A. Rotondaro

发表

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2 SRAM and ultra low-k back end with eleven levels of copper

M. Belyansky, L. Black, J. Holt, 2006, 2009 Symposium on VLSI Technology.

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

D. T. Grider, H. Bu, Y. Kim, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Extending the reliability scaling limit of SiO/sub 2/ through plasma nitridation

D. T. Grider, W. Hunter, M. Rodder, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Gas-Phase Wafer Cleaning Technology

A. Rotondaro, A. Muscat, 2008 .

Eddy Simoen, Antonio Rotondaro, E. Simoen, 1994 .

A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide

G.A. Brown, J. D. Luttmer, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

G.A. Brown, A. Chatterjee, M. Rodder, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials

A. Rotondaro, L. Colombo, M. Visokay, 2005 .

3.1.1 Micro- reactors and gas sensors based on locally heated carbon nanotubes decorated with Ti nanoparticles

A. Gobbi, A. Rotondaro, R. Savu, 2012 .

Stability of zirconium silicate films on Si under vacuum and O2 annealing

I. Baumvol, L. Miotti, A. Rotondaro, 2001 .

Outplating of Metallic Contaminants on Silicon Wafers From Diluted Acid Solutions

M. Heyns, C. Claeys, A. Rotondaro, 1995 .

Reliability evaluation of HfSiON gate dielectric film with 12.8 /spl Aring/ SiO/sub 2/ equivalent thickness

J. McPherson, R. Khamankar, A. Rotondaro, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Impact of Fe and Cu Contamination on the Minority Carrier Lifetime of Silicon Substrates

M. Heyns, E. Simoen, C. Claeys, 1996 .

Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors

A. Rotondaro, L. Colombo, T. H. Baum, 2002 .

Multi-Chip Module (MCM-D) using thin film technology

R. C. Teixeira, A. Rotondaro, A. Flacker, 2014, 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).

Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

R. Wallace, B. Gnade, G. Soares, 2004 .

Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

G. Soares, I. Baumvol, L. Miotti, 2004 .

Application of HfSiON as a gate dielectric material

Luigi Colombo, James J. Chambers, A. Rotondaro, 2002 .

Interaction of the Sulphuric Acid Hydrogen Peroxide Mixture with Silicon Surfaces

Cor Claeys, Marc Heyns, Marc Meuris, 1994 .

Micro-reactors for characterization of nanostructure-based sensors.

A. Gobbi, A. Rotondaro, R. Savu, 2012, The Review of scientific instruments.

Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

Luigi Colombo, James J. Chambers, Rafael Peretti Pezzi, 2002 .

Simple method for the determination of the interface trap density at 77 K in fully depleted accumulation mode SOI MOSFETs

Eddy Simoen, C. Claeys, Joao Antonio Martino, 1993 .

Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs

Z. Celik-Butler, L. Colombo, Z. Çelik-Butler, 2006, IEEE Transactions on Electron Devices.

Flicker noise in nitrided high-k dielectric NMOS transistors

Luigi Colombo, Keith Green, Bigang Min, 2005, SPIE International Symposium on Fluctuations and Noise.

H2O2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity

M. Heyns, M. Meuris, A. Rotondaro, 1995 .

Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics

J. McPherson, S. Aur, P. Nicollian, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Feasibility of using W/TiN as metal gate for conventional 0.13 /spl mu/m CMOS technology and beyond

A. Chatterjee, M. Rodder, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Silica Formation during Etching of Silicon Nitride in Phosphoric Acid

A. Rotondaro, D. Bassett, 2016 .

Environment of hafnium and silicon in Hf-based dielectric films: An atomistic study by x-ray absorption spectroscopy and x-ray diffraction

I. Baumvol, L. Miotti, A. Rotondaro, 2005 .

Modeling of Capillary Pattern Collapse on Sub-5nm Pillars Using Molecular Dynamics

A. Rotondaro, D. Aryal, D. Bassett, 2023, Solid State Phenomena.

Advanced CMOS transistors with a novel HfSiON gate dielectric

H. Bu, R. Khamankar, T. Grider, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).