B. Cheng

B. Cheng, Y. Zuo, Zhi Liu, 2020, 2020 Asia Communications and Photonics Conference (ACP) and International Conference on Information Photonics and Optical Communications (IPOC).

Recent progress in GeSn growth and GeSn-based photonic devices

B. Cheng, Chuanbo Li, C. Xue, 2018, Journal of Semiconductors.

Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy

S. Su, B. Cheng, Dongliang Zhang, 2013 .

Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

B. Cheng, Y. Zuo, Chuanbo Li, 2019, Nanoscale Research Letters.

Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing

Zhiyong Li, B. Cheng, Cheng Li, 2019, IEEE Transactions on Electron Devices.

Metal catalysis-free, direction-controlled planar growth of single-crystalline α-Si3N4 nanowires on Si(100) substrate

Jifeng Liu, B. Cheng, Qiming Wang, 2006 .

High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling

B. Cheng, C. Xue, Y. Zuo, 2020, IEEE Photonics Technology Letters.

Enhanced photoluminescence from porous silicon nanowire arrays

B. Cheng, Chuanbo Li, C. Xue, 2013, Nanoscale Research Letters.

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

Y. Yeo, D. Antoniadis, G. Han, 2013, IEEE Electron Device Letters.

The band structure and optical gain of a new IV-group alloy GePb: A first-principles calculation

B. Cheng, C. Xue, Hong Yang, 2017 .

Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA+U approach

B. Cheng, C. Xue, Zhi Liu, 2015 .

Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration

B. Cheng, Chuanbo Li, C. Xue, 2014 .

The contributions of composition and strain to the phonon shift in Ge1―xSnx alloys

S. Su, B. Cheng, C. Xue, 2011 .

Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals

B. Cheng, Chuanbo Li, C. Xue, 2018, The Journal of Physical Chemistry C.

Theoretical study of the bandgap regulation of a two-dimensional GeSn alloy under biaxial strain and uniaxial strain along the armchair direction.

B. Cheng, C. Xue, Wenqi Huang, 2018, Physical chemistry chemical physics : PCCP.

Theoretical study of the band structure for multilayer germanane under external strain

B. Cheng, C. Xue, Wenqi Huang, 2018, Journal of Physics D: Applied Physics.

Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

B. Cheng, C. Xue, Qiming Wang, 2014 .

Effect of chloride Ion concentrations on luminescence peak blue shift of light-emitting diode using anti-solvent extraction of quasi-two-dimensional perovskite

B. Cheng, Dan Chen, Xiaoping Zou, 2021, Tsinghua Science and Technology.

Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes

B. Cheng, Y. Zuo, Qiming Wang, 2018, Nanoscale Research Letters.

A Si-based tunable narrow-band flat-top filter with multiple-step-type Fabry-Perot cavity structure

Xinwei Shi, B. Cheng, Y. Zuo, 2005, IEEE Photonics Technology Letters.

Drop-casting CsPbBr3 perovskite quantum dots as down-shifting layer enhancing the ultraviolet response of silicon avalanche photodiode

T. Liu, B. Cheng, Y. Zuo, 2021, Applied Physics Letters.

Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates

Wei Wang, Qiming Wang, Chunlai Xue, 2011 .

Epitaxial growth and characterization of Ge1--Sn Pb ternary alloys

B. Cheng, C. Xue, Y. Zuo, 2020 .

Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy

B. Cheng, C. Xue, Y. Zuo, 2019, Journal of Alloys and Compounds.

Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications

B. Cheng, Chuanbo Li, C. Xue, 2017 .

Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method

B. Cheng, H. Cong, D. Zhang, 2016, 2016 IEEE 13th International Conference on Group IV Photonics (GFP).

Influence of H2 on strain evolution of high-Sn-content Ge1−xSnx alloys

B. Cheng, Chuanbo Li, C. Xue, 2016, Journal of Materials Science.

Strain status of epitaxial Ge film on a Si (001) substrate

S. Su, B. Cheng, W. Qiu, 2016 .

Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering

B. Cheng, Y. Zuo, Qiming Wang, 2015 .

Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility

G. Han, B. Cheng, Yan Liu, 2015 .

Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy

B. Cheng, Dongliang Zhang, Junying Zhang, 2015 .

GeSn near infrared photodetectors

S. Su, B. Cheng, Dongliang Zhang, 2013 .

Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

Y. Yeo, G. Han, S. Su, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

BF2+ ion implantation and dopant activation in strained Germanium-tin (Ge1−xSnx) epitaxial layer

