C. Button

Siyuan Yu, R. Varrazza, M. Owen, 1999, Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013).

Short‐circuit current and energy efficiency enhancement in a low‐dimensional structure photovoltaic device

J. Nelson, K. Barnham, C. Button, 1991 .

Vibrational modes of carbon acceptors and hydrogen-carbon pairs in semi-insulating InP doped using CCl 4

C. Button, R. Newman, B. R. Davidson, 1998 .

Electron transport in AlGaInP quantum well lasers

P. Smowton, C. Button, P. Blood, 1999 .

Demonstration of passive Q-switching in multiquantum well InGaAs/AlGaInAs diode laser

J. Aitchison, J. Marsh, C. Button, 2000 .

Steady state photocurrent and photoluminescence from single quantum wells as a function of temperature and bias

K. Barnham, C. Button, J. Roberts, 1997 .

A NEW APPROACH TO HIGHER EFFICIENCY SOLAR CELLS BASED ON LOW DIMENSIONAL STRUCTURES

J. Nelson, C. Button, J. Roberts, 1992 .

The LDS Solar Cell— A New Approach to Higher Efficiency

J. Nelson, K. Barnham, C. Button, 1991 .

Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors

G. Hill, C. Button, N. Balkan, 2003 .

Voltage performance of quantum well solar cells in the Al/sub x/Ga/sub 1-x/As/GaAs and the GaAs/In/sub y/Ga/sub 1-y/As material systems

J. P. Connolly, M. Pate, J. Nelson, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Imaging of domains and current filaments in GaAs/AlxGa1-xAs multi-quantum wells

A. C. Churchill, E. Linfield, D. Ritchie, 1993 .

Strain-balanced In/sub 0.62/Ga/sub 0.38/As/In/sub 0.47/Ga/sub 0.53/As(InP) quantum well cell for thermophotovoltaics

J. P. Connolly, C. Rohr, K. Barnham, 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

Determination of the quasi‐Fermi‐level separation in single‐quantum‐well p‐i‐n diodes

J. Nelson, K. Barnham, C. Button, 1996 .

A new approach to p-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells

M. Pate, M. Hopkinson, J. Nelson, 1996, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.

QCSE tuned lasers

Cyril C. Renaud, Alwyn J. Seeds, J. B. Song, 2002 .

Quantum Well Intermixing in Gain As/Gainasp and Gaas/Algaas Structures Using Pulsed Laser Irradiation

A. C. Bryce, J. Marsh, B. Ooi, 1996 .

Reduction of the propagation losses in impurity disordered quantum well waveguides

John H. Marsh, C. C. Button, Russell M. Gwilliam, 1990 .

Polarization switching and induced birefringence in InGaAsP multiple quantum wells at 1.5 μm

C. Button, M. Mazilu, A. Miller, 2002 .

Picosecond all-optical polarization switching in InGaAsP MQW's at 1.52 μm

J. Hyland, C. Button, A. Miller, 1998, IEEE Photonics Technology Letters.

Space charge effects in carrier escape from single quantum well structures

C. C. Button, K.W.J. Barnham, K. Barnham, 1999 .

A universal damage induced technique for quantum well intermixing

John H. Marsh, C. C. Button, Craig James Hamilton, 1998 .

Voltage enhancement in quantum well solar cells

C. C. Button, Mark Hopkinson, J. P. Connolly, 1996 .

28 ps recovery time in an InGaAsP/InGaAsP multiple-quantum-well saturable absorber employing carrier sweepout

Alwyn J. Seeds, C. C. Button, E. P. Burr, 2001 .

Low avalanche noise characteristics in thin InP p/sup +/-i-n/sup +/ diodes with electron initiated multiplication

R. C. Tozer, K.F. Li, J. David, 1999, IEEE Photonics Technology Letters.

Local vibrational modes associated with semi-insulating InP : C, frequencies and line shapes

C. Button, R. Newman, B. R. Davidson, 1999 .

Growth of AlxGa1−xAs by MOVPE using a new alkylaluminium precursor

C. Button, J. Roberts, S. Rushworth, 1989 .

Electrical and optical characterisation of heavily doped GaAs:C bases of heterojunction bipolar transistors

J. David, C. Button, P. Houston, 1998 .

The Design and Application of III-V Multiquantum Well Optical Modulators

David Atkinson, Karl Woodbridge, P. J. Stevens, 1990 .

Optical spectroscopic observation of spontaneous long range ordering in AlGaInP

M. Hopkinson, J. David, G. Hill, 1996 .

Carbon δ-doping GaAs superlattices

C. Button, R. Newman, B. R. Davidson, 1996 .

Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors

J. David, C. Button, H. Yow, 1998 .

MOVPE growth of AlGaAs using trimethylamine alane

J. David, C. Button, J. Roberts, 1990 .

The incorporation of oxygen into InAlAs, the role of trimethylindium (TMI)

C. Button, J. Roberts, A. Chew, 1994 .

Electron mobility enhancement in heavily doped GaAs:C heterojunction bipolar transistors

C. Button, P. Houston, B. Lye, 1996 .

Raman spectroscopic study of the H-CAs complex in epitaxial AlAs

R. Pritchard, C. Button, J. Roberts, 1995 .

Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors

J. David, C. Button, P. Houston, 1998 .

Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage

J. David, C. Button, B. Lye, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors

J. David, C. Button, P. Houston, 1997, IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat..

Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs

Eric C. Larkins, J. Morgan, Peter J. Parbrook, 2002 .

Nanostructure of ordering variants in (AlxGa1−x)0.52In0.48P grown on different vicinal GaAs substrates

C. Button, D. Gerthsen, H. Kalt, 1998 .

Stimulated emission from localized states in partially ordered (AlxGa1−x)0.52In0.48P

C. Button, H. Kalt, D. J. Mowbray, 1998 .

650 nm lasers with narrow far-field divergence

P. Smowton, G. Berry, C. Button, 1998, Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130).

Actively mode-locked and passively Q-switched operation of thulium-doped fibre laser using multiquantum well asymmetric Fabry-Perot modulator

D. C. Hanna, John N. Carter, C. C. Button, 1992 .

High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering

John H. Marsh, C. C. Button, A. C. Bryce, 1994 .

The effect of cladding layer thickness on large optical cavity 650-nm lasers

Peter Blood, Peter Michael Smowton, John H. Marsh, 2002 .

Steady-state carrier escape from single quantum wells

C. C. Button, Jenny Nelson, K.W.J. Barnham, 1993 .

Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps

John H. Marsh, C. C. Button, J. Beauvais, 1992 .

Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm

G. Buller, C. Button, Jason M. Smith, 2002 .