P. Siffert

发表

Real-time high intensity X-ray dosimetry diamond monitors: Response simulations compared to silicon sensitivities

M. Jung, J. Morel, P. Siffert, 2005 .

Laser‐beam annealing of heavily damaged implanted layers on silicon

P. Siffert, J. Muller, A. Grob, 1978 .

Hard-X and soft gamma ray polarimetry with CdTe array prototypes

R. M. Curado da Silva, E. Caroli, J. Stephen, 2003, 2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515).

Open‐circuit voltage of MIS silicon solar cells

P. Siffert, J. Ponpon, 1976 .

Calculated temperature distribution during laser annealing in silicon and cadmium telluride

R. Bell, P. Siffert, M. Toulemonde, 1979 .

Silicon : evolution and future of a technology

E. F. Krimmel, P Siffert, P. Siffert, 2004 .

Optimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser

A. Slaoui, P. Siffert, R. Stuck, 1989 .

ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H2+ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON

P. Siffert, J. Muller, A. Goltzené, 1983 .

Spectral characteristics of small- and large-volume CdTe detectors: comparison among hemispheric, planar, and pixellated structure

P. Siffert, M. Hage-ali, M. Sowinska, 2002 .

Structural and electrical damage induced by high‐energy heavy ions in SiO2/Si structures

A. Slaoui, P. Siffert, E. Dooryhee, 1992 .

High Energy Heavy Ions Irradiation of Thermal SiO 2 Films on Si

A. Slaoui, P. Siffert, M. Toulemonde, 1992 .

New experimental investigations of the density effect on inner-shell excitation and energy loss

P. Siffert, F. Meyer, S. Møller, 1983 .

Properties of Cd1−xZnxTe crystals grown by high pressure Bridgman for nuclear detection

K. Cherkaoui, P. Siffert, G. Brémond, 1998 .

Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

P. Siffert, J. Muller, R. Stuck, 1975 .

A miniature multi-detector gamma probe (12 CdTe) for ambulatory monitoring of the left ventricular function

J. Chambron, C. Scheiber, P. Siffert, 1992, 1992 14th Annual International Conference of the IEEE Engineering in Medicine and Biology Society.

X-ray irradiation effects on the trapping properties of Cd1−xZnxTe detectors

L. Pasquini, P. Siffert, B. Fraboni, 2009 .

Time and thermal recovery of irradiated CdZnTe detectors

P. Siffert, B. Fraboni, A. Cavallini, 2006 .

Recovery of radiation damage in CdTe and CdZnTe Detectors

P. Siffert, B. Fraboni, A. Cavallini, 2004, IEEE Symposium Conference Record Nuclear Science 2004..

Investigation of defects in THM grown cadmium telluride after irradiation damaging

P. Siffert, M. Hage-ali, M. Samimi, 1985 .

Passivation of bulk trapping levels in cadmium telluride by proton implantation

P. Siffert, M. Hage-ali, J. M. Koebel, 1989 .

Defects introduced in cadmium telluride by γ irradiation

P. Siffert, B. Fraboni, A. Cavallini, 2001 .

CHAPTER 6 - Growth Methods of CdTe Nuclear Detector Materials

P. Siffert, M. Hage-ali, 1995 .

Studies of CdTe surfaces with secondary ion mass spectrometry, rutherford backscattering and ellipsometry

P. Siffert, R. Stuck, M. Hage-ali, 1979 .

Chapter 2 Rutherford Backscattering Spectroscopy (R.B.S.)

P. Siffert, J. Grob, 1984 .

Recent Advances in UHF Crystal Filters

P. Siffert, B. D'albaret, 1982 .

Improvement of silicon nitride solar cells after thermal processing gettering or passivation

P. Siffert, J. Muller, J. Schunck, 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

Comparative Efficiency of Hydrogen Passivation Procedures for Cost Effective Multicrystalline Silicon Solar Cells

P. Siffert, J. Muller, J. Schunck, 1991 .

Temperature parameter in hydrogen passivation of multicrystalline silicon solar cells

P. Siffert, J. Muller, Vu Thuong Quat, 1988 .

Temperature dependence of the reflectance of solid and liquid silicon

P. Siffert, J. M. Koebel, M. Lampert, 1981 .

COMPARISON OF GENERATION AND RECOMBINATION LIFETIMES IN HIGH-RESISTIVITY SILICON

J. Fontaine, P. Siffert, J. Schunck, 1994 .

Defects Introduced into Silicon by Boron Implantation in the MeV Energy Range

P. Siffert, J. Muller, R. Stuck, 1977 .

Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions

P. Siffert, J. Muller, R. Stuck, 1974 .

Status of semi-insulating cadmium telluride for nuclear radiation detectors

P. Siffert, M. Hage-ali, 1992 .

Resistivity simulation of CZT materials

K. Cherkaoui, P. Siffert, G. Brémond, 1999 .

Equilibrium segregation coefficient and liquid diffusion coefficient of some impurities in tellurium

P. Siffert, M. Hage-ali, J. M. Koebel, 1987 .

VRBS: A virtual RBS simulation tool for ion beam analysis

Y. Hervé, P. Siffert, R. Stuck, 1998 .

Monte Carlo simulations to study fast neutron real-time personal diamond and silicon dosemeters: Sensitivity calculations and background transparency analysis

M. Jung, J. Morel, P. Siffert, 2007 .

Real defect concentration measurements of nuclear detector materials by the combination of PICTS and SCLC methods

P. Siffert, M. Hage-ali, F. Klotz, 2001 .

Study of trapping in mercuric iodide by thermally stimulated current measurements

P. Siffert, J. Muller, R. Stuck, 1976 .

Detailed investigations of shower formation in Ge- and W-crystals traversed by 40–287 GeV/c electrons

