .

Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition

K. Ng, J. Bude, P. Ye, 2005 .

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

J. Kwo, K. Ng, J. Bude, 2004 .

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

Peide D. Ye, J. P. Mannaerts, J. Bude, 2003 .

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

P. Ye, Yanqing Wu, G. Wilk, 2006 .

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

J. Kwo, K. Ng, J. Bude, 2004 .