O. Aktas

发表

60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs

I. Adesida, O. Aktas, A. Kuliev, 2004 .

Application of a parallel DSMC technique to predict flow characteristics in microfluidic filters

N. Aluru, O. Aktas, U. Ravaioli, 2001 .

Vertical Power p-n Diodes Based on Bulk GaN

D. Bour, O. Aktas, T. Prunty, 2015, IEEE Transactions on Electron Devices.

High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

H. Morkoç, O. Aktas, S. Mohammad, 1996 .

Switching characterization of vertical GaN PiN diodes

O. Aktas, J. Flicker, R. Kaplar, 2016, IEEE Workshop on Wide Bandgap Power Devices and Applications.

4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

I. C. Kizilyalli, O. Aktas, O. Aktas, 2015, IEEE Electron Device Letters.

Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates

I. C. Kizilyalli, O. Aktas, O. Aktas, 2015, IEEE Electron Device Letters.

Low Damage Etching of GaN Surfaces via Bias-Assisted Photoenhanced Electrochemical Oxidation in Deionized Water

E. Ozbay, Hongbo Yu, O. Aktas, 2007 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz

I. Adesida, O. Aktas, A. Kuliev, 2003 .

SUPPRESSION OF LEAKAGE CURRENTS AND THEIR EFFECT ON THE ELECTRICAL PERFORMANCE OF ALGAN/GAN MODULATION DOPED FIELD-EFFECT TRANSISTORS

H. Morkoç, A. Salvador, O. Aktas, 1996 .

Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation‐doped field‐effect transistors

H. Morkoç, A. Salvador, O. Aktas, 1996 .

AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)

H. Morkoç, A. Salvador, Zhifang Fan, 1997 .

Microwave performance of AlGaN/GaN inverted MODFET's

H. Morkoç, O. Aktas, S. Mohammad, 1997, IEEE Electron Device Letters.

Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates

D. C. Reynolds, H. Morkoç, A. Salvador, 1995 .

A Coupled DSMC/Navier‐Stokes Method for Multiscale Analysis of Gas Flow in Microfluidic Systems

N. Aluru, Umberto Ravaioli, O. Aktas, 2003 .

Lateral GaN JFET Devices on Large Area Engineered Substrates

O. Aktas, K. Hobart, A. Koehler, 2019, ECS Journal of Solid State Science and Technology.

Transient surface photovoltage in n- and p-GaN as probed by x-ray photoelectron spectroscopy

E. Ozbay, O. Aktas, H. Sezen, 2011 .

NEAR ULTRAVIOLET LUMINESCENCE OF BE DOPED GAN GROWN BY REACTIVE MOLECULAR BEAM EPITAXY USING AMMONIA

H. Morkoç, A. Salvador, O. Aktas, 1996 .

Structural properties of GaN films grown on sapphire by molecular beam epitaxy

H. Morkoç, A. Salvador, David J. Smith, 1996 .

High current and transconductance AlGaN/GaN MODFETs at elevated temperatures

H. Morkoç, O. Aktas, S. Mohammad, 1997, 1997 55th Annual Device Research Conference Digest.

4-kV and 2.8-m -cm 2 Vertical GaN p-n Diodes With Low Leakage Currents

O. Aktas, T. Prunty, I. Kizilyalli, 2015 .

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

G. Vizkelethy, O. Aktas, M. King, 2017 .

Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

S. R. Lee, M. Marinella, R. Fleming, 2016 .

Vertical Power Semiconductor Devices Based on Bulk GaN Substrates

X. Xin, O. Aktas, T. Prunty, 2015 .

Experimental observation of RF avalanche gain in GaN-based PN junction diodes

P. Fay, D. Bour, O. Aktas, 2015 .

Gate bias characterization of CNT-TFT DNA sensors

O. Aktas, T. Toral, 2009, 2009 International Semiconductor Device Research Symposium.

Simulation of GaN and AlGaN static induction transistors

O. Aktas, E. Alptekin, 2006 .

Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes

H. Morkoç, O. Aktas, F. Shiwei, 2001 .

High-transconductance GaN MODFETs

H. Morkoç, A. Salvador, O. Aktas, 1995, Proceedings of International Electron Devices Meeting.

Excitonic recombination in GaN grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1995 .

Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications

O. Aktas, K. Hobart, A. Koehler, 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN PIN Diodes

A. Allerman, G. Vizkelethy, O. Aktas, 2017, IEEE Electron Device Letters.

NEAR-IDEAL PLATINUM-GAN SCHOTTKY DIODES

H. Morkoç, A. Salvador, O. Aktas, 1996 .

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

S. Decoutere, G. Groeseneken, D. Wellekens, 2020, IEEE Transactions on Semiconductor Manufacturing.

Vertical GaN Power Diodes With a Bilayer Edge Termination

Isik C. Kizilyalli, Michael W. Moseley, Ozgur Aktas, 2016, IEEE Transactions on Electron Devices.

Reliability studies of vertical GaN devices based on bulk GaN substrates

Don Disney, Isik C. Kizilyalli, Ozgur Aktas, 2015, Microelectron. Reliab..

Development of High-Voltage Vertical GaN PN Diodes (invited).

J. Gallagher, A. Allerman, M. Crawford, 2020, Proposed for presentation at the Virtual 2020 Spring/Fall MRS meeting held November 27 - December 4, 2020..

First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate

A. Zubair, T. Palacios, J. Perozek, 2020, 2020 Device Research Conference (DRC).

Theory of channel hot-carrier degradation in MOSFETs

Karl Hess, Isik C. Kizilyalli, O. Aktas, 1999 .

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

Jonathan J. Wierer, R. Fleming, A. Allerman, 2015, IEEE Transactions on Nuclear Science.

Continuously tunable terahertz metamaterial employing magnetically actuated cantilevers.

Ozgur Aktas, Burak Ozbey, O. Aktas, 2011, Optics express.

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

O. Aktas, K. Hobart, A. Koehler, 2017 .

Properties of a Si doped GaN/AlGaN single quantum well

H. Morkoç, A. Salvador, O. Aktas, 1995 .

Schottky barriers on anodic‐sulfide‐passivated GaAs and their stability

H. Morkoç, A. Salvador, O. Aktas, 1995 .

Development of High-Voltage Vertical GaN PN Diodes

A. Allerman, M. Crawford, O. Aktas, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Continuously tunable terahertz metamaterial employing magnetically actuated cantilevers.

O. Aktas, Burak Ozbey, 2011, Optics express.

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

O. Aktas, D. Ji, T. Anderson, 2022, AIP Advances.

Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

O. Aktas, I. Kizilyalli, I C Kizilyalli, 2015 .

Electrical and Optical Properties of Semi-insulating GaN

D. C. Reynolds, H. Morkoç, A. Salvador, 1997 .

Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

Hadis Morkoç, Theodore J. Schmidt, O. Aktas, 1996 .