K. Elsener, P. Siffert, M. H. Ali, 1989 .

Rapid Thermal Annealing of Spin-On Glass Films

L. Ventura, A. Slaoui, P. Siffert, 1992 .

Defect generation and gettering during rapid thermal processing

P. Siffert, J. Muller, B. Hartiti, 1992 .

Measurement of barrier height on etched p-type cadmium telluride

P. Siffert, J. Ponpon, M. Saraphy, 1980 .

Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cells

P. Siffert, J. Muller, M. Loghmarti, 1996 .

Influence of Oxygen on Rapid Thermal Co-Diffusion of Phosphorus and Aluminium in Silicon

P. Siffert, J. Muller, B. Hartiti, 1995 .

Multicrystalline silicon solar cells processed by rapid thermal processing

B. Wagner, A. Slaoui, P. Siffert, 1993, Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).

Behaviour of hole and electron dominated photorefractive CdTe:V crystals under external continuous or periodic electric field

P. Gravey, P. Siffert, R. Triboulet, 1995 .

Characterization and identification of the deep levels in V doped CdTe and their relationship with the photorefractive properties

P. Siffert, G. Brémond, R. Triboulet, 1995 .

Optical and thermal spectroscopy of vanadium-doped CdTe and related photorefractive effect

P. Gravey, O. Moine, K. Cherkaoui, 1994 .

Noise temperature contours for high-sensitivity SQUID's Low-noise tunnel junction dc SQUID's

O. Tsukamoto, P. Siffert, J. Muller, 1981 .

A-Si Solar cells prepared by the glow discharge technique

G. H. Bauer, J. Metselaar, P. Siffert, 1988 .

Search for correlations between electrical characteristics and stoichiometry in mercuric iodide

P. Siffert, A. Tadjine, J. M. Koebel, 1983 .

Use of a Monte-Carlo Code to Determine in High Z Semi-Conductor CdTe and CZT, Both Carriers Lifetimes and Mobilities

M. Jung, P. Siffert, M. Hage-ali, 1997 .

Development of a scanning minority‐carrier transient spectroscopy technique with optical injection and full transient analysis

E. Courcelle, P. Siffert, A. Mesli, 1988 .

Random and channeled energy loss in thin germanium and silicon crystals for positive and negative 2-15-GeV/c pions, kaons, and protons

G. Charpak, F. Sauli, P. Siffert, 1978 .

Determination of concentration profiles by elastic recoil detection with a ΔE−E gas telescope and high energy incident heavy ions

P. Siffert, J. Grob, M. Hage-ali, 1989 .

HgI{sub 2} two-dimensional arrays based on resistive charge division readout

P. Siffert, J. M. Koebel, M. Vigilante, 1997 .

A resistive charge division based microstrip detector for X- and γ-ray spectrometers

P. Siffert, J. M. Koebel, M. Vigilante, 1994 .

The decay of 187Pt: Comparison of the levels of 187Ir with those of heavier odd mass iridium isotopes

M. Finger, P. Siffert, J. Jastrzȩbski, 1973 .

Analysis of Light Elements in Solar Silicon

P. Siffert, R. Stuck, J. Stoquert, 1987 .

Residual Defects in Laser Annealed Si

P. Siffert, J. Muller, A. Goltzené, 1981 .

Characterization of undoped high resistivity CdTe grown by a THM method

P. Siffert, J. Muller, R. Stuck, 1977 .

Cadmium Telluride Nuclear Radiation Detectors

P. Siffert, R. Stuck, A. Cornet, 1975, IEEE Transactions on Nuclear Science.

Study of the homogeneity of CdTe-THM monolithic nuclear detector arrays: the role of electron lifetime and leakage current

P. Siffert, M. Hage-ali, J. M. Koebel, 2002 .

Diamond nuclear radiation detectors

P. Siffert, R. Stuck, M. Hage-ali, 1974 .

Possibilities of Ion Implantation in Silicon Solar Cell Manufacturing

P. Siffert, 1982 .

Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing

A. Slaoui, P. Siffert, J. Muller, 1992 .

TSC in HgI2 crystals grown by solution and vapor phase techniques

P. Siffert, J. Muller, A. Friant, 1978 .

Preliminary results on mercuric iodide nuclear radiation detectors

P. Siffert, R. Stuck, J. Ponpon, 1974 .

Field-enhanced neutralization of electrically active boron in hydrogen implanted Schottky diodes

E. Courcelle, P. Siffert, J. Muller, 1986 .

Energy loss straggling of protons and He ions in gold from 0.1 to 1.0 MeV/u

P. Siffert, M. Hage-ali, M. Toulemonde, 1986 .

Charge‐state‐dependent iron precipitation in silicon

P. Siffert, A. Mesli, T. Heiser, 1990 .

A new high energy implantation facility for materials research at the CRN, Strasbourg

P. Siffert, J. Grob, D. Muller, 1993 .

On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon

P. Siffert, J. Muller, M. Hage-ali, 1988 .

Temperature dependence of the average energy per electron-hole pair in Silicon and Germanium

P. Siffert, R. Stuck, J. Ponpon, 1973 .

HIGH Tc YBaCuO AND BiSrCaCuO SUPERCONDUCTING THIN FILMS DEPOSITED BY PULSED EXCIMER LASER EVAPORATION

P. Siffert, J. Perrière, E. Fogarassy, 1989 .

Numerical Analysis of Transient Capacitance Data Obtained from Titanium Induced Levels in Silicon

