A. Papon

发表

Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS

N. Cherkashin, J. Hartmann, O. Weber, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO/sub 2//TiN gate stack

J. Hartmann, O. Weber, F. Andrieu, 2006, IEEE Transactions on Electron Devices.

Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications

G. Molas, A. Toffoli, H. Grampeix, 2007, 2007 IEEE International Electron Devices Meeting.

Potentialities of LiTaO3 for Bulk Acoustic Wave Filters

P. Perreau, D. Mariolle, Y. Lamy, 2020, 2020 IEEE International Ultrasonics Symposium (IUS).

Controlling electrical and optical properties of zinc oxide thin films grown by thermal atomic layer deposition with oxygen gas

M. Guennou, A. Papon, J. Polesel-Maris, 2020, Results in Materials.

Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si Wafers

J. Hartmann, J. Colonna, T. Ernst, 2008 .

Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Laurent Vivien, Suzanne Laval, G. Rolland, 2004 .

A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets

G. Guegan, S. Deleonibus, F. Martin, 2000, IEEE Electron Device Letters.

SiGe channel p-MOSFETs scaling-down

G. Ghibaudo, F. Andrieu, T. Ernst, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

/spl Omega/FETs transistors with TiN metal gate and HfO/sub 2/ down to 10nm

X. Garros, O. Faynot, M. Vinet, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories

G. Molas, H. Grampeix, J. Colonna, 2007 .

Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses

G. Molas, E. Vianello, P. Blaise, 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.

Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling

G. Molas, E. Vianello, P. Blaise, 2010, 2010 International Electron Devices Meeting.

Full InGaN red light emitting diodes

A. Papon, D. Vaufrey, S. Chenot, 2020 .

High-temperature growth of very high germanium content SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, A. Papon, 2006 .

Mechanical understanding of 100 mm InP and GaAs direct bonded heterostructure

T. Salvetat, F. Fournel, V. Carron, 2015 .

Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes

Jean-Michel Hartmann, Laurent Vivien, Suzanne Laval, 2004 .

A survey of the geometrical reconstruction of [011] defects in semiconductors: Grain boundaries and dislocations

A. Papon, M. Petit, 1985 .

Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

S. Maitrejean, V. Lapras, B. Previtali, 2018 .

Crystallographic orientation engineering in silicon-on-insulator substrates

O. Faynot, B. Ghyselen, T. Signamarcheix, 2010 .

Electron Microscopy Study of the Structure of the £ =9, 11 Symmetrical Tilt Grain Boundaries in Germanium

A. Papon, M. Petit, G. Silvestre, 1981 .

Mechanical understanding of 100 mm InP and GaAs direct bonded heterostructure

T. Salvetat, F. Fournel, V. Carron, 2015, Microsystem Technologies.

Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide

S. Joblot, A. Papon, D. Mangelinck, 2021, Microelectronic Engineering.

Simulation of Writing and Erasing Processes of GeSbTe and GeSbTeSn with GeN Interlayers in the Case of Dual-Level DVR Discs

H. Hofmann, R. Anciant, A. Papon, 2002, International Symposium on Optical Memory and Optical Data Storage Topical Meeting.

Nano-Heteroepitaxy: An Investigation of SiGe Pillars Coalescence

M. Charles, J. Hartmann, M. Argoud, 2019, ECS Journal of Solid State Science and Technology.

A two steps CVD process for the growth of silicon nano-crystals

R. Truche, J. Hartmann, A. Papon, 2003 .

LST ANALYSIS OF SILICON OXIDE MICRO PRECIPITATES IN SILICON MATERIALS

A. Papon, J. Joly, J. Bonnafé, 1990 .

Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si

Olivier Renault, D. Blin, Anne-Marie Papon, 2003 .

Structural properties of tensily strained Si layers grown on SiGe(100), (110), and (111) virtual substrates

J. Hartmann, L. Baud, D. Rouchon, 2009 .

Asymmetric critical current of niobium microbridges with ferromagnetic stripe

A. Papon, Z. Barber, K. Senapati, 2008 .

The generic nature of the Smart-Cut® process for thin film transfer

B. Ghyselen, E. Jalaguier, H. Moriceau, 2001 .

Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

M. Bernard, M. Cyrille, D. Rouchon, 2020, Journal of Applied Physics.

Structure of the σ = 9,11 symmetrical tilt grain boundaries in germanium Electron microscopy observations

A. Papon, M. Petit, J. Bacmann, 1984 .

Width and temperature dependence of hysteretic current–voltage character in long Niobium microbridges

A. Papon, Z. Barber, K. Senapati, 2009 .

Estimation of stacking-fault energies in transition metals

A. Papon, M. Desjonquéres, J. Simon, 1979 .

Study of ∊ = 5 (130) symmetrical tilt boundary structure in germanium

A. Papon, M. Petit, G. Silvestre, 1985 .

Calculation of {112} twin and stacking fault energies in b.c.c. transition metals

A. Papon, M. Desjonquéres, J. Simon, 1979 .

High C content Si/Si1−yCy heterostructures for n-type metal oxide semiconductor transistors