Y. Yeo, G. Han, S. Su, 2012, 2012 12th International Workshop on Junction Technology.

GeSn on Si photodetectors grown by molecular beam epitaxy

S. Su, B. Cheng, C. Xue, 2011, 8th IEEE International Conference on Group IV Photonics.

Long-wavelength Si-based MQW photodetectors for application in optical fiber communication

Yuqing Zhu, Jinzhong Yu, Qiming Wang, 2001, SPIE/OSA/IEEE Asia Communications and Photonics.

Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

Hongjie Wang, B. Cheng, Qiming Wang, 2000 .

Enhanced effect of 1,2-dichlorobenzene on the property of PC61BM and perovskite films for planar heterojunction perovskite solar cells

B. Cheng, Y. Zuo, Jun Zheng, 2020 .

Novel room temperature photoluminescence of Ge/Si islands in multilayer structure grown on silicon-on-insulator substrate

Qiyuan Wang, B. Cheng, J. Z. Yu, 2004 .

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

B. Cheng, C. Xue, Wuming Liu, 2015, Scientific Reports.

Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix

B. Cheng, W. Ge, Qiming Wang, 2005 .

Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate

B. Cheng, C. Xue, Y. Zuo, 2011 .

Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth

B. Cheng, Chuanbo Li, C. Xue, 2015 .

Hedgehog-like polycrystalline Si as anode material for high performance Li-ion battery

B. Cheng, Kaixue Wang, Fei-Hu Du, 2014 .

Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure

B. Cheng, Y. Zuo, Chaofan Xue, 2011 .

Role of Bi3+ ions for Er3+ ions efficient 1.54 μm light emission in Er/Bi codoped SiO2 thin film prepared by sol–gel method

B. Cheng, J. Z. Yu, C. Xue, 2010 .

Intense 974 nm emission from ErxYb2−xSi2O7 films through efficient energy transfer up-conversion from Er3+ to Yb3+ for Si solar cell

B. Cheng, Zhihua Ma, Y. Zuo, 2012 .

Optical properties of ErxYb2−xSi2O7 thin film grown by RF magnetron sputtering method

B. Cheng, Zhihua Ma, C. Xue, 2010, 7th IEEE International Conference on Group IV Photonics.

Transport mechanism of novel silicon-riched nitride (SRN)/ silicon-riched oxide (SRO) superlattice quantum dot structure

B. Cheng, Q. Cao, C. Xue, 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs

B. Cheng, C. Xue, Y. Zuo, 2020 .

Effect of titanium doping on conductivity, density of states and conduction mechanism in ZnO thin film

B. Cheng, Chuanbo Li, M. Rafiq, 2019, Applied Physics A.

Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers

Qiyuan Wang, B. Cheng, J. Z. Yu, 2000 .

Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method

B. Cheng, Qingyun Liu, Chuanbo Li, 2018, Journal of Alloys and Compounds.

Research of high performance GeSn/Ge heterostructure photodiodes

B. Cheng, Chuanbo Li, C. Xue, 2015, 2015 Optoelectronics Global Conference (OGC).

Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure

B. Cheng, C. Xue, Y. Zuo, 2021, Journal of Physics D: Applied Physics.

GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design

Qiang Wu, B. Cheng, Jun Zheng, 2020, Japanese Journal of Applied Physics.

Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy.