E. Courcelle, P. Siffert, A. Mesli, 1986 .

Radioactive β+ DE 30S

P. Siffert, A. Gallmann, E. Aslanides, 1966 .

Heavy ions induced electrical and structural defects in thermal SiO/sub 2/ films

A. Slaoui, P. Siffert, A. Mesli, 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

ArF Excimer Laser Doping into Amorphous Silicon thin films

A. Slaoui, P. Siffert, R. Stuck, 1991 .

Strong improvement of diffusion length by phosphorus and aluminum gettering

P. Siffert, J. Muller, R. Stuck, 1993 .

Formation of palladium and titanium silicides by rapid thermal annealing

P. Siffert, A. Grob, J. Grob, 1985 .

Investigation on the performances of multiple microstrip CdTe detectors

G. Ventura, A. Cola, P. Siffert, 2007 .

A study of the spectroscopic performance of a CdTe microstrip detector

L. Brigliadori, G. Ventura, A. Cola, 2002, 2002 IEEE Nuclear Science Symposium Conference Record.

Study of THM-CdTe monolithic nuclear detectors matrix

P. Siffert, M. Hage-ali, J. M. Koebel, 2001 .

Monte Carlo Polarimetric Efficiency Simulations for a Single Monolithic CdTe Thick Matrix

E. Caroli, J. Stephen, P. Siffert, 2001 .

Lattice Site of Iron in LiNbO3(Fe3+) by the PIXE/Channelling Technique

P. Siffert, M. F. Silva, J. Soares, 1991 .

Study of the thickness of the dead Layer below electrodes, deposited by electroless technique, in CdTe nuclear detectors

G. Ventura, P. Siffert, M. Roumie, 2006, IEEE Transactions on Nuclear Science.

Hard X- and soft gamma-ray polarimetry with CdTe array prototypes

J. Stephen, G. Ventura, P. Siffert, 2003, IEEE Transactions on Nuclear Science.

Deposition of high Tc YBaCuO and BiSrCaCuO superconducting thin films by pulsed excimer laser evaporation

P. Siffert, J. Perrière, E. Fogarassy, 1988 .

Rectifying Process in Surface Barrier Detectors

P. Siffert, G. Laustriat, A. Coche, 1964 .

Stopping power of 16O, 48Ti and 108Ag ions in C and Al between 0.5 and 3. MeV/u

P. Siffert, J. Grob, M. Hage-ali, 1992 .

Stopping power of C and Al ions in solids

P. Siffert, J. Grob, M. Hage-ali, 1991 .

Slowing down of heavy ions in solids near the stopping power maximum

P. Siffert, J. Grob, A. Abdesselam, 1991 .

Undoped high‐resistivity cadmium telluride for nuclear radiation detectors

Paul Siffert, Robert Triboulet, P. Siffert, 1974 .

A portable cadmium telluride multidetector probe for cardiac function monitoring

J. Chambron, C. Scheiber, P. Siffert, 1997, Computers in Cardiology 1997.

Radiation damage induced by 2 MeV protons in CdTe and CdZnTe semiconductor detectors

M. Bianconi, P. Siffert, B. Fraboni, 2004 .

Chapter 8 CdTe Nuclear Detectors and Applications

Paul Siffert, P. Siffert, M. Hage-ali, 1995 .

Cadmium Telluride Detectors and Applications

Paul Siffert, P. Siffert, 1982 .

CHAPTER 7 - Characterization of CdTe Nuclear Detector Materials

P. Siffert, Makram Hage-Ali and, 1995 .

Ion Implanted Contacts on Cadmium Telluride Detectors

P. Siffert, J. Grob, R. Stuck, 1972 .

On the lattice site of trivalent dopants and the structure of Mg2+-OH--M3+ defects in LiNbO3:Mg crystals

P. Siffert, Katalin Polgar, László Kovács, 1993 .

Surface Stochiometrie and Carbon Distribution in Mercuric Iodide by Ion Analysis

P. Siffert, J. Grob, A. Tadjine, 1980 .

Properties of Vapour Phase Grown Mercuric Iodide Single Crystal Detectors

P. Siffert, R. Stuck, J. Ponpon, 1975, IEEE Transactions on Nuclear Science.

A model for laser induced diffusion

P. Siffert, R. Stuck, E. Fogarassy, 1983 .

Excimer laser induced oxidation of ion‐implanted silicon

S. Pennycook, P. Siffert, E. Fogarassy, 1988 .

Passivation of high-resistivity cadmium telluride by hydrogen implantation

P. Siffert, M. Hage-ali, M. Samimi, 1987 .

Low cost ion implantation into silicon and pulsed annealing. application to the manufacturing of solar cells

P. Siffert, J. Muller, 1982 .

Electrically active defects in silicon after excimer laser processing

A. Slaoui, P. Siffert, J. Muller, 1989 .

Pulsed laser annealing of rf sputtered amorphous Si-H films doped with arsenic

P. Siffert, R. Stuck, E. Fogarassy, 1982 .

Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic +

P. Siffert, M. Balkanski, R. Stuck, 1981 .

Laser processing in the preparation of silicon solar cells

P. Siffert, J. Muller, R. Stuck, 1980, IEEE Transactions on Electron Devices.

LASER ANNEALING OF a-Si:H

P. Siffert, J. Muller, M. Toulemonde, 1980 .

Two-Photon Absorption Cross Section for Silane Under Pulsed Arf (193 nm) Excimer Laser Irradiation

P. Siffert, B. Aka, E. Fogarassy, 1987 .

Carbon and silicon in travelling heater method grown semi-insulating CdTe

P. Siffert, M. Hage-ali, J. M. Koebel, 1993 .

Trace analysis in cadmium telluride by heavy ion induced x-ray emission and by SIMS

P. Siffert, R. Stuck, J. Cailleret, 1980 .

Influence of dilution in nitrogen on the photodissociation processes of silane and disilane at 193 nm

P. Siffert, E. Fogarassy, C. Fuchs, 1989 .

Crystal growth,surfaces and applications

Paul Siffert, Robert Triboulet, P. Siffert, 2010 .

