A. Kuliev

发表

60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs

I. Adesida, O. Aktas, A. Kuliev, 2004 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz

I. Adesida, O. Aktas, A. Kuliev, 2003 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

G. Simin, M. Khan, I. Adesida, 2003 .

0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length

I. Adesida, A. Kuliev, V. Kumar, 2003 .

Effect of recess length on DC and RF performance of gate-recessed AlGaN/GaN HEMTs

I. Adesida, A. Kuliev, V. Kumar, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

p-Type SiGe transistors with low gate leakage using SiN gate dielectric

I. Adesida, R. Hammond, S. Koester, 1999, IEEE Electron Device Letters.

High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

T. Tanaka, I. Adesida, A. Kuliev, 2003 .

Propagation of short nonlinear second-sound pulses through He-II in one- and three-dimensional geometry

A. Kuliev, G. Kolmakov, L. Mezhov-Deglin, 1998 .

High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire

I. Adesida, A. Kuliev, V. Kumar, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A study of on-state and off-state breakdown voltages in GaN MESFETs

S. Bahl, I. Adesida, A. Kuliev, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

G. Simin, I. Adesida, V. Kumar, 2002, IEEE Electron Device Letters.

AlGaN/InGaN HEMTs for RF current collapse suppression

I. Adesida, A. Kuliev, R. Schwindt, 2004 .

GaN electronics with high electron mobility transistors

I. Adesida, A. Kuliev, V. Kumar, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

Characterisation of iridium Schottky contacts on n-AlxGa1−xN

I. Adesida, A. Kuliev, Vipan Kumar, 2003 .

Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

G. Simin, M.E. Muir, I. Adesida, 2003, IEEE Microwave and Wireless Components Letters.

High-performance AlGaN/GaN high electron mobility transistors on SiC

G. Simin, M. Khan, I. Adesida, 2002 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

G. Simin, M. Khan, I. Adesida, 2002 .

High transconductance enhancement-mode

I. Adesida, A. Kuliev, Y. Otoki, 2001 .

Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates

Ilesanmi Adesida, V. Kumar, R. Birkhahn, 2004 .

Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

I. Adesida, V. Kumar, R. Schwindt, 2004, IEEE Microwave and Wireless Components Letters.