J. Harris, B. Cheng, Chuanbo Li, 2017, Optics letters.

Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain

Y. Hao, G. Han, B. Cheng, 2015 .

P+-Ge1−xSnx / p−-Ge1−x−ySixSny / n-Ge1−x−ySixSny NTFET analysis and the realization of n-Ge1−x−ySixSny ohmic contact

B. Cheng, Chuanbo Li, C. Xue, 2016, 2016 16th International Workshop on Junction Technology (IWJT).

Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation

B. Cheng, Chuanbo Li, C. Xue, 2015 .

Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth

B. Cheng, C. Xue, Y. Zuo, 2015 .

Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth

B. Cheng, Chuanbo Li, C. Xue, 2013 .

Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers

B. Cheng, Y. Zuo, Zhi Liu, 2022, Tsinghua Science and Technology.

Hierarchical mesoporous nanoflowers of Zn2VO4 for high capacity anode in lithium ion batteries

B. Cheng, Junying Zhang, Zeeshan Tariq, 2020 .

Germanium lead alloy on insulator grown by rapid melting growth

B. Cheng, C. Xue, Y. Zuo, 2021 .

Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth

B. Cheng, Chuanbo Li, C. Xue, 2015 .

A new 3-dB bandwidth record of Ge photodiode on Si

B. Cheng, Chuanbo Li, Zhi Liu, 2022, Journal of Semiconductors.

Zero-bias high-responsivity high-bandwidth top-illuminated germanium p—i—n photodetectors

B. Cheng, Chuanbo Li, C. Xue, 2014 .

Photoluminescence Mechanism of Si Nanocrystals Embedded in SiO2 Matrix

B. Cheng, Qiming Wang, Jinzhong Yu, 2006, 3rd IEEE International Conference on Group IV Photonics, 2006..

Near-Infrared Femtosecond Laser for Studying the Strain in $\hbox{Si}_{1\hbox{-}{\rm x}}\hbox{Ge}_{\rm x}$ Alloy Films via Second-Harmonic Generation

Qidai Chen, B. Cheng, Ji-Hong Zhao, 2010, IEEE Photonics Journal.

Efficient 974 nm emission through up-conversion in ErxYb2−xSi2O7 thin films for Si solar cells

B. Cheng, C. Xue, Y. Zuo, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

Growth and characterization of GePb/Ge multiple quantum wells

B. Cheng, Y. Zuo, Zhi Liu, 2023, Journal of Alloys and Compounds.

Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-semiconductor field-effect transistor fabricated on (111)-oriented substrate

Y. Hao, G. Han, B. Cheng, 2014 .

Study of GePb photodetectors for shortwave infrared detection.

B. Cheng, C. Xue, Y. Zuo, 2019, Optics express.

Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

B. Cheng, Chuanbo Li, C. Xue, 2018, Journal of Crystal Growth.

Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure

B. Cheng, J. Z. Yu, Dianzhong Li, 2001 .

X-ray evidence for Ge/Si(001) island columns in multilayer structure

Qiyuan Wang, B. Cheng, J. Z. Yu, 2001 .

Fabrication of 1.55-/spl mu/m Si-based resonant cavity enhanced photodetectors using sol-gel bonding

B. Cheng, Y. Zuo, R. Mao, 2004, IEEE Photonics Technology Letters.

Photoluminescence characterization of GeSn prepared by rapid melting growth method

B. Cheng, Y. Zuo, Zhi Liu, 2023, Journal of Luminescence.

High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

B. Cheng, C. Xue, H. Xue, 2010, IEEE Electron Device Letters.

Metalorganic vapor-phase epitaxy of β-(Al Ga1-)2O3 on (2¯ 0 1) Ga2O3 substrates

B. Cheng, Chuanbo Li, Y. Zuo, 2023, Journal of Crystal Growth.

Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing

Wei Wang, S. Su, B. Cheng, 2011 .

Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate

S. Su, B. Cheng, Guijiang Lin, 2012 .

Growth and characterization of β-Ga2O3 thin films grown on off-angled Al2O3 substrates by metal-organic chemical vapor deposition

B. Cheng, Chuanbo Li, Y. Zuo, 2022, Journal of Semiconductors.

Effect of titanium doping on conductivity, density of states and conduction mechanism in ZnO thin film

B. Cheng, M. Rafiq, Chuanbo Li, 2019, Applied Physics A.

Efficient 1.54-μm emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation

B. Cheng, Y. Zuo, Qiming Wang, 2015 .

Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering

B. Cheng, Y. Zuo, Qiming Wang, 2014 .

Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source.