Study of the resistivity mapping in CdTe:Cl-correlation with annealing and Te-precipitates

P. Siffert, M. Hage-ali, J. M. Koebel, 2002 .

Deflection of charged particles in the hundred GeV regime using channeling in bent single crystals

I. V. Mitchell, E. Tsyganov, W. Gibson, 1984 .

DEFLECTION OF HIGH ENERGY CHANNELED CHARGED PARTICLES BY ELASTICALLY BENT SILICON SINGLE CRYSTALS

I. V. Mitchell, E. Tsyganov, W. Gibson, 1984 .

Trap parameters of Ag, Co, Cr and Te impurities in Ge(Li) detectors

P. Siffert, R. Henck, W. Schoenmaekers, 1972 .

Influence of Selected Chemical Impurities on the Trapping Parameters of Ge(Li) Counters

P. Siffert, R. Stuck, R. Henck, 1972 .

Trapping Effects in Ge(Li) Detectors and Search for a Correlation with Characteristics Measured on the P-Type Crystals

P. Siffert, R. Henck, D. Gutknecht, 1970 .

Collection Efficiency and Charge Carrier Losses in Coaxial and Planar Ge(Li) Detectors. Influence on the Time Resolution

P. Siffert, R. Stuck, D. Poenaru, 1970 .

CDTE AND CD1-XZNXTE FOR NUCLEAR DETECTORS : FACTS AND FICTIONS

P. Siffert, P. Siffert, M. Hage-ali, 1999 .

Zinc segregation in HPB grown nuclear detector grade Cd1−xZnxTe

P. Siffert, M. Benkaddour, M. Hage-ali, 1999 .

Determination of the Conversion Factor for Infrared Measurements of Carbon in Silicon

J. Regolini, P. Siffert, J. Stoquert, 1986 .

Classical and Rapid Thermal Process Effects on Oxygen and Carbon Precipitation in Silicon

P. Siffert, J. Muller, M. Loghmarti, 1995 .

Heavy element diffusion in cadmium telluride

I. V. Mitchell, P. Siffert, J. Grob, 1973 .

Indium dopant behaviour in CdTe single crystals

Paul Siffert, P. M. Fochuk, O. A. Parfenyuk, 2001 .

Analysis of superconducting thin films by ion beam methods. Comparison of nuclear techniques and SIMS

P. Siffert, R. Stuck, J. Perrière, 1990 .

e+-e− pair creation by 40–150 GeV photons incident near the 〈110〈 axis in a germanium crystal

D. Barberis, A. Doyle, R. Ellison, 1988 .

Formation of dislocations during high dose boron implantation into silicon

P. Siffert, J. Grob, 1983 .

Evaluation of the use of six diagnostic X-ray spectra computer codes.

A Constantinesco, P Siffert, A. Constantinesco, 2004, The British journal of radiology.

New Trends in Interstitial Laser Photocoagulation of Bones.

A. Gangi, J. Dietemann, C. Roy, 1997, Seminars in musculoskeletal radiology.

Characteristics of A 85 cm3 Ge(Li) γ-ray detector

P. Siffert, R. Henck, A. Coche, 1968 .

Decay characteristics of short-lived radio-nuclides studied by on-line isotope separator techniques

F. Münnich, K. Wilsky, P. Siffert, 1969 .

Properties of low-lying levels of even isotopes of Pt

M. Finger, P. Siffert, R. Foucher, 1970 .

A study of 2 MeV oxygen implantation to form deeply buried SiO 2 layers

C. D'anterroches, P. Siffert, A. Grob, 1989 .

A silicon-on-insulator structure formed by implantation of megaelectronvolt oxygen

C. D'anterroches, P. Siffert, A. Grob, 1989 .

Low energy α-p pulse-shape discrimination with silicon surface barrier detectors

P. Siffert, A. Coche, 1966 .

Detection of high energy protons by Ge(Li) counters

P. Siffert, M. Hage-ali, R. Bertini, 1972 .

Timing Performance of Ge(Li) Detectors

P. Siffert, J. Miehé, 1970 .

Influence de differentes sources de bruit sur la resolution en temps des diodes Ge(Li)

P. Siffert, J. Miehé, A. Coche, 1969 .

Coincidence Experiments with Coaxial Ge(Li) Detectors in the Low Energy Range

P. Siffert, J. Miehé, R. Henck, 1968 .

Spectromètres Ge(Li) 0 absorption totale

P. Siffert, R. Henck, A. Coche, 1969 .

Efficacite et resolution en temps d'un detecteur Ge(Li) DE 120 cm3

P. Siffert, J. Miehé, R. Henck, 1969 .

Cu, I and Au stopping powers in solid targets

P. Siffert, J. Grob, M. Hage-ali, 1992 .

Realisation de diodes n-i-p AU germanium. Application a la spectrometrie γ

P. Siffert, R. Henck, A. Coche, 1965 .

Fast-neutron personal real-time dosemeter for mixed neutron and gamma fields

Paul Siffert, M. Jung, Claude Teissier, 1999, Optics & Photonics.

Channeling of high-energy particles in bent crystals – Experiments at the CERN SPS

P. Grafström, C. Biino, K. Elsener, 2000 .

Determination of carbon in EFG silicon ribbons by nuclear techniques and SIMS

R. Bell, P. Siffert, R. Stuck, 1980 .

Pulse Height Defects Due to Nuclear Collisions Measured with Thin Window Silicon Surface Barrier Detectors

