P. Lim

High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

J. H. Chen, C. L. Chen, S. B. Wang, 2010, 2010 International Electron Devices Meeting.

High performance tantalum carbide metal gate stacks for nMOSFET application

H.J. Lin, H.J. Tao, S.C. Chen, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement

Wai Kin Chim, P. Lim, W. Chim, 2001 .

Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing

P. Lim, D. Chan, W. Chim, 1998, IEEE Electron Device Letters.

Anomalous Gate-Edge Leakage Induced by High Tensile Stress in NMOSFET

Y. Mii, Po-Tsun Liu, H. Tao, 2008, IEEE Electron Device Letters.

Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices

P. Lim, W. Chim, K. Lai, 2000, ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425).

Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides

Y. Mii, Po-Tsun Liu, H. Tao, 2008 .

Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)

M. Liang, V. Chang, C. C. Chen, 2006 .