B. Cheng, C. Xue, Qiming Wang, 2018, Small.

Humidity and selective oxygen detection by Ag2S nanoparticles gas sensor

B. Cheng, A. Tok, M. Rafiq, 2019, Journal of Materials Science: Materials in Electronics.

Investigation of lead surface segregation during germanium–lead epitaxial growth

B. Cheng, C. Xue, Y. Zuo, 2020, Journal of Materials Science.

High-Columbic-Efficiency Lithium Battery Based on Silicon Particle Materials

B. Cheng, Junying Zhang, Chuanbo Li, 2015, Nanoscale Research Letters.

A binder-free Si-based anode for Li-ion batteries

Fan Yang, B. Cheng, Chuanbo Li, 2015 .

Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion

B. Cheng, Zeeshan Tariq, B. Haq, 2021, Journal of Materials Science.

Shape evolution of Ge/Si(001) islands induced by strain-driven alloying

Buwen Cheng, Dianzhong Li, Yuhua Zuo, 2001 .

GeSn p-i-n photodetector for all telecommunication bands detection.

Qiming Wang, Wei Wang, Chunlai Xue, 2011, Optics express.

Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping.

S. Su, B. Cheng, Chuanbo Li, 2012, Optics express.

Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx

B. Cheng, Chuanbo Li, C. Xue, 2018, IEEE Transactions on Electron Devices.

High-responsivity GeSn short-wave infrared p-i-n photodetectors

Qiming Wang, Chunlai Xue, Buwen Cheng, 2013 .

Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys.

B. Cheng, C. Xue, Wenqi Huang, 2017, Physical chemistry chemical physics : PCCP.

Well-aligned periodic germanium nanoisland arrays with large areas and improved field emission performance induced by femtosecond laser

Qiang Wu, B. Cheng, Jun Zheng, 2020 .

Defect-free high Sn-content GeSn on insulator grown by rapid melting growth

B. Cheng, Chuanbo Li, C. Xue, 2016, Scientific Reports.

Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

S. Su, B. Cheng, C. Xue, 2011 .

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

S. Su, B. Cheng, Chunwang Zhao, 2013, Materials.

Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

B. Cheng, Chuanbo Li, C. Xue, 2014, Nanoscale Research Letters.

Conductance modulation of Si nanowire arrays

K. Fobelets, B. Cheng, Chuanbo Li, 2012 .

Investigation on n-Type (−201) β-Ga2O3 Ohmic Contact via Si Ion Implantation

B. Cheng, Y. Zuo, Peipei Ma, 2022, Tsinghua Science and Technology.

Highly Enhanced SWIR Image Sensors Based on Ge1–xSnx–Graphene Heterostructure Photodetector

B. Cheng, C. Xue, Qiming Wang, 2019, ACS Photonics.

Photocurrent enhancement by utilizing unidirectional excitation of surface plasmons

Buwen Cheng, Zhi Liu, Chuanbo Li, 2016, SPIE/COS Photonics Asia.

Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis

S. Su, B. Cheng, Chunwang Zhao, 2012 .

Ultrathin Broadband Germanium-Graphene Hybrid Photodetector with High Performance.

B. Cheng, Chuanbo Li, Qiming Wang, 2017, ACS applied materials & interfaces.

Small SiGe quantum dots obtained by excimer laser annealing

G. Han, B. Cheng, Haitao Yang, 2008 .

Impact of ammonia on the electrical properties of p-type Si nanowire arrays

K. Fobelets, B. Cheng, Chuanbo Li, 2013 .

Ge/Si quantum dots thin film solar cells

Chao He, B. Cheng, Chuanbo Li, 2013 .

Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Y. Yeo, G. Han, S. Su, 2013 .