P. Siffert, J. Mayer, A. Coche, 1968 .

The use of rapid thermal annealing for studying contamination in silicon

A. Slaoui, P. Siffert, J. Muller, 1991 .

A dechanneling investigation of MeV oxygen implanted silicon

P. Siffert, A. Grob, J. Grob, 1991 .

Gold and platinum accumulation on buried defects in silicon

P. Siffert, P. Rohr, J. Grob, 1993 .

Damage created in silicon by 1 MeV O+ ions as a function of beam power

P. Siffert, A. Grob, J. Grob, 1992 .

Transverse straggling of MeV oxygen ions implanted in silicon

P. Siffert, A. Grob, J. Grob, 1988 .

Recoil implantation of antimony into silicon

P. Siffert, A. Grob, J. Grob, 1981 .

On the origin of rapid thermal process induced recombination centers in silicon

P. Siffert, W. Eichhammer, Vu‐Thuong‐Quat, 1989 .

Inhomogeneous defect activation by rapid thermal processes in silicon

P. Siffert, W. Eichhammer, Vu Thuong‐Quat, 1989 .

Electron diffusion length in rapid thermal processed p‐type silicon

P. Siffert, W. Eichhammer, Vu Thuong Quat, 1988 .

Rutherford backscattering analysis of phosphorus gettering of gold and copper

P. Siffert, J. Muller, M. Hage-ali, 1993 .

Silicon solar cells realized by laser induced diffusion of vacuum‐deposited dopants

P. Siffert, J. Grob, R. Stuck, 1981 .

About the origin of the 0.15 to 0.20 eV defect level in cadmium telluride

P. Siffert, M. Hage-ali, J. M. Koebel, 1987 .

Defects in pure and halogen compensated cadmium telluride grown by the THM method

P. Siffert, R. Stuck, A. Cornet, 1976 .

Electronic properties of defects created by 1.6 GeV argon ions in silicon

P. Siffert, J. Muller, M. Toulemonde, 1989 .

Calculation of the temperature during electron pulse annealing of silicon

P. Siffert, M. Toulemonde, 1981 .

Rapid thermal diffusion of phosphorus into silicon from doped oxide films (solar cell manufacture)

A. Slaoui, P. Siffert, J. Muller, 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

Passivation of polycrystalline silicon solar cells by low-energy hydrogen ion implantation

E. Courcelle, P. Siffert, J. Muller, 1986 .

Correlation between Surface Properties and Detection Characteristics of Cadmium Telluride Detectors

P. Siffert, R. Stuck, M. Hage-ali, 1979, IEEE Transactions on Nuclear Science.

Full-energy peak efficiency of cadmium-telluride gamma-ray spectrometers

R. Bell, P. Siffert, A. Cornet, 1974 .

Laser‐induced diffusion by irradiation of silicon dipped into an organic solution of the dopant

P. Siffert, J. Muller, A. Wattiaux, 1981 .

Solar Cells Realized by Laser Induced Diffusion of Dopants Deposited on Silicon Surface

P. Siffert, A. Wattiaux, J. Muller, 1981 .

Chapter 1 Secondary Ion Mass Spectrometry (S.I.M.S.)

P. Siffert, R. Stuck, 1984 .

Interventional radiology with laser in bone and joint.

A. Gangi, J. Dietemann, C. Roy, 1998, Radiologic clinics of North America.

Solubility limit of impurities in silicon after laser induced melting

P. Siffert, J. Grob, R. Stuck, 1980 .

Time-resolved reflectivity and melting depth measurements using pulsed ruby laser on silicon

P. Siffert, M. Hage-ali, S. Unamuno, 1985 .

Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation

P. Siffert, M. Toulemonde, F. Nielsen, 1984 .

Impurity Distribution Profiles and Surface Disorder after Laser Induced Diffusion.

P. Siffert, R. Stuck, J. Desoyer, 1982 .

Role of oxygen in the mechanism of formation of Schottky diodes

P. Siffert, J. Ponpon, 1978 .

Electric field distribution in CdTe and Cd1−xZnxTe nuclear detectors

P. Siffert, P. Siffert, M. Hage-ali, 1999 .

Deep levels and compensation in γ-irradiated CdZnTe

Beatrice Fraboni, Anna Cavallini, Waldes Dusi, 2000 .

High resolution gamma ray spectroscopy with CdTe detector systems

P. Siffert, P. Siffert, M. Richter, 1992 .

On the possibility of immediate analysis of chlorine and sulfur in air by argon ion induced X-ray emission

P. Siffert, J. Cailleret, G. Lagarde, 1981 .

Microscopic defect level characterization of semi-insulating compound semiconductors by TSC and PICTS. Application to the effect of hydrogen in CdTe

P. Siffert, M. Hage-ali, M. Samimi, 1991 .

-Search For a Correlation Between Stoichiometry,TSC Spectra and -NUclear Spectroscopic Capabilities of HCI 2 .

P. Siffert, A. Tadjine, J. M. Koebel, 1982 .

New results from the CERN-SPS beam deflection experiments with bent crystals

P. Grafström, C. Biino, K. Elsener, 1996 .

A proposal to test beam extraction by crystal channeling at the SPS : a first step towards a LHC extracted beam

M. R. Torquati, S. Lami, D. Pedis, 1991 .

Observation of high deflection efficiency and narrow energy loss distributions for 450 GeV protons channeled in a bent silicon crystal

P. Grafström, K. Elsener, P. Siffert, 1994 .

High efficiency beam deflection by planar channeling in bent silicon crystals

K. Elsener, P. Siffert, N. Doble, 1993, Proceedings of International Conference on Particle Accelerators.

High efficiency bending of 450 GeV protons using channeling

P. Grafström, K. Elsener, P. Siffert, 1991 .

Excimer laser induced doping of phosphorus into silicon

F. Foulon, P. Siffert, A. Slaoui, 1990 .

ArF excimer laser doping of boron into silicon

A. Slaoui, P. Siffert, F. Foulon, 1989 .

Material characterization during the fabrication of silicon nuclear detectors

P. Siffert, J. Schunck, J. Fontaine, 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

Properties of silicon dioxide films prepared by pulsed‐laser ablation

Eric Fogarassy, P. Siffert, C. Fuchs, 1992 .

