R. Schwindt

发表

60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs

I. Adesida, O. Aktas, A. Kuliev, 2004 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz

I. Adesida, O. Aktas, A. Kuliev, 2003 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

G. Simin, M. Khan, I. Adesida, 2003 .

0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length

I. Adesida, A. Kuliev, V. Kumar, 2003 .

DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates

I. Adesida, V. Kumar, R. Schwindt, 2002 .

Effect of recess length on DC and RF performance of gate-recessed AlGaN/GaN HEMTs

I. Adesida, A. Kuliev, V. Kumar, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

M. M. Wong, Milton Feng, Shyh-Chiang Shen, 2004, IEEE Electron Device Letters.

Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE

I. Adesida, V. Kumar, R. Schwindt, 2001 .

High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire

I. Adesida, A. Kuliev, V. Kumar, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

G. Simin, I. Adesida, V. Kumar, 2002, IEEE Electron Device Letters.

A low gate bias model extraction technique for AlGaN/GaN HEMTs

Guang Chen, I. Adesida, V. Kumar, 2006, IEEE Transactions on Microwave Theory and Techniques.

AlGaN/InGaN HEMTs for RF current collapse suppression

I. Adesida, A. Kuliev, R. Schwindt, 2004 .

GaN electronics with high electron mobility transistors

I. Adesida, A. Kuliev, V. Kumar, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

G. Simin, M.E. Muir, I. Adesida, 2003, IEEE Microwave and Wireless Components Letters.

High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz

Ilesanmi Adesida, V. Kumar, R. Schwindt, 2003 .

High-performance AlGaN/GaN high electron mobility transistors on SiC

G. Simin, M. Khan, I. Adesida, 2002 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

G. Simin, M. Khan, I. Adesida, 2002 .

0.25 [micro sign]m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

I. Adesida, R. Schwindt, P. Chow, 2001 .

Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates

Ilesanmi Adesida, V. Kumar, R. Birkhahn, 2004 .

A comparative study of surface passivation on AlGaN/GaN HEMTs

Ilesanmi Adesida, V. Kumar, Edwin L. Piner, 2002 .

Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

I. Adesida, V. Kumar, R. Schwindt, 2004, IEEE Microwave and Wireless Components Letters.

DC, RF, and Microwave Noise Performances of

Ilesanmi Adesida, Wu Lu, Edwin L. Piner, 2002 .

Spectral domain analysis of three symmetric coupled lines and application to a new bandpass filter

Cam Nguyen, R. Schwindt, C. Nguyen, 1994 .