M. Frei

发表

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

J. Kwo, K. Ng, J. Bude, 2003, IEEE Electron Device Letters.

On the Nature of Shunt Leakage in Amorphous Silicon p-i-n Solar Cells

Souvik Mahapatra, Sourabh Dongaonkar, Michel Frei, 2010, IEEE Electron Device Letters.

Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation

F. Ren, S. Pearton, C. Abernathy, 2002 .

Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation

C. Fiegna, E. Sangiorgi, P. Magnone, 2013, IEEE Journal of Photovoltaics.

Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

M. Mastrapasqua, S. Moinian, T.-I. Hsu, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Minimizing thermal resistance and collector-to-substrate capacitance in SiGe BiCMOS on SOI

P. Palestri, W. Lin, A. Pacelli, 2002, IEEE Electron Device Letters.

Studies on the selective OMVPE of (Ga,In)/(As,P)

C. Caneau, R. Bhat, M. Frei, 1992 .

Identification, characterization, and implications of shadow degradation in thin film solar cells

Souvik Mahapatra, Sourabh Dongaonkar, Michel Frei, 2011, 2011 International Reliability Physics Symposium.

Modeling of correlated noise in RF bipolar devices

R. Booth, M. Frei, S. Martin, 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

Two‐dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth

D. Tsui, M. Frei, 1989 .

28V planar GaAs MESFETs for wireless base-station power amplifiers

J. Bude, P. Ye, G. Wilk, 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

Intrinisic reliability of amorphous silicon thin film solar cells

S. Mahapatra, M. A. Alam, S. Dongaonkar, 2010, 2010 IEEE International Reliability Physics Symposium.

Nanotechnology Center 2011 Identification , Characterization , and Implications of Shadow Degradation in Thin Film Solar Cells

Dapeng Wang, S. Mahapatra, M. Alam, 2014 .

Electronic properties of In0.53Ga0.47As‐InP single quantum wells grown by chemical beam epitaxy

D. Tsui, W. Tsang, M. Frei, 1987 .

Hot electron electroluminescence in AlGaAs/GaAs heterostructures

M. Frei, S. Lyon, C. L. Petersen, 1989 .

Selective growth of InGaAs/InP heterojunction bipolar transistors with a buried subcollector

C. Caneau, J. Hayes, M. Frei, 1992 .

Selective OMVPE of GaInAs and InP using a polycrystalline InP mask

W. Bonner, C. Caneau, R. Bhat, 1991 .

Self-aligned InAlAs/InGaAs heterojunction bipolar transistor with a buried subcollector grown by selective epitaxy

J. Hayes, M. Frei, Jong-In Song, 1994, IEEE Electron Device Letters.

Simultaneous Planarized Selective-Area Epitaxy of Ga x In 1-x As in Normal and Dove-tail Etched Grooves

C. Caneau, M. Frei, D. Bimberg, 1993 .

Regrowth of In0.53Ga0.47As/InP p‐n heterojunctions by organometallic chemical vapor deposition

C. Caneau, J. Hayes, M. Frei, 1991 .

In situ definition of semiconductor structures by selective area growth and etching

Catherine Caneau, E. Colas, W. E. Quinn, 1991 .

Rigorous optical modeling and optimization of thin‐film photovoltaic cells with textured transparent conductive oxides

M. Agrawal, M. Frei, 2012 .

Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations

D. Tonini, G. Cellere, C. Fiegna, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

Electronic and thermal properties of GeTe/Sb2Te3 superlattices by ab initio approach: Impact of Van der Waals gaps on vertical lattice thermal conductivity

B. Sklénard, M. Frei, F. Triozon, 2021, Applied Physics Letters.

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

Peide D. Ye, J. P. Mannaerts, J. Bude, 2003 .

Numerical Simulation on the Influence of Via and Rear Emitters in MWT Solar Cells

Enrico Sangiorgi, Paolo Magnone, Claudio Fiegna, 2014, IEEE Journal of Photovoltaics.

2-D numerical simulation and modeling of monocrystalline selective emitter solar cells

C. Fiegna, E. Sangiorgi, M. Agrawal, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Highly Sb-Rich Ge-Sb-Te Engineering in 4Kb Phase-Change Memory for High Speed and High Material Stability Under Cycling

M. Bernard, O. Cueto, M. Pakala, 2019, 2019 IEEE 11th International Memory Workshop (IMW).

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

J. Kwo, K. Ng, J. Bude, 2004 .

2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance

D. Tonini, G. Cellere, C. Fiegna, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

A comparative study of MWT architectures by means of numerical simulations

Paolo Magnone, Marco Lanuzza, Felice Crupi, 2013 .

Integration of high-Q inductors in a latch-up resistant CMOS technology

M.R. Pinto, M.R. Frei, N.R. Belk, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).