Defect chemistry in CdTe〈In〉 crystals

P. Siffert, I. Turkevych, P. Fochuk, 1999 .

Further results on the aging of silicon Schottky diodes: Influence of the metal

P. Siffert, J. Ponpon, 1979 .

Interface studies of metal-semiconductor contacts by means of SIMS, nuclear reaction and RBS

P. Siffert, A. Grob, J. Grob, 1978 .

Preparation and Characteristics of Natural Diamond Nuclear Radiation Detectors

P. Siffert, R. Stuck, P. Siffert, 1975, IEEE Transactions on Nuclear Science.

Large Departures From Landau Distributions for High-energy Particles Traversing Thin Si and Ge Targets

P. Siffert, S. Møller, J. Bak, 1987 .

Rapid thermal annealing of thin doped and undoped spin-on glass films

L. Ventura, A. Slaoui, P. Siffert, 1995 .

Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser

Paul Siffert, F. Foulon, A. Slaoui, 1988 .

Lattice Disorder Produced in GaAs by Cadmium Implantation

P. Siffert, J. Grob, A. Ghitescu, 1973 .

Boron Implanted Contacts on High Purity Germanium

P. Siffert, J. Grob, R. Stuck, 1971 .

Detailed investigation of the channeling phenomena involved in bending of high-energy beams by means of crystals

P. Siffert, J. Grob, S. Møller, 1984 .

Bending of high energy beams using axial and planar channeling

P. Siffert, J. Grob, J. Forster, 1980 .

Influence of channeling on scattering of 2–15 GeV/c protons, π+, and π− incident on Si and Ge crystals

G. Charpak, F. Sauli, P. Siffert, 1980 .

Channelling effects for 15 GeV/c negative pions

G. Charpak, F. Sauli, P. Siffert, 1978 .

Lithium Driftability in Germanium

P. Siffert, J. Mayer, R. Henck, 1968 .

Ar ion induced X-ray emission for the analysis of light elements in CdTe

P. Siffert, M. Bordas, M. Hage-ali, 1992 .

Electrostatic analysis of backscattered heavy ions for semiconductor surface investigation

P. Siffert, M. Hage-ali, 1981 .

Compound semiconductors surface characterization by high resolution Rutherford backscattering

P. Siffert, M. Hage-ali, 1979 .

Passivation of laser induced defects in silicon by low energy hydrogen ion implantation

A. Slaoui, P. Siffert, J. Muller, 1986 .

Argon ion induced X-ray analysis of silicon and chlorine in cadmium telluride

P. Siffert, J. Cailleret, C. Scharager, 1980 .

Energy loss and straggling of heavy ions by nuclear interactions in silicon

P. Siffert, A. Grob, J. Grob, 1976 .

Window Thickness and Rectifying Process in Surface Barrier Detectors

P. Siffert, A. Coche, G. Forcinal, 1968 .

Silicon for Photovoltaics

P. Siffert, P. Siffert, J. Muller, 2004 .

Polarization in Cadmium Telluride Nuclear Radiation Detectors

P. Siffert, H. B. Serreze, R. O. Bell, 1976, IEEE Transactions on Nuclear Science.

Ion implanted high-purity germanium detectors

P. Siffert, R. Stuck, J. Ponpon, 1972 .

X-Ray fluorescence escape peaks in HgI2 detectors

P. Siffert, R. Régal, C. Heitz, 1994 .

Properties of electroless gold contacts on p-type cadmium telluride

P. Siffert, J. Grob, R. Stuck, 1983 .

Comparison between Various Ion Beam Doping Procedures and Anneal Techniques Used in Manufacturing Silicon Solar Cells

P. Siffert, J. Muller, A. Mesli, 1982 .

Lattice site of trivalent impurities in Mg-doped lithium niobate crystals

K. Polgár, L. Kovács, Z. Szaller, 1991 .

Deep levels in semi-insulating CdTe

Paul Siffert, P. Moravec, P. Siffert, 1993 .

Boron doping of silicon by excimer laser irradiation in a reactive atmosphere

A. Slaoui, P. Siffert, R. Stuck, 1990 .

Photoabsorption of BCl3 Gas under pulsed ArF excimer laser irradiation

A. Slaoui, P. Siffert, E. Fogarassy, 1990 .

Rapid thermal process-induced recombination centers in ion implanted silicon

P. Siffert, W. Eichhammer, R. Stuck, 1990 .

Realization of p-n junction solar cells by an ion implantation doping procedure

P. Siffert, J. Muller, M. Hage-ali, 1980 .

Rapid optical thermal processing of silicon solar cells

W. Warta, B. Wagner, A. Slaoui, 1993, Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).

Towards high‐eficiency silicon solar cells by rapid thermal processing

B. Wagner, A. Slaoui, P. Siffert, 1994 .

Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals

P. Siffert, J. Muller, W. Eichhammer, 1992 .

Back surface field-induced gettering in multicrystalline silicon

A. Slaoui, P. Siffert, J. Muller, 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

Thermal Stabilttx of Hxdrogbnation Processes into Multicrystalline Silicon

Hussain A. Younis, P. Siffert, J. Muller, 1992 .

Classical and Rapid Thermal Process Induced Gettering in Multicrystalline Silicon

P. Siffert, J. Muller, R. Stuck, 1991 .

Recent Developments in High Resistivity Detector-Grade CdTe

P. Siffert, M. Hage-ali, 1993 .

12C, 15N and 16O stopping powers between 0.5 and 3.4 MeV in solid targets

P. Siffert, J. Grob, M. Hage-ali, 1993 .

Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n‐type silicon

P. Siffert, J. Muller, W. Adekoya, 1986 .

Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon

A. Slaoui, P. Siffert, J. Muller, 1990 .

Thermal annealing of excimer-laser-induced defects in virgin silicon

A. Slaoui, P. Siffert, J. Muller, 1989 .

Thermal annealing effects on grain boundary recombination activity in silicon

P. Siffert, J. Muller, H. Amzil, 1989 .

Electrical effects of surface and deep states induced in n-type silicon by rapid thermal processing

P. Siffert, J. Muller, W. Adekoya, 1987 .

Rapid thermal annealing of electrically-active defects in virgin and implanted silicon

