C. Lu

High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

J. H. Chen, C. L. Chen, S. B. Wang, 2010, 2010 International Electron Devices Meeting.

Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates

Sheng-Po Chang, I-Cherng Chen, Shoou-Jinn Chang, 2006 .

Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing

C. Merckling, J. Kwo, M. Caymax, 2010 .

Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing

C. Merckling, J. Kwo, M. Caymax, 2010, 68th Device Research Conference.

Cycle time and process improvement by single wafer thermal processing in production environment

S. S. Chen, K. C. Chen, C. Chou, 2002, 10th IEEE International Conference of Advanced Thermal Processing of Semiconductors.

Stress release for shallow trench isolation by single-wafer, rapid-thermal steam oxidation

K. C. Chen, C. Hsueh, C. Lu, 2002, 10th IEEE International Conference of Advanced Thermal Processing of Semiconductors.

Comments, with reply, on "Shallow-junction diode formation by implantation of arsenic and boron through TiSi/sub 2/ film and rapid thermal annealing" by L. Rubin et al

C. Lu, R. Liu, 1991 .