S. Su

发表

High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

Y. Yeo, G. Han, S. Su, 2011, 2011 International Electron Devices Meeting.

Electroluminescence from Ge on Si substrate at room temperature

Liping Luo, S. Su, B. Cheng, 2009 .

Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Kain Lu Low, Y. Yeo, G. Han, 2012, 2012 International Electron Devices Meeting.

Fabrication and Negative Bias Temperature Instability (NBTI) Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation and HfO2 High-k and TaN Metal Gate

Y. Yeo, W. Wang, B. Liu, 2013 .

Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy

S. Su, B. Cheng, Dongliang Zhang, 2013 .

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

Y. Yeo, D. Antoniadis, G. Han, 2013, IEEE Electron Device Letters.

The contributions of composition and strain to the phonon shift in Ge1―xSnx alloys

S. Su, B. Cheng, C. Xue, 2011 .

Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates

Wei Wang, Qiming Wang, Chunlai Xue, 2011 .

Strain status of epitaxial Ge film on a Si (001) substrate

S. Su, B. Cheng, W. Qiu, 2016 .

GeSn near infrared photodetectors

S. Su, B. Cheng, Dongliang Zhang, 2013 .

Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

Y. Yeo, G. Han, S. Su, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

BF2+ ion implantation and dopant activation in strained Germanium-tin (Ge1−xSnx) epitaxial layer

Y. Yeo, G. Han, S. Su, 2012, 2012 12th International Workshop on Junction Technology.

GeSn on Si photodetectors grown by molecular beam epitaxy

S. Su, B. Cheng, C. Xue, 2011, 8th IEEE International Conference on Group IV Photonics.

The optical properties of ZnO/ZnMgO single quantum well grown by P-MBE

B. Yao, D. Shen, S. Su, 2008 .

Growth ambient dependent electrical properties of lithium and nitrogen dual-doped ZnO films prepared by radio-frequency magnetron sputtering

Hai Zhu, B. Yao, S. Su, 2010 .

Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing

Wei Wang, S. Su, B. Cheng, 2011 .

Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate

S. Su, B. Cheng, Guijiang Lin, 2012 .

Spontaneous and stimulated emission of ZnO/Zn0.85Mg 0.15O asymmetric double quantum wells

S. Su, G. Xing, Y. M. Lu, 2010 .

Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE

Zikang Tang, Duan Zhao, B. Yao, 2007 .

GeSn p-i-n photodetector for all telecommunication bands detection.

Qiming Wang, Wei Wang, Chunlai Xue, 2011, Optics express.

Oxygen flux influence on the morphological, structural and optical properties of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

B. Yao, Duan Zhao, D. Shen, 2008 .

Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy

C. Shan, B. Yao, Duan Zhao, 2008 .

Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping.

S. Su, B. Cheng, Chuanbo Li, 2012, Optics express.

High-responsivity GeSn short-wave infrared p-i-n photodetectors

Qiming Wang, Chunlai Xue, Buwen Cheng, 2013 .

Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

S. Su, B. Cheng, C. Xue, 2011 .

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

S. Su, B. Cheng, Chunwang Zhao, 2013, Materials.

Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis

S. Su, B. Cheng, Chunwang Zhao, 2012 .

Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Y. Yeo, G. Han, S. Su, 2013 .

Dopant Segregation and Nickel Stanogermanide Contact Formation on $\hbox{p}^{+} \hbox{Ge}_{0.947}\hbox{Sn}_{0.053}$ Source/Drain

Y. Yeo, G. Han, S. Su, 2012, IEEE Electron Device Letters.

Thermally Stable Multi-Phase Nickel-Platinum Stanogermanide Contacts for Germanium-Tin Channel MOSFETs

B. Liu, Y. Yeo, G. Han, 2012 .

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature

S. Su, B. Cheng, Chuanbo Li, 2012, Nanoscale Research Letters.

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Y. Yeo, W. Wang, B. Liu, 2013, IEEE Transactions on Electron Devices.

Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\circ} \hbox{C}$ Rapid Thermal Anneal

Y. Yeo, W. Wang, B. Liu, 2012, IEEE Electron Device Letters.

Dopant Segregation and Nickel Stanogermanide Contact Formation on Source/Drain

Y. Yeo, G. Han, S. Su, 2012 .

Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy

B. Yao, Duan Zhao, D. Shen, 2008 .

Strained and strain-relaxed epitaxial Ge 1- x Sn x alloys on Si(100) substrates

S. Su, B. Cheng, Y. Zuo, 2011 .

High quality epitaxial Ge1−xSnx alloy films on Si with a Ge buffer by molecular beam epitaxy with combined sources

S. Su, B. Cheng, Y. Zuo, 2010, 7th IEEE International Conference on Group IV Photonics.

Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

Bin Liu, Ran Cheng, Xiao Gong, 2013, 2013 Symposium on VLSI Technology.