T. Matsusue

Interface roughness scattering in GaAs/AlAs quantum wells

H. Sakaki, Takeshi Noda, K. Hirakawa, 1987 .

Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)

Hiroyuki Sakaki, Hisao Yoshimura, H. Sakaki, 1987 .

Elastic scattering of 56 MeV polarized deuterons from complex nuclei

H. Shimizu, H. Sakamoto, S. Kobayashi, 1980 .

Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

T. Matsusue, S. Yoon, T. Ng, 2003 .

Radiative recombination coefficient of free carriers in GaAs‐AlGaAs quantum wells and its dependence on temperature

H. Sakaki, T. Matsusue, 1987 .

Coherent Dynamics of Excitons in an Island-Inserted GaAs/AlAs Quantum Well Structure : Suppression of Phase Relaxation and a Deep Quantum Beat

H. Sakaki, H. Akiyama, T. Matsusue, 1999 .

Phase Relaxation Processes of Excitons in Island- Inserted Quantum Well Structures—Suppression of Relaxation and Giant Quantum Beats

H. Akiyama, T. Matsusue, M. Kuwata-Gonokami, 1993 .

Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry

T. Someya, H. Sakaki, H. Akiyama, 1993 .

Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

T. Matsusue, Masaki Oishi, Kazunuki Yamamoto, 2018 .

Measurement of polarization dependence of two-photon absorption coefficient in InP using extended Z-scan technique for thick materials

T. Matsusue, Masaki Oishi, Kazunuki Yamamoto, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Nuclear-shape effects in the inelastic scattering of polarized deuterons at 56 MeV

H. Shimizu, H. Sakamoto, T. Matsusue, 1981 .

Polarization effects in the QFS region of the p-d breakup reaction at 65 MeV

H. Shimizu, R. Takashima, T. Matsusue, 1982 .

Diffusion of two-dimensional excitons in pseudo-random potentials embedded in quantum well structures

H. Sakaki, H. Akiyama, T. Matsusue, 1993 .

Non-uniform resonant coupling effect on 2D electron transport in δ-doped double quantum well structures

H. Sakaki, Y. Ohno, T. Matsusue, 1994 .

Control of Electron Population by Intersubband Optical Excitation in a novel Asymmetric Double Quantum Well Structure

H. Sakaki, H. Akiyama, Y. Kadoya, 1994 .

Suppression of lateral diffusion of excitons in GaAs quantum wells under perpendicular magnetic fields

H. Sakaki, H. Akiyama, T. Matsusue, 1995 .

THz-wave absorption by field-induced carriers in pentacene thin-film transistors for THz imaging sensors

T. Matsusue, K. Kudo, M. Nakamura, 2013 .