Dopant Segregation and Nickel Stanogermanide Contact Formation on $\hbox{p}^{+} \hbox{Ge}_{0.947}\hbox{Sn}_{0.053}$ Source/Drain

Y. Yeo, G. Han, S. Su, 2012, IEEE Electron Device Letters.

Thermally Stable Multi-Phase Nickel-Platinum Stanogermanide Contacts for Germanium-Tin Channel MOSFETs

B. Liu, Y. Yeo, G. Han, 2012 .

Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

B. Cheng, W. Ge, J. Z. Yu, 2007 .

Photocurrent Enhancement in Si-Ge Photodetectors by Utilizing Surface Plasmons

B. Cheng, Chuanbo Li, Zhi Liu, 2017, Plasmonics.

30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

B. Cheng, Baile Chen, C. Xue, 2021, Photonics Research.

MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors

B. Cheng, Junying Zhang, Chuanbo Li, 2018 .

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature

S. Su, B. Cheng, Chuanbo Li, 2012, Nanoscale Research Letters.

Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn

B. Cheng, C. Xue, Y. Zuo, 2020, Scientific Reports.

Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

B. Cheng, Cheng Li, Songyan Chen, 2017 .

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Y. Yeo, W. Wang, B. Liu, 2013, IEEE Transactions on Electron Devices.

Ni(Ge_1−x−ySi_xSn_y) Ohmic Contact Formation on p-type Ge_0.86Si_0.07Sn_0.07

B. Cheng, Chuanbo Li, C. Xue, 2015, IEEE Electron Device Letters.

Ni(Ge 1− x − y Si x Sn y ) Ohmic Contact Formation on p-type Ge 0.86 Si 0.07 Sn 0.07

B. Cheng, C. Xue, Y. Zuo, 2015 .

Numerical calculation of strain-N+-Ge1−xSnx/P+-δGe1−xSnx/N−-Ge1−y−zSiySnz/P+-Ge1−y−zSiySnz heterojunction tunnel field-effect transistor

B. Cheng, Chuanbo Li, C. Xue, 2017 .

Relaxed Ge0.97Sn0.03 P-channel tunneling FETs with high drive current fabricated on Si and further improvement enabled by uniaxial tensile strain

Y. Hao, G. Han, B. Cheng, 2015, 2015 International Symposium on VLSI Technology, Systems and Applications.

Insight into the effect of ligand-exchange on colloidal CsPbBr3 perovskite quantum dot/mesoporous-TiO2 composite-based photodetectors: much faster electron injection

B. Cheng, Chuanbo Li, Y. Zuo, 2017 .

All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance.

Fan Yang, Qiming Wang, Buwen Cheng, 2017, Dalton transactions.

Temperature dependent direct-bandgap light emission and optical gain of Ge

Chao He, B. Cheng, Dongliang Zhang, 2016 .

Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells

B. Cheng, Chuanbo Li, C. Xue, 2012 .

GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

Yue Hao, Chunfu Zhang, Yan Liu, 2016, IEEE Electron Device Letters.

Strained GeSn p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors With In Situ Si2H6 Surface Passivation: Impact of Sn Composition

Y. Hao, G. Han, B. Cheng, 2014, IEEE Transactions on Electron Devices.

Growth of Crystalline Ge1-xSnx Films on Si by Magnetron Sputtering

B. Cheng, Chuanbo Li, Y. Zuo, 2014 .

Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect

Jietao Liu, B. Cheng, Chuanbo Li, 2018, Journal of Applied Physics.

Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\circ} \hbox{C}$ Rapid Thermal Anneal

Y. Yeo, W. Wang, B. Liu, 2012, IEEE Electron Device Letters.

Effect of heavy boron doping on the electrical characteristics of SiGe HBTs

B. Cheng, C. Xue, Qiming Wang, 2007 .

Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates

B. Cheng, C. Xue, Y. Zuo, 2020 .

High-Performance Germanium Waveguide Photodetectors on Silicon

B. Cheng, C. Xue, Y. Zuo, 2020 .

Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn

B. Cheng, Chuanbo Li, C. Xue, 2018, Japanese Journal of Applied Physics.

Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

Chao He, B. Cheng, Zhi Liu, 2016 .

Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

Chao He, B. Cheng, Chuanbo Li, 2014 .

