T. Kuan

发表

A novel CVD-SiBCN Low-K spacer technology for high-speed applications

W. Lee, C. Ko, T. Kuan, 2008, 2008 Symposium on VLSI Technology.

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

Min Cao, Feng Yuan, Tsung-Lin Lee, 2010, 2010 International Electron Devices Meeting.

The Effects of Mechanical Uniaxial Stress on Junction Leakage in Nanoscale CMOSFETs

Wen-Chin Lee, S. Chang, C. Ko, 2008, IEEE Transactions on Electron Devices.

Influence on light-induced degradation in Cz-Si PERC cells under light soaking of variant wavelength and intensity

P. Yu, T. Kuan, M. Tsai, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Process optimization for Potential Induced Degradation improvement on cell level

T. Kuan, Chih-Chiang Huang, L. Wu, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

The influence of vicinal sapphire substrate on GaN epilayers and LED structures grown by metalorganic chemical vapor deposition

Y. Su, H. Shin, T. Kuan, 2006 .

Metal-oxide-HEMT on 6.1Å antimonides

J. Chyi, Wen-Chin Lee, C. Wann, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Nitride-based HFETs with carrier confinement layers

S. Chang, Y. Su, C. Ko, 2004 .

Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

S. Chang, Y. Su, C. Ko, 2004 .

High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

C. K. Wang, C. Huang, S. Chang, 2004 .

Nitride-based 2DEG photodetectors with a large AC responsivity

S. Chang, Y. Su, C. Ko, 2003 .

On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors

S. Chang, Y. Su, C. Ko, 2002 .

ZnSe Nanowire Photodetector Prepared on Oxidized Silicon Substrate by Molecular-Beam Epitaxy

S. Chang, C. Ko, T. Kuan, 2009 .

Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0 0 0 1) substrates

S. Chang, P. Chang, T. Kuan, 2007 .

P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

S. Chang, Y. Su, C. Ko, 2002 .

Nitride-based HFETs with carrier confinement layers

T. Kuan, Y. Cherng, Y. Su, 2003, International Semiconductor Device Research Symposium, 2003.

Low‐temperature grown indium oxide nanowire‐based antireflection coatings for multi‐crystalline silicon solar cells

T. Kuan, I. Chen, Cheng-Yeh Yu, 2016 .

High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors

Y. Liu, S. Chang, Y. Su, 2003 .

InGaN/GaN light emitting diodes with a p-down structure

S. Chang, Y. Su, T. Kuan, 2002 .

Two-step epitaxial lateral overgrowth of GaN

S. Chang, Y. Su, C. Ko, 2003 .

Impact of Laser-Doped Selective Emitters Parameter for Industrial Mono PERC Solar Cells

T. Kuan, C. Kuo, Chih-Chiang Huang, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

NiSi Schottky Barrier Process-Strained Si (SB-PSS) CMOS Technology for High Performance Applications

J.W. Hsu, C.H. Ko, C.H. Ge, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer

S. Chang, Y. Su, C. Ko, 2003 .