R. Truche, S. Deleonibus, T. Ernst, 2004 .

Defects in SIMOX structures: some process dependence

J. Lamure, A. Papon, J. Margail, 1992 .

Ultra-low energy SIMS analysis of boron deltas in silicon

J. Hartmann, A. Papon, F. Laugier, 2002 .

COMPARISON OF 11 B + AND 49 BF 2 + AT LOW IMPLANTATION ENERGY IN GERMANIUM PREAMORPHIZED SILICON

M. Minondo, A. Papon, C. Jaussaud, 1993 .

Strain compensation effects on the annealing of Ge+-B+-implanted silicon

A. Papon, B. Biasse, A. Ferreiro, 1989 .

High-temperature ion beam synthesis of cubic SiC

A. Papon, G. Rolland, M. Olivier, 1990 .

Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices

J. Hartmann, A. Papon, J. Barnes, 2009 .

Characterization of the buffer layer in SiC heteroepitaxy

R. Berjoan, A. Papon, C. Jaussaud, 1993 .

Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon

A. Papon, C. Jaussaud, N. Becourt, 1993 .

Fracture in (100)Si after high energy protons implantation

A. Papon, E. Ntsoenzok, F. Rieutord, 2012 .

Synthesis of In-Plane Oriented Tin Sulfides by Organosulfur-Mediated Sulfurization of Ultrathin SnO2 Films

H. Renevier, D. Rouchon, A. Papon, 2022, Chemistry of Materials.

Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging

J. Hartmann, D. Rouchon, A. Papon, 2010 .

Smart-Cut® process using metallic bonding: Application to transfer of Si, GaAs, InP thin films

Bernard Aspar, Michel Bruel, E. Jalaguier, 1999 .

Basic mechanisms involved in the Smart-Cut® process

M. Bruel, B. Aspar, C. Maleville, 1997 .

Defects in SIMOX structures: causes and solutions

M. Bruel, A. Papon, C. Jaussaud, 1991 .

Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation

J. Rothman, Gérard Destefanis, Michael Tchagaspanian, 2009 .

Status of p-on-n Arsenic-Implanted HgCdTe Technologies

O. Gravrand, Gérard Destefanis, A. Kerlain, 2011 .

SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

M. Charles, J. Hartmann, M. Argoud, 2018, Nanotechnology.

Suppression mechanisms for oxidation stacking faults in silicon on insulator

C. Tsamis, A. Papon, N. Guillemot, 1992 .

Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices

G. Ghibaudo, G. Reimbold, R. Clerc, 2001 .

High temperature growth of very high Ge content SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, A. Papon, 2006, 2006 International SiGe Technology and Device Meeting.

Formation of shallow P+-N junctions by dual Ge+/B+ implantation

R. Truche, J. Pontcharra, A. Papon, 1987 .

Transfer of 3 in GaAs film on silicon substrate by proton implantation process

Bernard Aspar, Marc Zussy, Michel Bruel, 1998 .

A new Si:C epitaxial channel nMOSFET architecture with improved drivability and short-channel characteristics

T. Ernst, J.-M. Hartmann, S. Deleonibus, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Interaction energy between transition impurities and stacking faults of compact transition metals

A. Papon, J. Simon, P. Guyot, 1981 .

Silicon carbide on insulator formation by the Smart-Cut® process

M. Bruel, A. Papon, C. Jaussaud, 1997 .

Reduced pressure–chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 μm photo-detection

J. Hartmann, A. Papon, G. Rolland, 2003 .

Investigation of the Low Temperature / High Temperature Approach to Produce Si0.5Ge0.5 and Pure Ge Strain Relaxed Buffers

J. Hartmann, V. Delaye, Y. Bogumilowicz, 2016 .

Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

J. Hartmann, S. Kerdilès, V. Delaye, 2019, ECS Journal of Solid State Science and Technology.

Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

C. Leroux, X. Garros, J. Damlencourt, 2003 .

Suppression of oxidation stacking faults in silicon separation by oxygen

C. Tsamis, A. Papon, N. Guillemot, 1992 .

Growth and structural properties of SiGe virtual substrates on Si(1 0 0), (1 1 0) and (1 1 1)

A. Papon, T. Billon, J. Hartmann, 2009 .

NEG thin films for under controlled atmosphere MEMS packaging

Pierre Nicolas, Lionel Tenchine, Xavier Baillin, 2011 .

Reduced pressure chemical vapor deposition of Ge thick layers on Si(0 0 1), Si(0 1 1) and Si(1 1 1)

V. Destefanis, Anne-Marie Papon, A. Papon, 2008 .

Metal gate and high-k integration for advanced CMOS devices

Thomas Skotnicki, Sorin Cristoloveanu, Simon Deleonibus, 2003, 2003 8th International Symposium Plasma- and Process-Induced Damage..

75 nm damascene metal gate and high-k integration for advanced CMOS devices

X. Garros, S. Deleonibus, C. Leroux, 2002, Digest. International Electron Devices Meeting,.