P. Siffert, J. Muller, W. Adekoya, 1987 .

Determination of segregation coefficients of a series of impurities in tellurium

P. Siffert, M. Hage-ali, J. M. Koebel, 1987 .

Electrical and magnetic properties of Cd1−xZnxTe crystals

P. Siffert, P. Fochuk, O. Parfenyuk, 2004 .

Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPBM

P. Siffert, P. Siffert, M. Hage-ali, 1996 .

CdTe–InSb heterojunctions

R. Bell, P. Siffert, B. Rabin, 1980 .

Influence of zinc on the photorefractive behaviour of Cd1−xZnxTe:V

P. Gravey, P. Siffert, G. Brémond, 1996 .

Evolution of resistivity along Cl-compensated THM grown cadmium telluride crystals

P. Siffert, M. Hage-ali, J. M. Koebel, 1987 .

Influence of deep levels on CdZnTe nuclear detectors

K. Cherkaoui, P. Siffert, G. Brémond, 1999 .

Effective and equilibrium evaporation coefficients of some impurities in molten tellurium

P. Siffert, M. Hage-ali, J. M. Koebel, 1989 .

Thin dE/dx detectors of uniform thickness made on epitaxial silicon

F. Vazeille, P. Siffert, J. Ponpon, 1973 .

FABRICATION OF HIGH EFFICIENCY SILICON SOLAR CELLS BY LASER INDUCED DIFFUSION

P. Siffert, E. Fogarassy, 1983 .

Irradiation-induced defects in CdTe and CdZnTe detectors

M. Morigi, E. Caroli, P. Siffert, 2001 .

Effects of copper in high resistivity cadmium telluride

P. Siffert, M. Hage-ali, J. M. Koebel, 1988 .

Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum

A. Slaoui, P. Siffert, J. Muller, 1993 .

Gettering of gold by rapid thermal processing

P. Siffert, J. Muller, W. Eichhammer, 1989 .

Hydrogen ion passivation of multicrystalline silicon solar cells

P. Siffert, J. Muller, A. Barhdadi, 1987 .

The use of H2 and NH3 ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique

E. Courcelle, C. Belouet, P. Siffert, 1985 .

Some problems arising in hydrogen passivation of silicon by ion bombardment techniques

P. Siffert, J. Muller, A. Mesli, 1985 .

Multiple-beam ion implantation setup for large scale treatment of semiconductors

E. Courcelle, P. Siffert, J. Muller, 1985 .

Ion implanted solar cells from EFG silicon ribbons

R. Bell, P. Siffert, J. Muller, 1979 .

Excimer laser induced melting of heavily doped silicon: A contribution to the optimization of the laser doping process

P. Siffert, E. Fogarassy, S. Unamuno, 1989 .

Behavior of CdTe and CdZnTe detectors following electron irradiation

P. Siffert, B. Fraboni, N. Auricchio, 2000, 2000 IEEE Nuclear Science Symposium. Conference Record (Cat. No.00CH37149).

Electronic properties of traps induced by γ-irradiation in CdTe and CdZnTe detectors

Ezio Caroli, Beatrice Fraboni, Anna Cavallini, 2000 .

The interaction of copper with structural defects in THM grown cadmium telluride

P. Siffert, M. Hage-ali, J. M. Koebel, 1989 .

Accurate evaluations of thermally stimulated current curves and defect parameters for CdTe crystals

P. Siffert, M. Hage-ali, M. Samimi, 1985 .

Improvements in the purification of cadmium telluride by zone refining

P. Siffert, A. Cornet, A. Coche, 1970 .

Applications of II–VI semimagnetic semiconductors

Paul Siffert, Arnold Burger, A. Mycielski, 2006 .

Quadrupole interaction studies of Hg in Zn and lattice location of Hg and Au in Zn

P. Siffert, M. Hage-ali, R. Trzcinski, 1979 .

Annealing effects on defect levels of CdTe:Cl materials and the uniformity of the electrical properties

F. Klotz, P. Siffert, P. Siffert, 2003 .

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

P. Siffert, J. Muller, A. Mesli, 1989 .

Undoped Semi-insulating Cadmium Telluride for γ-ray Detectors

P. Siffert, A. Cornet, R. Triboulet, 1973 .

Characterization of thin silicon oxide obtained by lamp heating

Paul Siffert, Abdelilah Slaoui, J. P. Ponpon, 1987 .

Effect of hydrogen on high resitivity p-type CdTe

P. Siffert, M. Hage-ali, J. M. Koebel, 1992 .

Methods to suppress polarization in chlorine compensated cadmium telluride detectors

P. Siffert, R. Stuck, A. Cornet, 1977 .

Rapid thermal processing induced defects and gettering effects in silicon

Paul Siffert, Jean-Claude Muller, B. Hartiti, 1991, Other Conferences.

X-ray imaging using CdTe detectors based on detector's capacitance loading and discharging

Paul Siffert, Makram Hage-Ali, M. Merah, 1994, Optics & Photonics.

Performance Comparison of Standard CdTe and Hgl2 Detectors

A. Holtzer, M. Schieber, P. Siffert, 1980, IEEE Transactions on Nuclear Science.

Thermal annealing of gold deposited contacts on high resistivity p-type CdTe nuclear detectors

P. Siffert, P. Siffert, M. Hage-ali, 1992 .

Interaction between arsenic, hydrogen, and silicon matrix in doping of sputtered amorphous hydrogenated silicon

P. Siffert, A. Deneuville, M. Toulemonde, 1981 .

Development of a scanning minority carrier transient spectroscopy method: Application to the study of gold diffusion in a silicon bicrystal

