Y. Lin

High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

J. H. Chen, C. L. Chen, S. B. Wang, 2010, 2010 International Electron Devices Meeting.

Optimization of gate insulator material for GaN MIS-HEMT

H. Iwai, Y. Lin, K. Kakushima, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors

Yu-Cheng Lin, Y. Su, Y. Lin, 2007 .

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

S. H. Chen, Y. Lin, H. Hsu, 2020, Micromachines.

High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate

K. Y. Lee, Y. Yeo, M. Tsai, 2016, 2016 IEEE Symposium on VLSI Technology.

First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack

H. Iwai, Y. Lin, E. Chang, 2018, 2018 IEEE Symposium on VLSI Technology.

Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments

H. Iwai, G. Brammertz, Y. Lin, 2011, IEEE Electron Device Letters.

Orthotropic stress field induced by TSV and its impact on device performance

M. F. Chen, Doug C. H. Yu, H. A. Teng, 2011, 2011 IEEE International Interconnect Technology Conference.

Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

Y. Lin, H. Hsu, E. Chang, 2019, 2019 14th European Microwave Integrated Circuits Conference (EuMIC).