TaeYoon An

3-D modeling of fringing gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs

SoYoung Kim, TaeYoon An, Soyoung Kim, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Growth Kinetics and Properties of Thin Cobalt Films Electrodeposited on n-Si(100)

TaeYoon An, Jong Duk Lee, H. Noh, 2010 .

Accurate fringe capacitance model considering RSD and metal contact for realistic FinFETs and circuit performance simulation

SoYoung Kim, TaeYoon An, Kyeungkeun Choe, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).