P. Siffert, A. Mesli, T. Heiser, 1989 .

Effects of laser irradiation on phosphorus diffused layers in silicon

P. Siffert, J. Muller, A. Grob, 1980 .

Behaviour of γ-ray detectors from high purity germanium at low temperature

P. Siffert, R. Stuck, J. Ponpon, 1972 .

Behavior of High‐Purity Germanium Nuclear Counters at Low Temperature

P. Siffert, R. Stuck, J. Ponpon, 1971 .

Further Studies on Implanted High Purity Germanium Detectors

P. Siffert, R. Stuck, J. Ponpon, 1972 .

Coherent bremsstrahlung and channeling radiation from 40 and 150 GeV electrons and positrons traversing Si and diamond single crystals near planar directions

K. Elsener, P. Siffert, M. Hage-ali, 1991 .

Hard photon yields from (70–240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

K. Elsener, P. Siffert, M. Hage-ali, 1990 .

Radiation from 170 GeV electrons and positrons traversing thin Si and Ge crystals near the 〈110〉 axis

D. Barberis, A. Doyle, R. Ellison, 1988 .

TSC defect level in silicon produced by irradiation with muons of GeV-energy

P. Siffert, J. Muller, H. Heijne, 1976 .

Polycrystalline Silicon Films for Electronic Devices

A. Slaoui, P. Siffert, 2004 .

Performance of a high resolution CdTe and CdZnTe PIN detectors

R. Arlt, P. Siffert, P. Siffert, 1996 .

PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON CADMIUM TELLURIDE, A MATERIAL FOR GAMMA-RAY DETECTORS, JUNE 29-30, 1971 AT THE CENTRE DE RECHERCHES NUCLEAIRES, STRASBOURG (FRANCE).

P. Siffert, A. Cornet, 1972 .

Recovery of radiation damage in CdTe detectors

A. Cavallini, N. Auricchio, B. Fraboni, 2005, IEEE Transactions on Nuclear Science.

Structural defects in high resistivity cadmium telluride

P. Siffert, M. Hage-ali, J. M. Koebel, 1989 .

Study of the photodecay in CdTe X-ray detectors

P. Siffert, M. Hage-ali, P. Wurm, 1994 .

Internal field distribution in CdTe detectors prepared from semi-insulating materials

Paul Siffert, Makram Hage-Ali, Jean M. Koebel, 1994, Optics & Photonics.

Pulse Processing for Planar Cadmium Telluride Detectors

P. Siffert, Z. T. Kuznicki, P. Siffert, 1993 .

A simple procedure based on the PCD method for determination of recombination lifetime and surface recombination velocity in silicon

J. Fontaine, P. Siffert, J. Schunck, 1994 .

C-V profiling of GaAs FET films

J. D. Wiley, J. V. Meerbergen, P. Siffert, 1978, IEEE Transactions on Electron Devices.

Steady-state current through a multilayer homostructure

P. Siffert, S. Kuźnicki, A. Martinez, 1992 .

Diamond X-ray personal dosimetry. Numerical evaluation against silicon response

M. Jung, J. Morel, P. Siffert, 2003 .

Thin CdTe detectors mounted in back-to-back configuration: spectroscopic performance for low-energy X- and gamma-rays

E. Caroli, P. Siffert, N. Auricchio, 2001 .

Spectroscopic performance of newly designed CdTe detectors

E. Caroli, P. Siffert, N. Auricchio, 2001 .

Spectroscopic performance of thin CdTe detectors mounted in back-to-back configuration

Paul Siffert, Ariano Donati, Gianni Landini, 2000, SPIE Optics + Photonics.

Spectroscopic behavior of CdTe detectors as a function of the interelectrode distance

Paul Siffert, Ariano Donati, Gianni Landini, 1999, Optics & Photonics.

A new method for evaluation of transport properties in CdTe and CZT detectors

M. Jung, J. Morel, P. Siffert, 1999 .

Investigation of response behavior in CdTe detectors versus inter-electrode charge formation position

Ezio Caroli, Ariano Donati, Gianni Landini, 1998 .

A comparison between the response of compound semiconductor detectors in single and back-to-back configuration

P. Siffert, N. Auricchio, A. Donati, 2004 .

Spectroscopic response versus interelectrodic charge formation position in CdTe detectors

E. Caroli, P. Siffert, G. D. Cesare, 1997 .

Modelling and 3D optimisation of CdTe pixels detector array geometry – Extension to small pixels

P. Siffert, P. Siffert, M. Hage-ali, 2001 .

Investigation of response behavior in CdTe detectors versus interelectrodic charge formation position

N. Auricchio, E. Caroli, A. Donati, 1998, 1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255).

Measurement of average electron densities in Si and Ge using MeV δ-rays produced by channelled high-energy projectiles

P. Siffert, J. Grob, J. Forster, 1982 .

Defects Produced by High Energy Oxygen Ions Implanted in Silicon

P. Siffert, A. Grob, J. Grob, 1989 .

Recrystallization of silicon by pulsed lasers

P. Siffert, J. Muller, M. Toulemonde, 1980 .

Measurement of the drift velocity of charge carriers in mercuric iodide

C. Canali, G. Majni, R. Minder, 1974 .

Determination of the Electron Effective Mass and Relaxation Time in Heavily Doped Silicon

A. Slaoui, P. Siffert, 1985, June 16.

Optical and Electrical Properties of Laser Annealed Heavily Doped Silicon

A. Slaoui, P. Siffert, E. Fogarassy, 1984 .

Optical Properties of Laser Induced Heavily Doped Silicon Layers

A. Slaoui, P. Siffert, M. Balkanski, 1983 .

Laser annealing of silicon layers amorphized by molecular ions

P. Siffert, J. Muller, A. Grob, 1980 .

Dose effects during solid phase epitaxial regrowth of boron‐implanted, germanium‐amorphized silicon induced by rapid thermal annealing

P. Siffert, J. Muller, M. Hage-ali, 1988 .

Semiconductors for room-temperature radiation detector applications 2

M. Cuzin, Tuviah E. Schlesinger, Michael R. Squillante, 1998 .