W. Tseng

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

Min Cao, Feng Yuan, Tsung-Lin Lee, 2010, 2010 International Electron Devices Meeting.

(Invited) Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS

H. Bender, N. Waldron, M. Caymax, 2010 .

Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

H. Bender, M. Caymax, M. Heyns, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Investigation of Bulk Traps Enhanced Gate-Induced Leakage Current in Hf-Based MOSFETs

M. Liang, T. Lee, K.T. Huang, 2008, IEEE Electron Device Letters.

Supercritical CO/sub 2/ clean with novel solution for 65 nm and beyond BEOL performance improvement

M. Liang, J.L. Yang, H. Lo, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..