Dopant Segregation and Nickel Stanogermanide Contact Formation on Source/Drain

Y. Yeo, G. Han, S. Su, 2012 .

Dramatic increase in SWIR detection for GeSn strip detector with graphene hybrid structure

B. Cheng, Chuanbo Li, Xiaoming Zhang, 2023, Journal of Alloys and Compounds.

Strained and strain-relaxed epitaxial Ge 1- x Sn x alloys on Si(100) substrates

S. Su, B. Cheng, Y. Zuo, 2011 .

High quality epitaxial Ge1−xSnx alloy films on Si with a Ge buffer by molecular beam epitaxy with combined sources

S. Su, B. Cheng, Y. Zuo, 2010, 7th IEEE International Conference on Group IV Photonics.

Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates

Chao He, B. Cheng, Chuanbo Li, 2016, Journal of Materials Science: Materials in Electronics.

Theoretical study of the optical gain characteristics of a Ge 1-x Sn x alloy for a short-wave infrared laser

B. Cheng, Dongliang Zhang, C. Xue, 2015 .

Crystal Quality Improvement of GeSn Alloys by Thermal Annealing

B. Cheng, Dongliang Zhang, C. Xue, 2014 .

Formation and characterization of Ni/Al Ohmic contact on n + -type GeSn

Chao He, B. Cheng, Dongliang Zhang, 2015 .

75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique

B. Cheng, Y. Zuo, Zhi Liu, 2023, Journal of Semiconductors.

1$\,\times\,$ 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

B. Cheng, C. Xue, Qiming Wang, 2009, Journal of Lightwave Technology.

Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

Bin Liu, Ran Cheng, Xiao Gong, 2013, 2013 Symposium on VLSI Technology.

High-speed and high-power germanium photodetector based on a trapezoidal absorber.

B. Cheng, Y. Zuo, Jun Zheng, 2022, Optics letters.

48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth

Fan Yang, Qiming Wang, Chunlai Xue, 2017, Journal of Lightwave Technology.

Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure

B. Cheng, Dianzhong Li, C. Huang, 2000 .

Silicon-based Resonant-Cavity-Enhanced Photodetectors

B. Cheng, Chuanbo Li, C. Xue, 2006, 3rd IEEE International Conference on Group IV Photonics, 2006..

Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)

B. Cheng, Jinzhong Yu, Cheng Li, 2003 .

SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 μm operation fabricated using wafer bonding techniques

Liping Luo, B. Cheng, Y. Zuo, 2002 .

Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors

Buwen Cheng, Chuanbo Li, Yuhua Zuo, 2005 .

1.55μmGe islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror

Chengfang Li, Buwen Cheng, Yuhua Zuo, 2004 .

Silicon-based long wavelength photodetectors

Chunlai Xue, Qiming Wang, Buwen Cheng, 2009, 2009 Asia Communications and Photonics conference and Exhibition (ACP).

Si-based membrane resonant cavity enhanced photodetectors

Qiming Wang, Chunlai Xue, Buwen Cheng, 2005 .

High-Performance GeSn Photodetector Covering All Telecommunication Bands

B. Cheng, C. Xue, Y. Zuo, 2021, IEEE Photonics Journal.

High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application

B. Cheng, Chuanbo Li, C. Xue, 2019, Chinese Physics B.

Effect of the silicon substrate structure on chip spiral inductor

B. Cheng, C. Xue, Qiming Wang, 2008 .

Harnessing microcomb-based parallel chaos for random number generation and optical decision making

B. Cheng, W. Xie, Haowen Shu, 2023, Nature communications.

Study of Strain Evolution Mechanism in Ge1-xSnx Materials Grown by Low Temperature Molecular Beam Epitaxy

B. Cheng, C. Xue, Chi Xu, 2021, Journal of Crystal Growth.

GeSn on Si avalanche photodiodes for short wave infrared detection

Xiao Lin, Xiaoyan Hu, Dongliang Zhang, 2018, Other Conferences.

GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

Qiming Wang, Chunlai Xue, Buwen Cheng, 2016 .

Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer

K. Fobelets, B. Cheng, Chuanbo Li, 2013 .

Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation

Y. Hao, G. Han, B. Cheng, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation

Y. Hao, G. Han, B. Cheng, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

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