D. T. Danielson

发表

Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films

J. Michel, L. Kimerling, K. Wada, 2006, 3rd IEEE International Conference on Group IV Photonics, 2006..

Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications

D. D. Cannon, J. Michel, L. Kimerling, 2005 .

Near-infrared Ge Photodetectors Fabricated on Si Substrates with CMOS Technology

D. D. Cannon, J. Michel, L. Kimerling, 2003 .

A 20 GHz, tensile strained Ge photodetector on Si platform with detection spectrum for optical communications and on-chip applications

J. Michel, L. Kimerling, Jifeng Liu, 2004, The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004..

Joining of Alumina via Copper/Niobium/Copper Interlayers

D. T. Danielson, R. A. Marks, A. M. Glaeser, 2000 .

Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si ( 100 )

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Surface-energy-driven dewetting theory of silicon-on-insulator agglomeration

Jurgen Michel, Lionel C. Kimerling, Daniel K. Sparacin, 2006 .

Silicon-Germanium multi-quantum well photodetectors in the near infrared.

C. Burrus, K. Saraswat, J. Chen, 2012, Optics express.

Electronic photonic integrated circuits for high speed, high resolution, analog to digital conversion

Rajeev J Ram, J. Michel, L. C. Kimerling, 2006, SPIE OPTO.