Y. Bogumilowicz

发表

Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS

N. Cherkashin, J. Hartmann, O. Weber, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]

Paul Crozat, Jean-Michel Hartmann, Delphine Marris-Morini, 2013 .

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications

Frederic Boeuf, Charles Baudot, Delphine Marris-Morini, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Y. Bogumilowicz, F. Ducroquet, Xinyu Bao, 2016 .

Reduced Pressure - Chemical Vapor Deposition of high Ge content (20% - 55%) SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, G. Rolland, 2004 .

InP-based composite substrates for four junction concentrator solar cells

Shay Reboh, Eric Guiot, Thomas Signamarcheix, 2015 .

Realization and characterization of thin single crystal Ge films on sapphire

F. Dimroth, B. Ghyselen, L. Benaissa, 2013 .

Engineering strained silicon on insulator wafers with the Smart CutTM technology

Y. Bogumilowicz, N. Kernevez, Pascal Besson, 2004 .

Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H

N. Cherkashin, K. Bourdelle, C. Mazure, 2008 .

High-temperature growth of very high germanium content SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, A. Papon, 2006 .

High germanium content SiGe virtual substrates grown at high temperatures

N. Cherkashin, J. Hartmann, A. Claverie, 2005 .

Direct Bonding of Silicon to Platinum

B. Ghyselen, Y. Bogumilowicz, L. Clavelier, 2011 .

Strain Measurements in SiGe Devices by Aberration-Corrected High Resolution Electron Microscopy

F. Hüe, J. Hartmann, A. Claverie, 2008 .

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

D. Caliste, X. Bao, Y. Bogumilowicz, 2016, 1701.08078.

Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates

J. Hartmann, X. Bao, Y. Bogumilowicz, 2015 .

Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

S. Maitrejean, V. Lapras, B. Previtali, 2018 .

Selective chemical vapour etching of Si1−xGex versus Si with gaseous HCl

J. Hartmann, Y. Bogumilowicz, T. Billon, 2006 .

Nano-Heteroepitaxy: An Investigation of SiGe Pillars Coalescence

M. Charles, J. Hartmann, M. Argoud, 2019, ECS Journal of Solid State Science and Technology.

Reduced pressure-chemical vapor deposition of high ge content Si1-xGex and high C content Si1-yCy layers for advanced metal oxide semiconductor transistors

J. Hartmann, F. Andrieu, Y. Bogumilowicz, 2005 .

Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

J. Hartmann, Y. Bogumilowicz, 2014 .

Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

Yves Campidelli, Y. Bogumilowicz, R. Truche, 2005 .

Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

Y. Bogumilowicz, Jean-Michel Hartmann, R. Truche, 2004 .

Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template

Y. Bogumilowicz, F. Ducroquet, Mickael Martin, 2018 .

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Y. Bogumilowicz, G. Rolland, J. Hartmann, 2005 .

Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

Y. Bogumilowicz, Jean-Michel Hartmann, Xinyu Bao, 2016 .

Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

F. Hüe, N. Cherkashin, A. Claverie, 2006 .

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

N. Cherkashin, J. Hartmann, A. Claverie, 2005 .

SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

M. Charles, J. Hartmann, M. Argoud, 2018, Nanotechnology.

Reduced Pressure–Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

F. Andrieu, T. Ernst, Y. Bogumilowicz, 2008 .

High temperature growth of very high Ge content SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, A. Papon, 2006, 2006 International SiGe Technology and Device Meeting.

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

X. Bao, C. Vizioz, V. Loup, 2014 .

Investigation of the Low Temperature / High Temperature Approach to Produce Si0.5Ge0.5 and Pure Ge Strain Relaxed Buffers

J. Hartmann, V. Delaye, Y. Bogumilowicz, 2016 .

SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition

J. Hartmann, Y. Bogumilowicz, G. Rolland, 2005 .

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Y. Bogumilowicz, Mickael Martin, T. Baron, 2018 .

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

W. Schwarzenbach, J. Widiez, D. Mariolle, 2023, Materials Science Forum.

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

N. Cherkashin, A. Claverie, Y. Bogumilowicz, 2005 .