D. Fulkerson

Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply]

S. Laux, M. Fischetti, D. Fulkerson, 1991 .

A computer solution for the steady-state behaviour of a PN-junction diode☆

Allen Nussbaum, D. E. Fulkerson, A. Nussbaum, 1966 .

A silicon integrated circuit force sensor

D. E. Fulkerson, D. Fulkerson, 1969 .

A two-dimensional model for the calculation of common-emitter current gains of lateral p-n-p transistors

D. Fulkerson, David E. Fulkerson, 1968 .

Digital GaAs FET versus Si FET gate delay as predicted from the electron velocity

D. Fulkerson, 1992 .

A charge-control SPICE engineering model for the parasitic bipolar transistor action in SOI CMOS single-event upsets

D.E. Fulkerson, H. Liu, D. Fulkerson, 2004, IEEE Transactions on Nuclear Science.

The characterization of the static behavior of p-n junction devices

D. Fulkerson, 1967 .

An Engineering Model for Single-Event Effects and Soft Error Rates in Bulk CMOS

David E Fulkerson, D. Fulkerson, 2011, IEEE Transactions on Nuclear Science.